1. Georgian Technical University Study of influence of pulse-photon irradiation on parameters of plasma anodized oxide films of Silicon Tamar Leshkashvili Email:Tamar.leshkashvili@gmail.com

2. Topicality of the subject One of the main elements of some modern nanoelectronic devices is an super-thin dielectric layer (5-50 nm). Standard technology of formation of dielectric layers is a high-temperature process at 1150°C. At these temperatures, a diffusion of undesirable impurities, an increase in porosity, deterioration of adhesion with a substrate and other processes take place in a dielectric. This is highly unacceptable for structures of nano- dimensions. Also, after ending up the process electrophysical properties of derived oxides normally improve with high temperature treatment which is not desirable due to above-mentioned shortcomings.

3. Fig.1. The schematic of plasma anodes 1.Anode 2.Cathode 3.Target contact 4.Sample 5.Plasma holder 6.Thermocouple output 7.Ultraviolet irradiation source 8.Sample heater 9.Cover

4. Goal Pulse-photon annealing allows lowering these temperatures (the pulse duration with a few seconds and the temperature less than 600°C). Therefore it is essential to study optimal regimes of the process and determining photon spectrum, intensity of irradiation, length of pulse, geometry and so on. which constitutes the main aim of the project. t imp = few seconds, T≤600 0 C

5. Study methods  Volt-Farad (C-V) and Volt-Amper (V-A) characteristics;  Charge and dielectric constant in the oxide;  Leaking currents and breakdown voltages in the oxide;  Oxide thickness and work function;

6. Tamar Leshkashvili