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ACTINIC MASK IMAGING: TAKING A SHARP LOOK AT NEXT GENERATION PHOTOMASKS Semiconductor High-NA actinic Reticle Review Project Markus Benk, Antoine Wojdyla,

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Presentation on theme: "ACTINIC MASK IMAGING: TAKING A SHARP LOOK AT NEXT GENERATION PHOTOMASKS Semiconductor High-NA actinic Reticle Review Project Markus Benk, Antoine Wojdyla,"— Presentation transcript:

1 ACTINIC MASK IMAGING: TAKING A SHARP LOOK AT NEXT GENERATION PHOTOMASKS Semiconductor High-NA actinic Reticle Review Project Markus Benk, Antoine Wojdyla, Ken Goldberg, Patrick Naulleau 2015 International Symposium on Extreme Ultraviolet Lithography, Maastricht, the Netherlands, October 6

2 2 Overview Source:Synchrotron Optics:Zoneplate lenses 4×NA:0.25–0.625 Sigma:Programmable Navigation:Full-mask XY Throughput:~8 series/hour 2015 EUVL Symposium, Maastricht

3 3 Introduction Mangat, PMJ 2015 500 nm Mask SEMWafer SEM SHARP aerial image 2015 EUVL Symposium, Maastricht

4 4  Results Bright field image Zernike Phase Contrast Complementary imaging modes 1 µm Introduction 2015 EUVL Symposium, Maastricht

5 5 Through-focus, Δ z= 400 nm Complex amplitude 200 nm Mochi, SPIE 79691X (2011) Phase reconstruction, modified Gerchberg-Saxton Algorithm Through-focus, Δ z= 400 nm Complex amplitude Introduction 2015 EUVL Symposium, Maastricht

6 6 Fourier Ptychography Microscopy synthesized NA Pupil planeComplex amplitude 1µm Introduction 2015 EUVL Symposium, Maastricht

7 7 Source angular spectrum Aperture Introduction 2015 EUVL Symposium, Maastricht

8 7 Fourier Synthesis Illuminator Zoneplate lens Introduction 2015 EUVL Symposium, Maastricht

9 Illuminator angular range  0.625 4xNA 10° CRA  =0.8 8 Fourier Synthesis Illuminator   outline 2015 EUVL Symposium, Maastricht

10 ASML Flex Pupil 9 Liu, SPIE 90480Q (2014) Meiling, SPIE 83221G (2012) Freeform source 7 standard fills Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht

11 Pupil fill 10  Conventional  0.33 4xNA, 6° CRA Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht Pupil diagram YAG image, 4mm below focus

12 Pupil fill  Crosspole  0.33 4xNA, 6° CRA 10 Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht Pupil diagram YAG image, 4mm below focus

13 Pupil fill  Crosspole  0.33 4xNA, 6° CRA 10 Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht Pupil diagram Modulation of flux in pupil channels

14 Pupil fill  Quasar  0.33 4xNA, 6° CRA 10 Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht Pupil diagram Modulation of flux in pupil channels

15 Pupil fill  Freeform Source  0.33 4xNA, 6° CRA 10 Fourier Synthesis Illuminator 2015 EUVL Symposium, Maastricht Pupil diagram Freeform-source example

16 Zoneplates 5 SHARP 2013 EUVL Symposium, Toyama, Japan  Gold pattern on Si-membranes  Magnetic mounting  Kinematic positioning 5 mm  Gold pattern on Si-membranes  Magnetic mounting  Kinematic positioning 2 mm

17 Zoneplates 12 Chip A Standard Zoneplates:  0.25 to 0.625 4xNA  6° to 10° CRA  5 azimuthal angles SHARP Chip B  Zernike Phase Contrast  Differential Interference Contrast  Stereoscopic imaging  Cubic Phase Modulation 160 µm 2015 EUVL Symposium, Maastricht

18 Zoneplates Chip A Standard Zoneplates:  0.25 to 0.625 4xNA  6° to 10° CRA  5 azimuthal angles Chip B  Zernike Phase Contrast  Differential Interference Contrast  Stereoscopic imaging  Cubic Phase Modulation Chip C  Elliptical zoneplates 160 µm 12 SHARP 2015 EUVL Symposium, Maastricht

19 Ken’s data 13 SHARP 2015 EUVL Symposium, Maastricht Goldberg, SPIE 94221A (2015)

20 14 Photoresist Inpria YA-Series Resist  Negative-tone  50-nm absorption length  30-nm thick resist on Si-wafer coated with a standard Mo/Si-multilayer  30% EUV-transmission on double pass Resolution Test Target MET3 Berkeley Microfield Exposure Tool  0.3 NA 2015 EUVL Symposium, Maastricht

21 15 SEM image  22-nm hp lines Resolution Test Target 2015 EUVL Symposium, Maastricht

22 16 Resolution Limits dipole 0.156 NA (0.625 NA scanner) 0.125 NA (0.5 NA scanner) Rayleigh coherent zoneplate 66 33 108 54 54pitch 27hp 53 26 87 44 44pitch 22hp Resolution Test Target Illuminationcoherentincoherent extreme dipole Resolution limit (full cycle) 0.5 4xNA 108 nm 54 nm 66 nm 33 nm 54 nm (pitch) 27 nm (hp) 0.625 4xNA 87 nm 44 nm 53 nm 26 nm 44 nm (pitch) 22 nm (hp) 2015 EUVL Symposium, Maastricht

23 17 Results 0.5 4xNA Coherent illumination 100-nm hp lines 2 µm 2015 EUVL Symposium, Maastricht

24 17 Results 0.5 4xNA Coherent illumination 100-nm hp lines 2 µm 2015 EUVL Symposium, Maastricht Vertical Lines

25 Results 0.5 4xNA Coherent illumination  r C =54 nm hp 100-nm hp v lines 83% modulation 300 nm CD 18 2015 EUVL Symposium, Maastricht

26 0.5 4xNA Coherent illumination  r C =54 nm hp  60-nm hp v lines 68% modulation Results 300 nm CD 18 2015 EUVL Symposium, Maastricht

27 0.5 4xNA Coherent illumination  r C =54 nm hp  50-nm hp v lines No modulation Results 300 nm CD 18 2015 EUVL Symposium, Maastricht

28 0.5 4xNA Incoherent illumination  r R =33 nm hp  50-nm hp v lines 20% modulation Results 300 nm CD 18 2015 EUVL Symposium, Maastricht

29 0.5 4xNA Incoherent illumination  r R =33 nm hp  36-nm hp v lines 5% modulation Results 300 nm CD 18 2015 EUVL Symposium, Maastricht

30 0.5 4xNA Incoherent illumination  r R =33 nm hp  34-nm hp v lines 4% modulation Results 300 nm CD 18 2015 EUVL Symposium, Maastricht

31 0.5 4xNA Extreme dipole  r D =27 nm hp  34-nm hp v lines 27% modulation Results 300 nm CD 18 2015 EUVL Symposium, Maastricht

32 0.5 4xNA Extreme dipole  r D =27 nm hp  28-nm hp v lines 14% modulation Results 300 nm CD 18 2015 EUVL Symposium, Maastricht

33 0.625 4xNA Coherent illumination  r C =44 nm hp  100-nm hp v lines 83% modulation Results 200 nm CD 19 2015 EUVL Symposium, Maastricht

34 0.625 4xNA Coherent illumination  r C =44 nm hp  50-nm hp v lines 56% modulation Results 200 nm CD 19 2015 EUVL Symposium, Maastricht

35 0.625 4xNA Coherent illumination  r C =44 nm hp  40-nm hp v lines No modulation Results 200 nm CD 19 2015 EUVL Symposium, Maastricht

36 0.625 4xNA Incoherent illumination  r R =26 nm hp  40-nm hp v lines 18% modulation Results 200 nm CD 19 2015 EUVL Symposium, Maastricht

37 0.625 4xNA Incoherent illumination  r R =26 nm hp  28-nm hp v lines 3% modulation Results 200 nm CD 19 2015 EUVL Symposium, Maastricht

38 0.625 4xNA Incoherent illumination  r R =26 nm hp  26-nm hp v lines 2% modulation Results 200 nm CD 19 2015 EUVL Symposium, Maastricht

39 0.625 4xNA Extreme dipole  r L =22 nm hp  26-nm hp v lines 33% modulation Results 200 nm CD 19 2015 EUVL Symposium, Maastricht

40 0.625 4xNA Extreme dipole  r L =22 nm hp  24-nm hp v lines 25% modulation Results 200 nm CD 19 2015 EUVL Symposium, Maastricht

41 0.625 4xNA Extreme dipole  r L =22 nm hp  22-nm hp v lines 10% modulation Results 200 nm CD 19 2015 EUVL Symposium, Maastricht

42 Source angular spectrum Aperture 20 2015 EUVL Symposium, Maastricht Emulation of anamorphic imaging

43 20 2015 EUVL Symposium, Maastricht Emulation of anamorphic imaging

44 Elliptical zoneplates  4x/8xNA = 0.55  6º CRA  Magnification from 1250 to 1636 SEM image 21 2015 EUVL Symposium, Maastricht Zoneplate lenses

45 22 Imaging results Emulation of anamorphic imaging 2015 EUVL Symposium, Maastricht

46 Emulation of anamorphic imaging 22 Imaging results 2015 EUVL Symposium, Maastricht

47 Emulation of anamorphic imaging 22 Imaging results 2015 EUVL Symposium, Maastricht

48 Emulation of anamorphic imaging 22 Imaging results 2015 EUVL Symposium, Maastricht

49 Emulation of anamorphic imaging 22 Imaging results 2015 EUVL Symposium, Maastricht

50 Emulation of anamorphic imaging 22 Imaging results 2015 EUVL Symposium, Maastricht

51 2x1 binning 23 Imaging results 2015 EUVL Symposium, Maastricht

52 2x1 binning 23 Imaging results 2015 EUVL Symposium, Maastricht

53 24 Cross sections  60-nm vertical lines  120-nm horizontal lines, 2x1 binning Imaging results 2015 EUVL Symposium, Maastricht

54 Summary Semiconductor High-NA Actinic Reticle Review Project  Emulation of imaging in EUV scanner  Complementary imaging modes  Phase extraction  Fourier Synthesis Illuminator produces arbitrary sources  Emulation of anamorphic imaging  22-nm half-pitch resolution Portions of this work were funded by SEMATECH and Intel through the U.S. Department of Energy under Contract No. DE-AC02-05CH11231. 2015 EUVL Symposium, Maastricht

55 sharp.lbl.gov 2015 EUVL Symposium, Maastricht Thanks to our users. Thanks to INTEL.

56 sharp.lbl.gov Thank you! 2015 EUVL Symposium, Maastricht Thanks to our users. Thanks to INTEL.


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