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7 th ACFA, H.J.Kim Intermediate Tracker H. J. Kim, KNU H. J. Kim, KNU 2004/11/09 7 th ACFA workshop 1.Introduction 2.Intermediate trackers/FTD for LC 3.Simulation.

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Presentation on theme: "7 th ACFA, H.J.Kim Intermediate Tracker H. J. Kim, KNU H. J. Kim, KNU 2004/11/09 7 th ACFA workshop 1.Introduction 2.Intermediate trackers/FTD for LC 3.Simulation."— Presentation transcript:

1 7 th ACFA, H.J.Kim Intermediate Tracker H. J. Kim, KNU H. J. Kim, KNU 2004/11/09 7 th ACFA workshop 1.Introduction 2.Intermediate trackers/FTD for LC 3.Simulation study 4.Outside Si-tracker option 5.Silicon strip R&D for the intermediate tracker 6.Summary

2 7 th ACFA, H.J.Kim Why VTX and tracking important? ▣ Why VTX and tracking important? recoil mass reconstruction - importance of tracking resolution q qbar ( b bbar -> Vertex! )

3 7 th ACFA, H.J.Kim General view of Three detector option GLD(Huge)

4 7 th ACFA, H.J.Kim *To improve 1) the linking efficiency of a main track to the corresponding VTX hits, 2) the reconstruction efficiency of low-momentum tracks and of particles which decay between the VTX and the Main tracking system 3) the momentum resolution of tracks. * If the beam background is very severe, you can tu rn off the HV of inner layers of TPC without serious performance loss *Trigger and/or Time stamping capability *Standalone tracking Purpose of Intermediate Tracker

5 7 th ACFA, H.J.Kim

6 Silicon Tracking for SiD (Jaros’s talk) Why silicon microstrips? SiD starting point Robust against beam halo showers Thin, even for forward tracks. Won’t degrade ECAL Stable alignment and calibration. No wandering T to D. Excellent momentum resolution (  p/p 2 ~2 x 10 -5 ) Excellent momentum resolution (  p/p 2 ~2 x 10 -5 )

7 7 th ACFA, H.J.Kim TESLA tracking system from TESLA TDR cos(  )=.995 Magnetic field: 4 Tesla

8 7 th ACFA, H.J.Kim From Behnke ’ s talk

9 7 th ACFA, H.J.Kim From Behnke ’ s talk

10 7 th ACFA, H.J.Kim Typical “ Large/Huge ” models under consideration SiVTX pixel(cold version)  HCAL (Pb(Fe)/scinti or digital) W/Scinti ECAL TPC (Jet chamber as option) Si intermedi.-Trk SC-coil SiVTX pixel  Pb/scinti HCAL Pb/Scinti ECAL Jet chamber Si intermedi.-Trk SC-coil “GLC” design (ACFA) “Large/Huge”

11 7 th ACFA, H.J.Kim stand-alone tracking capability ▣ Intermediate Tracker Configuration 5 layers at r = 9 to 37 cm angular coverage |cosΘ|<0.9 spatial resolution σ = 10 μm thickness of a layer: 0.6% Xo Huge detector concept: TPC: Rmin = 40 cm Do not expect much changes in IT

12 7 th ACFA, H.J.Kim Intermediate Tracker Design for GLC - Double-sided silicon microstrip detectors i. excellent spatial resolution ii. well-established technology Layout of the IT surrounding the VTX. - The distance between the last layer of VTX and the first layer of Trackeris about 39cm in Large detector design. i. 5 layers of coaxial cylinders at 9, 16, 23, 30 and 37cm ii. covers | |<0.90 coinciding with the region covered by VTX

13 7 th ACFA, H.J.Kim = 10, 20, 30, 40 w/ std. design parameters Momentum Resolution ( )

14 7 th ACFA, H.J.Kim Linking Efficiency Linking efficiency is able to be measured by “Residual” which is defined as a precision from the difference of distance between the position of extrapolate track of main tracking & the hit position on IT or VTX layers CDC IT5 Figure. The definition of Residuals.

15 7 th ACFA, H.J.Kim Residuals for a single pion Residuals vs. generation energy for a single pion For a single pion, a linking efficiency with IT+VTX is improved by ~20 % compared to that with VTX only.

16 7 th ACFA, H.J.Kim Why Si Tracker ? (Sugimoto ’ s talk) 5x10 -5 does not satisfy the design criteria if the bea m energy spread is 0.1%5x10 -5 does not satisfy the design criteria if the bea m energy spread is 0.1% The performance goal should be 2x10 -5The performance goal should be 2x10 -5 How?How?  Outside Si Tracker for a Huge Detector ???  Outside Si Tracker for a Huge Detector ???

17 7 th ACFA, H.J.Kim The Detector Model Si Vertex DetectorSi Vertex Detector –5 layers, t=70  m,  =3  m –cos  < 1 (non-realistic) Si Inner TrackerSi Inner Tracker –3 layers (12, 24, 36 cm), t=300  m,  =7  m –cos  <1 (non-realistic) TPCTPC –40cm < R < 200cm, Z<235cm –Ar gas, 220 samples,  =150  m Si Outer TrackerSi Outer Tracker –R=205cm(barrel)/Z=250cm(EC),  =7  m Momentum resolution is calculated following Gluckstern ’ s methodMomentum resolution is calculated following Gluckstern ’ s method –No sophisticated method such as Kalman filter is used

18 7 th ACFA, H.J.Kim Performance Pt (GeV/c)  Pt/Pt 2

19 7 th ACFA, H.J.Kim Performance cos   P/P 2 (M.S. not included) FTD?

20 7 th ACFA, H.J.Kim Silicon sensor R&D <- Details by B.G.Cheon ▣ Silicon sensor R&D <- Details by B.G.Cheon Metal 1 and metal 2 contact (VIA) n+ ohmic side p+ junction side 1 st metal 2 nd metal readout line double sided silicon strip tree metal process - implant strips in ohmic side are orthogonal to those in junction side -readout strips in junction side have the same direction as that of ohmic side Front Side: - brown: implanted n+ - blue: p-stop - sky blue: SiO2 - gray: Al for readout Back Side: - blue: implanted p+ - first gray: 1 st metal - sky blue: SiO2 - vertical gray: VIA - second gray: 2 nd metal

21 7 th ACFA, H.J.Kim 512ch 100um pitch sensor Without hour glass 512ch 100um pitch sensor With hour glass 1cm PIN Diode For SDD R&D PIN Diode array 16ch 100um pitch sensor 16ch 100um pitch SSD 32ch 100um pitch sensor 64ch 100um pitch sensor MASK Design : P Side ▣ MASK Design : P Side

22 7 th ACFA, H.J.Kim ▣ Silicon Sensor n+ implanted p-stop in atoll via in hourglassreadout pad in staggering guard ring p+ implantedreadout strip N sideP side

23 7 th ACFA, H.J.Kim ▣ Measurements

24 7 th ACFA, H.J.Kim These are disappeared after insulating wafer edges ▣ Measurements of the sensor

25 7 th ACFA, H.J.Kim ▣ Sensor Readout FADC Control Signal DSSD RC chip VA-TA FPGA USB2 DAQ

26 7 th ACFA, H.J.Kim USB2 with 25Mhz 12bit FADC for Readout R&D FX2 FADC CPLD Flash RAM SRAM 31 FPGA I/O for R&D trigger input

27 7 th ACFA, H.J.Kim Radiation hardness beamtest with proton Radiation damage problem -> Signal reduction -> Noise increase -> Depletion voltage increase -> Sensor damage Radiation damage Measurement -> 30-50MeV Cyclotron proton, neutron beam irradiation (Korean cancer center hospital, Seoul, Korea) -> Leakage current measurement -> Capacitance measurement -> Signal measurement Processing improvement -> Radiation damage characteristics study -> Radiation hardness improvement

28 7 th ACFA, H.J.Kim Intermediate Tracker R&D Activities in Korea √ linking and reconstruction efficiency (Fast Simulation) √ track momentum resolution (Full Simulation) √ DSSD simulation/design/fabrication Electronics(RC chip, VA1TA, FADC), DAQ √ S/N ratio measurement and beam test - Kyungpook National University - Korea University - Seoul National University - Chunnam National University - Sungkyunkwan University Sensor design Process chart KNU / SNU Simulation (process and device) KNU/SKKU DAQ/Electronics/Test KNU/KU/CNU Sensor

29 7 th ACFA, H.J.Kim Summary Intermediate Tracker is necessary to improve momentum resolution and track linking efficiencyIntermediate Tracker is necessary to improve momentum resolution and track linking efficiency TPC+Si Tracker System in GLD including SOT will satisfy the original design criteria even for  Eb=0.1% in wide ang ular range (|cos  |<0.9).TPC+Si Tracker System in GLD including SOT will satisfy the original design criteria even for  Eb=0.1% in wide ang ular range (|cos  |<0.9). Double (single) side silicon strip sensor R&D is ongoing in KoreaDouble (single) side silicon strip sensor R&D is ongoing in Korea

30 7 th ACFA, H.J.Kim Study issue Intermediate tracker geometry optimizationIntermediate tracker geometry optimization FTD geometry optimizationFTD geometry optimization Double side vs Single side strip senorDouble side vs Single side strip senor Intermediate tracker trigger?Intermediate tracker trigger? Time stamping (Separation of bunches)Time stamping (Separation of bunches) Radiation hardnessRadiation hardness Mechanical structureMechanical structure

31 7 th ACFA, H.J.Kim Backup slide

32 7 th ACFA, H.J.Kim ▣ Cleaning Room

33 7 th ACFA, H.J.Kim 512ch 50um pitch sensor 1cm PIN Diode For SDD R&D 64ch 50um pitch sensor 32ch 50um pitch sensor 16ch 50um pitch sensor Backside of SSD PIN Diode array MASK Design : N Side ▣ MASK Design : N Side

34 7 th ACFA, H.J.Kim Radiation damage by n, p and e

35 7 th ACFA, H.J.Kim Require good σ rΦ and σ z Reasonable (moderate) cost Type σrΦσrΦσrΦσrΦ σzσzσzσz MSGC+GEM 30μ 30μm Fast Signal SSD 10 μm 20 μm Straw Chamber 50 μm 1mm Fiber Tracker 50 μm 1mm Fast Signal Inner DC 80 μm 1mm ▣ Intermediate Tracker Option

36 7 th ACFA, H.J.Kim  Pt/Pt 2 : Measurement Term SiDGLD (  Si =7  m) GLD (  Si =10  m) TESLA TESLA (  Si =7  m) TPC 1.2x10 -4 1.5x10 -4 VTX+TPC 4.6x10 -5 5.2x10 -5 VTX+SIT+TPC 2.9x10 -5 3.4x10 -5 4.1x10 -5 3.5x10 -5 VTX+SIT+TPC+SOT 1.9x10 -5 2.3x10 -5 2.6x10 -5 2.2x10 -5 VTX+SIT+SOT 2.1x10 -5 2.4x10 -5 3.2x10 -5 3.7x10 -5 2.8x10 -5  VTX =3  m in all cases


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