1. 3D Transistor Research Report G.V. Kobyzgroup 8V83 E.O. Proskurinalanguage instructor

2. Contents Introduction Main Aspects of Research Methods of Research Results Conclusion 2

3. Introduction The area of the research deals with production of digital devices: 3

4. The aims of the study To investigate the problem of reducing the size of transistors To study the problem of reducing their energy consumption To examine the problem of electric breakdown of the transistor 4

5. Main Aspects of Research Advantages and disadvantages of technology Calculation of performance of new transistors Measurement of power consumption Efficiency Areas of IT technology where it can be applied 5

6. Methods of Research Review scientific reports Review scientific articles Empirical part in the form of the interview 6

7. Results and Discussion 22nm 3D Transistor provide improved perfomance at high voltage and an unprecedented perfomance gain at low voltage 7

8. Results and Discussion 8

9. Conclusion Tri-gate transistors could improve performance and energy efficiency Tri-gate transistors could become the basic building block for microprocessors in future technology nodes 9

10. Thank you for attention 10