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EE 445 INDUSTRIAL ELECTRONICS COURSE PRESENTATION Ahmed Hamidaddin - 221836.

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Presentation on theme: "EE 445 INDUSTRIAL ELECTRONICS COURSE PRESENTATION Ahmed Hamidaddin - 221836."— Presentation transcript:

1 EE 445 INDUSTRIAL ELECTRONICS COURSE PRESENTATION Ahmed Hamidaddin - 221836

2 Introduction  A top down view of computer usage components: Program/App.Your Choice! High Level LanguageICS 103 Assembly LanguageEE 390 MicroprocessorEE 390 Digital Logic BlocksEE 200 Transistors (MOSFETs & BJTs)EE 203 Manufactured practically using 2

3 VLSI?  ICs are the basic block of electronic device design.  They contain many transistors on one chip.  Digital devices rely on digital logic.  First half of 20 th century ruled by vacuum tubes.  The magical PN junction - 1939  Transistor – 1947, BJT – 1949, TTL – 1962,  PMOS – 60’s, NMOS – 70’s,  CMOS – 80’s surviving until nowadays. 3

4 Evolution GenerationYearLogic Blocks One gate19601 Multi-function19622~20 Medium Scale Integration (MSI)196720~200 Large Scale Integration (LSI)1972200~2000 Very Large Scale Integration (VLSI)19782000~20000 Ultra Large Scale Integration (ULSI)198920000~  A logic block contains 2+ transistors.  You build your microprocessor using these blocks! 4

5 Moore’s Law 1,000,000 100,000 10,000 1,000 10 100 1 19751980198519901995200020052010 8086 80286 i386 i486 Pentium ® Pentium ® Pro K 1 Billion Transistors !!! Source: Intel Projected Pentium ® II Pentium ® III 5

6 The PN Junction: The Secret Recipe! 6

7 MOSFET Retrospect 7

8 CMOS Inverter AY 0 1 8

9 CMOS Inverter: Low Input AY 01 10 I 9

10 AY 01 10 10

11 CMOS Inverter: High Input AY 0 10 I 1 11

12 CMOS Inverter: High Input AY 0 10 1 12

13 CMOS NAND Gate ABY 001 01 10 11 13

14 CMOS NAND Gate ABY 001 011 10 11 14

15 CMOS NAND Gate ABY 001 011 101 11 15

16 CMOS NAND Gate ABY 001 011 101 110 16

17 Advantages of CMOS  Very low power consumption.  Rail-to-rail voltage.  Modular design.  Reliable and robust. Choice of the industry! Intel 4004 Intel Pentium 4 17

18 One Main Challenge in CMOS  Increasing temperature increases gate leakage current, or the current escaping through the gate oxide. 18

19 Design Hierarchy n+ S G D + DEVICE CIRCUIT GATE MODULE SYSTEM 19

20 Design Flowchart System Requirements Logic Design VLSI Design and Layout Design Verification Fabrication/Synthesis fail pass 20

21 Conclusion  VLSI is a mature field of electrical and computer engineering that deals with semi-conductor properties to design patterns that form the building blocks to serve digital circuit design purposes.  BiCMOS, ECL, TTL technologies currently used. Each has its own applications for its advantages.  Serious VLSI research, design and cutting-edge manufacturing takes place in extremely sophisticated factories and labs (fabs). 21

22 Thank YOU!  I hope you enjoyed the presentation.  I welcome any question.  For more information visit: http://lsiwww.epfl.ch/LSI2001/teaching/webcourse/toc.html http://www.microelectronic.e-technik.tu- darmstadt.de/lectures/winter/vlsi/vlsi_vorlesung_ef.html http://bwrc.eecs.berkeley.edu/IcBook/ 22


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