1. E. Sicard - ultra deep submicron Ultra-Deep submicron technology Etienne Sicard Insa etienne.sicard@insa-tlse.fr http://intrage.insa-tlse.fr/~etienne

2. E. Sicard - ultra deep submicron Ultra-deep submicron technology Specific features Embedded Memory Magnetic RAM SOI conclusion Summary

3. E. Sicard - ultra deep submicron 8386899295980104 0.1 80286 80386 486 pentium pentium II 1.0 0.2 0.3 2.0 0.05 Year Pentium IV 0.03 1. Ultra-deep submicron technology Itanium 07 Micron Sub-micron Deep-sub micron Ultra Deep-sub micron Nano

4. E. Sicard - ultra deep submicron 1. Ultra-deep submicron technology Multiple technological options to optimize performance Faster & bigger chips Agreements to handle tremendous costs (ST,Philips,Motorola,TSMC)

5. E. Sicard - ultra deep submicron 2. Specific features Improved tretch isolation Multiple MOS options Multiple metal layers Stacked vias Low K dielectric to reduce couplings Copper to speed up signal transport High K dielectric to reduce leakage

6. E. Sicard - ultra deep submicron 2. Specific features 3-6 MOS options High Speed: normal MOS Very high speed: critical path Low leakage: for low power High voltage: for I/Os Double-gate: for embedded EEPROM RF : optimized for GHz amplifiers

7. E. Sicard - ultra deep submicron High Voltage Low Leakage High Speed Ultra High Speed EEProm Application-oriented MOS device Same basic mechanism MRamRF New physical properties in EEPROM and MRam 2. Specific features

8. E. Sicard - ultra deep submicron 2.5V 1.2V High Speed High Voltage 1.2V Low leakage 1.2V 2.5V 1.2V 2. Specific features 1.8V 2.5V Example in 0.12µm technology

9. E. Sicard - ultra deep submicron 2. Specific features Option layer Option layer properties Simple access to low leakage, high voltage and isolated Pwell

10. E. Sicard - ultra deep submicron 2. Specific features Low leakage High speed High voltage Simulation of the 3 MOS options

11. E. Sicard - ultra deep submicron 2. Specific features High speed Low leakage Small Ion reduction Low leakage MOS has higher Vt, slight Ion reduction Low leakage MOS has 1/100 Ioff of high speed MOS Ioff ~10nA Ioff ~100pA

12. E. Sicard - ultra deep submicron 2. Specific features 0.1µm process (TSMC+ST+IBM+…) Each MOS is optimized for a target customer application Towards a world-wide standard process which will ease design

13. E. Sicard - ultra deep submicron Cmos Embedded memories Volatile eDRAMSRAM Non volatile ROMEEPROMFRAM 80% of a system-on-chip Bottleneck for bandwidth 3. Embedded Memory

14. E. Sicard - ultra deep submicron Parasitic capacitance: 2fFSpecific capacitance: 3-30fF CBCB CSCS 3. Embedded Memory

15. E. Sicard - ultra deep submicron 3. Embedded Memory 2nd Poly Floating Poly Used in EPROM, EEPROM and Flash memories Double-Gate MOS

16. E. Sicard - ultra deep submicron 3. Embedded Memory Double-Gate MOS Gate discharged Ids Vds Single gate Double gate Gate charged Ids Vds Single gate

17. E. Sicard - ultra deep submicron 12V 3. Embedded Memory Double-Gate MOS: write/erase by tunneling 0V 0 Vdd Accelerate “Hot” electron Tunneling 12V “Cold” electron Tunneling write erase Dense but slow

18. E. Sicard - ultra deep submicron 4. Magnetic RAM Dense, fast, non-volatile: universal memory 2 stage magnetic states Silicium, Cobalt et Nikel A high magnetic field changes the state of the material equal to I=5mA

19. E. Sicard - ultra deep submicron Principles: Write: i/2 on the line, i/2 on the column gives a current high enough to change the state Read: i/4 on the line, i/4 on the column and monitor the attenuation of current due to magnetic state Principles: Write: i/2 on the line, i/2 on the column gives a current high enough to change the state Read: i/4 on the line, i/4 on the column and monitor the attenuation of current due to magnetic state Line Column i/2 i/4 Write Read i/2 Erase i/4 4. Magnetic RAM

20. E. Sicard - ultra deep submicron The next major evolution? Less capacitance Less distance between nMOS and pMOS Less leakage CMOS compatible >50% faster circuits Kink effect Fully or partially depleted? 5. Silicon-On-insulator

21. E. Sicard - ultra deep submicron 6. Conclusion The ultra-deep submicron technologies introduce new features Low leakage MOS targeted for low power High voltage MOS introduced for I/O interfacing Double-poly MOS for EPROM/Flash memories Embedded memory are key components for System-on-chip Magnetic RAM to become the “universal memory” SOI has many promising features, some design issues pending