1. MIT Lincoln Laboratory TIPP 2011 p1 14 June 2011 ckc SOI-Enabled 3D Integrated Circuit Technology TIPP 2011 14 June 2011 C.K. Chen, B Wheeler, D.R.W. Yost, J.M. Knecht, and C.L. Keast MIT Lincoln Laboratory *This work was sponsored by the Defense Advanced Research Projects Agency under Air Force contract #FA8721-05-C0002. Opinions, interpretations, conclusions, and recommendations are those of the authors and are not necessarily endorsed by the United States Government.

2. MIT Lincoln Laboratory TIPP 2011 p2 14 June 2011 ckc Why 3D? Mixed Material Integration Compound Semiconductors Advanced Focal Plane Imagers 100% Fill Factor 3DIC Cross Section Exploiting Different Process Technologies High Performance  -Processors Density, Speed, & Power

3. MIT Lincoln Laboratory TIPP 2011 p3 14 June 2011 ckc Improve Density by Chip Stacking ChipPAC, Inc.Tessera, Inc. Stacked Chip-Scale Packages Stacked-Die Wire Bonding 1 mm

4. MIT Lincoln Laboratory TIPP 2011 p4 14 June 2011 ckc Approaches to High-Density 3D Integration (Photos Shown with Same Scale) Micro bump bond for flip-chip interconnecting two circuit layers TSMC 40-  m pitch, 2010 IEDM MITLL SOI-based 3D vias for interconnecting three circuit layers Thru silicon via (TSV) for interconnecting circuit layers through thinned bulk Si layers TSMC 30-  m pitch, 2010 IEDM 10  m 3D-Vias Tier-1 Tier-3 Tier-2 10  m 3D-Vias

5. MIT Lincoln Laboratory TIPP 2011 p5 14 June 2011 ckc Outline Motivation Lincoln’s 3D Integrated Circuit Process 3D Circuit Demonstrations Summary

6. MIT Lincoln Laboratory TIPP 2011 p6 14 June 2011 ckc 2D versus 3D Circuits 3D Integrated Circuit Cross-Section 2D Integrated Circuit Cross-Section Handle Silicon Single Circuit Layer Circuit Layers Tier 1 Tier 2Tier 3 Handle Silicon 3D Vias Silicon Buried Oxide Deposited Oxide Metal

7. MIT Lincoln Laboratory TIPP 2011 p7 14 June 2011 ckc 3D Integrated Circuit Process Flow Fabricate circuits on Silicon-on-Insulator (SOI) wafers (active Si layer is separated from a handle bulk Si substrate by an insulating buried oxide) Assemble circuit layers into a 3D stack Handle Silicon Buried Oxide Tier-1Handle Silicon Buried Oxide Tier-2Handle Silicon Buried Oxide Tier-3 Tier-1 can be either Bulk or SOI Silicon Buried Oxide Deposited Oxide Metal

8. MIT Lincoln Laboratory TIPP 2011 p8 14 June 2011 ckc Tier2-to-Tier1 Alignment and Bonding Handle Silicon Buried Oxide Tier-1 Handle Silicon Buried Oxide Tier-2 Silicon Buried Oxide Deposited Oxide Metal

9. MIT Lincoln Laboratory TIPP 2011 p9 14 June 2011 ckc Tier2 Substrate Removal and Electrical Connection to Tier1 Handle Silicon Buried Oxide Tier-1 Handle Silicon Buried Oxide Tier-2 Silicon Buried Oxide Deposited Oxide Metal Tungsten

10. MIT Lincoln Laboratory TIPP 2011 p10 14 June 2011 ckc Tier3 Bonding and Alignment Handle Silicon Buried Oxide Tier-1 Handle Silicon Buried Oxide Tier-3 Silicon Buried Oxide Deposited Oxide Metal Tungsten

11. MIT Lincoln Laboratory TIPP 2011 p11 14 June 2011 ckc Handle Silicon Buried Oxide Tier-3 Tier3 Substrate Removal and Electrical Connection to Tier1-Tier2 Handle Silicon Buried Oxide Tier-1 150-mm-diameter three-tier wafer Silicon Buried Oxide Deposited Oxide Metal Tungsten SOI enables elimination of tier2 & tier3 handle Si wafer Thru Si via (TSV) becomes thru oxide via (TOV) TOV offers many advantages vs. TSV – more compact, higher density, oxide isolation, reduced parasitics

12. MIT Lincoln Laboratory TIPP 2011 p12 14 June 2011 ckc 3D Enabling Technologies Precision wafer aligner-bonder –Designed and built at MITLL –Incorporates IR cameras –Demonstrated 0.25-  m wafer-to-wafer alignment capability Low temperature oxide-oxide bonding –Allows use of standard IC processing to complete 3D integration –Room temperature bond followed by a 175C post-bond anneal Concentric 3D via –Formed by high-density-plasma oxide etch –Interconnect formed by CVD tungsten deposition 3D Via Chain SEM cross section

13. MIT Lincoln Laboratory TIPP 2011 p13 14 June 2011 ckc Design Rule 3D Vias (SEM Images Shown at Same Scale with Drawn 3D Via Size) 10um epoxy bond ~15  m 2000 2  m 2004 1.75  m 2005 1.25  m 2008 oxide bond 1024×1024, 8-μm pixel visible image sensor 64 x 64, 12-μm active- pixel sensor 64 x 64, 50-  m pixel LADAR 3 rd 3D multi project run Key 3D Via Developments –Replaced epoxy with oxide bond allowing use of standard silicon integrated circuit processing –Developed concentric 3D vias, allowing much higher density –Reduced 3D via size –Reduced active area exclusion 1.00  m current InP detector array

14. MIT Lincoln Laboratory TIPP 2011 p14 14 June 2011 ckc 3-Tier 3DIC Cross-Section DARPA 3DM3 Multiproject Run Three FDSOI CMOS Tiers 3DIC Process Highlights 11 metal interconnect levels 1.25-  m 3D via tier interconnect Stacked 3D vias allowed Tier-3 RF tungsten gate shunt Tier-3 2-  m-thick RF back metal Oxide Bond Interface Tier-2 Tier-3 3D Via 3D Via Transistor Layers Tier-1 Transistor Layer 20  m RF Back Metal Tier-1

15. MIT Lincoln Laboratory TIPP 2011 p15 14 June 2011 ckc Transistor Characteristics Before and After 3D Integration Tier 1 Tier 2 Tier 3 I ds -V gs plots Width/Length = 8/0.15  m Vdd = +/-1.5V for p/nMOS Before ( ) & after ( ) 3D integration No significant change before and after 3D integration + ▬

16. MIT Lincoln Laboratory TIPP 2011 p16 14 June 2011 ckc Outline Motivation Lincoln’s 3D Integrated Circuit Process 3D Circuit Demonstrations Summary

17. MIT Lincoln Laboratory TIPP 2011 p17 14 June 2011 ckc 3D Circuit Demonstrations Advanced Focal Plane Imager (ISSCC 2005 & 2009) –Photoactive and readout circuit layers –100% fill factor –1024 x 1024 pixel array –8-  m pixel pitch 3-Tier Laser Radar Focal Plane (ISSCC 2006) –3D Integration of three different process technologies 1.5 V FDSOI CMOS counter circuit layer 3.3 V APD drive-sense circuit layer 30 V avalanche photodiode layer High Speed 10Gb/s Tier-to-Tier Interconnect (Frank Chang, UCLA, ISSCC 2007 ) Image from 3D Chip 3-Tier Pixel Layout RFI Test @ 12.5 GHz Output Eye diagram

18. MIT Lincoln Laboratory TIPP 2011 p18 14 June 2011 ckc Mixed Material 3D Integration InGaAs Diode Array with SOI CMOS Readout 150 mm 3D Integrated SOI / InP Wafer SEM Cross Section of Pixel Array Established 3D Si-compatible III-V process Demonstrated 6-  m-pixel SWIR focal plane InGaAs p InP n InP M3 M2 FET 3D TOV Top metal 6  m InP SOI Oxide

19. MIT Lincoln Laboratory TIPP 2011 p19 14 June 2011 ckc Funded by DARPA to explore new 3D circuit applications Engage government, academic, and industry design groups in a Multiproject run, using a proven 3D integration process Provided 3D process design kit based on a decade of fabrication experience over ten different designs Third 3D Multiproject statistics: –38 design proposals received –Requested area: 760 mm 2 –Available area: 484 mm 2 Enabling 3D Design Multiproject Fabrication Runs 3D Multiproject Floorplan CornellU PittUMN JHU UFLRPIDOD MITLL Eutecus PSU ASU NCSU UNHJHU UNH U Idaho MITLL ASU Vanderbilt Rochester NCSU Sensing Mach NRL-Cornell Wash StL Fermi Lab Yale PSU UNH-MIT

20. MIT Lincoln Laboratory TIPP 2011 p20 14 June 2011 ckc Third 3D IC Multiproject Run (3DM3) (Three Tiers of 150-nm 1.5-volt FDSOI CMOS) ASU Cornell DoD Eutecus Fermi Nat’l Lab IBM Johns Hopkins MIT (Campus) MIT Lincoln Lab NCSU NRL Penn State RPI Sensing Mach. SUNY UNH U Idaho U Florida U Minnesota U Pittsburgh U Rochester U Tenn Vanderbilt Wash U StL Yale 3DM3 Participants (Industry, Universities, Laboratories) 3D Circuits Secure ID/Anti-tamper, Stacked SRAM & DRAM, Stacked microprocessor, Hi-speed transmit/ receive, One-chip GPS, Network-on-chip, Reconfigurable neural network, SAR processor elements, RF-switching power converter, Power management for 3DIC’s, Integrated RF MEMS, Implantable biosensors, Bio lab-on-chip 3D Imaging Applications ILC pixel readout, low-power pattern recognition 3D vision chip, Multi-core processor with image recognition, Focal plane image processor, Sub- - sized pixel imaging array 3D Technology Characterization 3D radiation test structures, Jitter-clock skew- propagation delay, Hi-speed I/O, RF building blocks, Meta-material inductor, Stacked MOSFET Completed 3DM3 Die photo 22 mm First 3D Multiproject run 3DL1 chips delivered April 2006 Second 3D Multiproject run 3DM2 chips delivered Nov 2007 Third 3D Multiproject run 3DM3 chips delivered Aug 2010

21. MIT Lincoln Laboratory TIPP 2011 p21 14 June 2011 ckc 3D Integrated Foundry Wafers 22 mm Foundry Wafer Die Photo 150 mm Demonstrated bonding and 3D integration of metal-only Jazz wafers Achieved 100% yield of design-rule 10K 3D via chains 3D integrated Jazz wafers

22. MIT Lincoln Laboratory TIPP 2011 p22 14 June 2011 ckc Summary SOI-Enabled 3DIC Process Process characterization TOV (thru oxide via) vs. TSV (thru silicon via) smaller, higher density, reduced parasitics 3D Circuit Demonstrations –Advanced Focal Planes (100% fill factor) –3D LADAR Chip (mixed technologies) –High Speed 10 Gbps Interconnect –InP-Si Integration (mixed materials) –3D Multiproject Designs 3D Integration of Foundry Wafers

23. MIT Lincoln Laboratory TIPP 2011 p23 14 June 2011 ckc Supplemental Slides

24. MIT Lincoln Laboratory TIPP 2011 p24 14 June 2011 ckc Back Metal-to-Transistor Contact Use of Back Via Improves Design Flexibility Nominal Nominal Cross Section Experimental BV Experimental BV Cross Section ExperimentalExperimental back via-transistor layout –Required layers – back via (BV) & back metal (BM1) –More compact layout reduces transistor footprint by ~40% –Allows back metal use as local interconnect routing layer Transistor NominalNominal design rule transistor layout Required layers -- contact (CON), metal-1 (M1), back via (BV), & back metal (BM1)

25. MIT Lincoln Laboratory TIPP 2011 p25 14 June 2011 ckc Transistor Characteristics Experimental Back Via vs. Nominal Layout I ds -V gs and I ds -V ds plots Width/Length = 8/0.15  m Vdd = +/-1.5V for p/nMOS Tier 3 Vg = 0 to 1.5 V in 0.25 V steps Vg = 0 to -1.5 V in 0.25 V steps