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Report on TIPP 2011 3D-IC Satellite Meeting Carl Grace June 21, 2011.

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Presentation on theme: "Report on TIPP 2011 3D-IC Satellite Meeting Carl Grace June 21, 2011."— Presentation transcript:

1 Report on TIPP 2011 3D-IC Satellite Meeting Carl Grace June 21, 2011

2 TIPP 2011 | 3D-IC Integration Key takeaways 3D-IC potentially a very valuable technology for detector improvement and we should continue to pursue it 3D-IC is conceptually simple, but in practice it is really, really hard Experiences thus far have been quite painful Until a foundry takes over, get ready for endless waits for parts and a tiresome blame game

3 TIPP 2011 | 3D-IC Integration 2D versus 3D Circuits 3D Integrated Circuit Cross-Section 2D Integrated Circuit Cross-Section Handle Silicon Single Circuit Layer Circuit Layers Tier 1 Tier 2Tier 3 Handle Silicon 3D Vias Silicon Buried Oxide Deposited Oxide Metal

4 TIPP 2011 | 3D-IC Integration Tier2-to-Tier1 Alignment and Bonding Handle Silicon Buried Oxide Tier-1 Handle Silicon Buried Oxide Tier-2 Silicon Buried Oxide Deposited Oxide Metal

5 TIPP 2011 | 3D-IC Integration Tier2 Substrate Removal and Electrical Connection to Tier1 Handle Silicon Buried Oxide Tier-1 Handle Silicon Buried Oxide Tier-2 Silicon Buried Oxide Deposited Oxide Metal Tungsten

6 TIPP 2011 | 3D-IC Integration Tier3 Bonding and Alignment Handle Silicon Buried Oxide Tier-1 Handle Silicon Buried Oxide Tier-3 Silicon Buried Oxide Deposited Oxide Metal Tungsten

7 TIPP 2011 | 3D-IC Integration Tezzaron 3D MPW Run Experience Assume identical wafers Flip 2 nd wafer on top of second wafer Bond 2 nd wafer to 1 st wafer using Cu-Cu thermocompression bond Thin 2 nd wafer to about 12um to expose super via Add metallization to back of 2 nd wafer for bump or wire bond After FEOL fabricate 6 um super contact (via) Complete BEOL processing 12 um Additional wafers can be stacked face to back on top of 2 nd wafer TSV 6um Cu-Cu bond In late 2008, consortium of 15 institutions formed to fabricated 3D integrated circuits using the Tezzaron/Chartered process. –Chartered uses a via middle process to add vias to 130nm CMOS process –Tezzaron performs 3D stacking using Cu-Cu thermo compression bonding

8 TIPP 2011 | 3D-IC Integration VTT Frauenhofer IZM IMEC Frauenhofer EMFT CEA LETI (CMP) CNM Possibilities offered by European Industry and Research Institutes 8


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