1. IBM Foundry Oxide Thickness LithographyProcessOperatingOxide NameVoltageThickness nm 0.25 µm6SF2.55 3.37 0.13 µm8RF1.2 & 1.52.2 2.2 & 3.35.2 Satish Dhawan, Yale UniversitySeptember 21, 2009

2. CompanyDeviceProcessFoundryOxideTime inDose beforeObservation Name/ Number NameThickness SecondsDamage seenDamage Mode Countrynm IHPASIC customSG25V GODIHP, Germany5 53 Mrad slight damage XySemiFET 2 ampsHVMOS20080720China7 52 Mrad minimal damage XySemiXP2201HVMOS20080720China7 In Development XySemiXPxxxx HVMOS20080720 China7 In Development Synch Buck XySemi XP5062 China 12.3 800 44 krad loss of V out regulation TI TPS54620LBC5 0.35 µm 20 420 23 krad abrupt failure IRIR3841 9 & 25230 13 Krads loss of Vout regulation EnpirionEN5365CMOS 0.25 µm Dongbu HiTek, Korea5 11,500 85 krad Increasing Input Current, EnpirionEN5382CMOS 0.25 µm Dongbu HiTek, Korea52000 111 Krads loss of V out regulation EnpirionEN5360 #2SG25V (IHP)IHP, Germany522 Days 100 MradsMinimal Damage EnpirionEN5360 #3SG25V (IHP)IHP, Germany510 Days 48 MradsMinimal Damage Non IBM Foundry ICs Satish Dhawan, Yale UniversitySeptember 21, 2009Satish Dhawan, Yale UniversitySeptember 21, 2009

3. OxideSiGate Oxide Trap Region Tunneling Region Thickness ~ 5 nm Fig A: Physical Location of Defects from their Electrical response in CMOS devices; ref T.R> Oldham Fixed Charge States Switching Charge States GNDSwitching Charge States V +- - - + - + -- + + + + -

4. Source HEMT Pulse Generator 0.1 – 2 MHz 50 % Duty Cycle July 28. 2009 FET Setup for Proton Radiation Exposure @ LANSCE. ~ 0.070 Amps Power Supply V out = 20 Drain Gate 100 0 to -5 V Powered FET DMM DC mV 330 2 Watts 1 Ω GND 50 Ω Terminator 2 Shorted FETs G D S Pomona Box Reading = ~ 0.035 Amps @ 50% Duty Cycle No change in the average current for 200 Mega rads 30 meter Coax

5. Model 250 Yale University May 22, 2008 Relay Current Out Vout/ Load Current IN Voltage IN Input Power 0.5 Ohms 0.05 Ohms Output Power + + - - To Keithley Instruments 2701 Scanning Voltmeter with 7706 Card A Board: Channels 101 -104 B Board: Channels 105 - 108 C Board: Channels 109 - 112 D Board: Channels 113 - 116 R Red Orange BK/O Black Blue Green Blue/Y or Black Yellow Power Cable Colors Molex 9 pin Female Molex 9 pin Male DC-DC Evaluation Board 8 Fly Wires Solder to Eval Board 5 ft Length Can Add Extender Cable DAC: 123, 124 DIO : 121,122 101102 103 104 121 CHANNEL Numbers

6. Power Supply VInput 5.5 V max to prevent damage. GND Buck Regulator Eval Board Size = 3 inch x 3.5 inch Banana Jacks / Solder Wires Satish Dhawan, Yale University Load Resistor = 0.3 to 1.5 Ώ Line Drop ~ 0.25 volts @ 6 amps in each Leg ??? Twisted Pair Preferred V Input Monitor. 2 Wire Differential V Output Monitor 2 wire Differential Agilent 34970A & Multiplexer 33901A to Monitor I & V April 21. 2008 DC-DC Regulator Setup for Radiation Exposure GND V Output = 1.5 V. 1 to 5 Amps. ~ 0.5 Amps. V out > 5 – 20 Volts 4 Wire Current shunt V Output Monitor 2 wire Differential 4 Wire Current shunt V Output Monitor 2 wire Differential DC-DC Converter Voltage ratio = 8/10 Load: Rated Current or maximum without cooling ~ 1 amp Setup for 4 EVAL Boards Measure Bias Current with Load disconnected Solder all wires ???? Switch on/off