1. CSE477 L01 Introduction.1Irwin&Vijay, PSU, 2002 CSE477 VLSI Digital Circuits Fall 2002 Lecture 01: Introduction Mary Jane Irwin ( www.cse.psu.edu/~mji ) www.cse.psu.edu/~cg477www.cse.psu.edu/~mji www.cse.psu.edu/~cg477 [Adapted from Rabaey’s Digital Integrated Circuits, ©2002, J. Rabaey et al.]

2. CSE477 L01 Introduction.2Irwin&Vijay, PSU, 2002 Course Contents  Introduction to digital integrated circuits l CMOS devices and manufacturing technology. CMOS logic gates and their layout. Propagation delay, noise margins, and power dissipation. Combinational (e.g., arithmetic) and sequential circuit design. Memory design.  Course goals l Ability to design and implement CMOS digital circuits and optimize them with respect to different constraints: size (cost), speed, power dissipation, and reliability  Course prerequisites l EE 310. Electronic Circuit Design l CSE 471. Logic Design of Digital Systems

3. CSE477 L01 Introduction.3Irwin&Vijay, PSU, 2002 Course Administration  Instructor:Mary Jane Irwin mji@cse.psu.edu www.cse.psu.edu/~mji 227 Pond Lab Office Hrs: M 13:30-14:45 & R 9:30-10:45 mji@cse.psu.edu www.cse.psu.edu/~mji  TA:Vijay Degalahal degalaha@cse.psu.edu 225 Pond Lab Office Hrs: W & R 17:30 to 19:30 in 101 Pond degalaha@cse.psu.edu  Labs: Accounts on 101 Pond Lab machines  URL: www.cse.psu.edu/~cg477  Text: Digital Integrated Circuits, 2 nd Edition Rabaey et. al., ©2002(prerelease of the first nine chapters at the Penn State Bookstore) Lecture slides (pdf) – on the web

4. CSE477 L01 Introduction.4Irwin&Vijay, PSU, 2002 Grading Information  Grade determinates l Midterm Exam~25% -Wednesday, October 16 th, 20:15 to 22:15, 260 Willard l Final Exam~25% -Monday, December 16 th, 10:10 to noon, Location TBD l Homeworks/Lab Assignments (5)~20% -Due at the beginning of class (or, if submitted electronically, by 17:00 on the due date). No late assignments will be accepted. l Design Project (teams of ~2)~25% l In-class pop quizzes~ 5%  Please let me know about exam conflicts ASAP  Grades will be posted on the course homepage l Must submit email request for change of grade after discussions with the TA (Homeworks/Lab Assignments) or instructor (Exams) l December 10 th deadline for filing grade corrections; no requests for grade changes will be accepted after this date

5. CSE477 L01 Introduction.5Irwin&Vijay, PSU, 2002 Background from CSE471 and EE310  Basic circuit theory l resistance, capacitance, inductance l MOS gate characteristics  Hardware description language l VHDL or verilog  Use of modern EDA tools l simulation, synthesis, validation (Synopsys) l schematic capture tools (LogicWorks)  Logic design l logical minimization, FSMs, component design

6. CSE477 L01 Introduction.6Irwin&Vijay, PSU, 2002 Course Structure  Design and tool intensive class l Micromagic (MMI) “max” and “sue” for layout -Online documentation and tutorials l HSPICE for circuit simulation  Lectures: l 2 weeks on the CMOS inverter l 3 weeks on static and dynamic CMOS gates l 2 weeks on C, R, and L effects l 2 week on sequential CMOS circuits l 2 weeks on design of datapath structures l 2 weeks on memory design l 1 week on design for test, margining, scaling, trends l 1 week exams

7. CSE477 L01 Introduction.7Irwin&Vijay, PSU, 2002 “Executives might make the final decisions about what would be produced, but engineers would provide most of the ideas for new products. After all, engineers were the people who really knew the state of the art and who were therefore best equipped to prophesy changes in it.” The Soul of a New Machine, Kidder, pg 35

8. CSE477 L01 Introduction.8Irwin&Vijay, PSU, 2002 Transistor Revolution  Transistor –Bardeen (Bell Labs) in 1947  Bipolar transistor – Schockley in 1949  First bipolar digital logic gate – Harris in 1956  First monolithic IC – Jack Kilby in 1959  First commercial IC logic gates – Fairchild 1960  TTL – 1962 into the 1990’s  ECL – 1974 into the 1980’s

9. CSE477 L01 Introduction.9Irwin&Vijay, PSU, 2002 MOSFET Technology  MOSFET transistor - Lilienfeld (Canada) in 1925 and Heil (England) in 1935  CMOS – 1960’s, but plagued with manufacturing problems  PMOS in 1960’s (calculators)  NMOS in 1970’s (4004, 8080) – for speed  CMOS in 1980’s – preferred MOSFET technology because of power benefits  BiCMOS, Gallium-Arsenide, Silicon-Germanium  SOI, Copper-Low K, …

10. CSE477 L01 Introduction.10Irwin&Vijay, PSU, 2002 Moore’s Law  In 1965, Gordon Moore predicted that the number of transistors that can be integrated on a die would double every 18 to 14 months (i.e., grow exponentially with time).  Amazingly visionary – million transistor/chip barrier was crossed in the 1980’s. l 2300 transistors, 1 MHz clock (Intel 4004) - 1971 l 16 Million transistors (Ultra Sparc III) l 42 Million, 2 GHz clock (Intel P4) - 2001 l 140 Million transistor (HP PA-8500)

11. CSE477 L01 Introduction.11Irwin&Vijay, PSU, 2002 Intel 4004 Microprocessor

12. CSE477 L01 Introduction.12Irwin&Vijay, PSU, 2002 Intel Pentium (IV) Microprocessor

13. CSE477 L01 Introduction.13Irwin&Vijay, PSU, 2002 State-of-the Art: Lead Microprocessors

14. CSE477 L01 Introduction.14Irwin&Vijay, PSU, 2002 Moore’s Law in Microprocessors 4004 8008 8080 8085 8086 286 386 486 Pentium® proc P6 0.001 0.01 0.1 1 10 100 1000 19701980199020002010 Year Transistors (MT) 2X growth in 1.96 years! Transistors on lead microprocessors double every 2 years Courtesy, Intel

15. CSE477 L01 Introduction.15Irwin&Vijay, PSU, 2002 Evolution in DRAM Chip Capacity 1.6-2.4  m 1.0-1.2  m 0.7-0.8  m 0.5-0.6  m 0.35-0.4  m 0.18-0.25  m 0.13  m 0.1  m 0.07  m human memory human DNA encyclopedia 2 hrs CD audio 30 sec HDTV book page 4X growth every 3 years!

16. CSE477 L01 Introduction.16Irwin&Vijay, PSU, 2002 Die Size Growth 4004 8008 8080 8085 8086 286 386 486 Pentium ® proc P6 1 10 100 19701980199020002010 Year Die size (mm) ~7% growth per year ~2X growth in 10 years Die size grows by 14% to satisfy Moore’s Law Courtesy, Intel

17. CSE477 L01 Introduction.17Irwin&Vijay, PSU, 2002 Clock Frequency Lead microprocessors frequency doubles every 2 years P6 Pentium ® proc 486 386 286 8086 8085 8080 8008 4004 0.1 1 10 100 1000 10000 19701980199020002010 Year Frequency (Mhz) 2X every 2 years Courtesy, Intel

18. CSE477 L01 Introduction.18Irwin&Vijay, PSU, 2002 Power Dissipation P6 Pentium ® proc 486 386 286 8086 8085 8080 8008 4004 0.1 1 10 100 197119741978198519922000 Year Power (Watts) Lead Microprocessors power continues to increase Courtesy, Intel Power delivery and dissipation will be prohibitive

19. CSE477 L01 Introduction.19Irwin&Vijay, PSU, 2002 Power Density 4004 8008 8080 8085 8086 286 386 486 Pentium® proc P6 1 10 100 1000 10000 19701980199020002010 Year Power Density (W/cm2) Hot Plate Nuclear Reactor Rocket Nozzle Power density too high to keep junctions at low temp Courtesy, Intel

20. CSE477 L01 Introduction.20Irwin&Vijay, PSU, 2002 Design Productivity Trends 2003 19811983 19851987 1989 199119931995199719992001 2005 2007 2009 Logic Tr./Chip Tr./Staff Month. x x x x x x x 21%/Yr. compound Productivity growth rate x 58%/Yr. compounded Complexity growth rate 10,000 1,000 100 10 1 0.1 0.01 0.001 Logic Transistor per Chip (M) 0.01 0.1 1 10 100 1,000 10,000 100,000 Productivity (K) Trans./Staff - Mo. Complexity Courtesy, ITRS Roadmap Complexity outpaces design productivity

21. CSE477 L01 Introduction.21Irwin&Vijay, PSU, 2002 Technology Directions: SIA Roadmap Year199920022005200820112014 Feature size (nm)180130100705035 Mtrans/cm 2 714-2647115284701 Chip size (mm 2 )170170-214235269308354 Signal pins/chip7681024 128014081472 Clock rate (MHz)6008001100140018002200 Wiring levels6-77-88-999-1010 Power supply (V)1.81.51.20.90.6 High-perf power (W)90130160170174183 Battery power (W)1.42.02.42.02.22.4 For Cost-Performance MPU (L1 on-chip SRAM cache; 32KB/1999 doubling every two years) http://www.itrs.net/ntrs/publntrs.nsf

22. CSE477 L01 Introduction.22Irwin&Vijay, PSU, 2002 Why Scaling?  Technology shrinks by ~0.7 per generation  With every generation can integrate 2x more functions on a chip; chip cost does not increase significantly  Cost of a function decreases by 2x  But … l How to design chips with more and more functions? l Design engineering population does not double every two years…  Hence, a need for more efficient design methods l Exploit different levels of abstraction

23. CSE477 L01 Introduction.23Irwin&Vijay, PSU, 2002 Design Abstraction Levels SYSTEM GATE CIRCUIT V out V in CIRCUIT V out V in MODULE + DEVICE n+ SD G

24. CSE477 L01 Introduction.24Irwin&Vijay, PSU, 2002 Major Design Challenges  Microscopic issues l ultra-high speeds l power dissipation and supply rail drop l growing importance of interconnect l noise, crosstalk l reliability, manufacturability l clock distribution  Macroscopic issues l time-to-market l design complexity (millions of gates) l high levels of abstractions l reuse and IP, portability l systems on a chip (SoC) l tool interoperability YearTech.ComplexityFrequency3 Yr. Design Staff Size Staff Costs 19970.3513 M Tr.400 MHz210$90 M 19980.2520 M Tr.500 MHz270$120 M 19990.1832 M Tr.600 MHz360$160 M 20020.13130 M Tr.800 MHz800$360 M

25. CSE477 L01 Introduction.25Irwin&Vijay, PSU, 2002 Next Lecture and Reminders  Next lecture l Design metrics -Reading assignment – 1.3  Reminders l Hands on max tutorial -Thursday evening from 7:00 to 9:00 pm in 101 Pond Lab l HW1 due September 10 th l Evening midterm exam scheduled -Wednesday, October 16 th, 20:15 to 22:15, 260 Willard -Please let me know ASAP (via email) if you have a conflict