1. ITRS Winter Conference 2008 Seoul, Korea 1 Work in Progress: Not for Distribution 2008 ITRS Emerging Research Materials [ERM] December 6-9, 2008 Michael Garner – Intel Daniel Herr – SRC

2. ITRS Winter Conference 2008 Seoul, Korea 2 Work in Progress: Not for Distribution ERM Agenda December 7, 2008 TimeSubjectLocation 9:00 -10:00PlenaryPlenary RM 10:30-11:30ERM Critical Assessment & A&P, & Litho Plans ERM 11:30-12:30Assembly & Packaging TWG -ERM A&P Area 12:30-13:30Lunch 13:30-14:00Litho TWG - ERMLitho Area 14:00-14:45ESH Table, Modeling NeedsERM 14:45-15:30ESH TWG-ERMESH Area

3. ITRS Winter Conference 2008 Seoul, Korea 3 Work in Progress: Not for Distribution ERM Agenda December 7, 2008 TimeSubjectLocation 15:30-16:30Modeling TWG-ERMModeling Area 16:30-17:00Interconnect Needs & Assessment ERM 17:00-17:45FEP, PIDS & ERD NeedsERM 17:45Adjourn

4. ITRS Winter Conference 2008 Seoul, Korea 4 Work in Progress: Not for Distribution ERM Agenda December 8, 2008 TimeSubjectLocation 9:00-10:00Beyond CMOSPlenary RM 10:00-11:00Interconnect TWG-ERMInterconnect Area 11:00-11:45FEP TWG - ERMFEP Area 11:45-12:30PIDS TWG -ERMPIDS Area 12:30-14:00Lunch (Public Presentation & EOD Wrap up due) 14:00-14:45ERD-ERMERM Room 14:45-15:30Metrology Needs & Workshop Plans, Public Conf. Presentation ERM

5. ITRS Winter Conference 2008 Seoul, Korea 5 Work in Progress: Not for Distribution ERM Agenda December 8, 2008 TimeSubjectLocation 15:30-16:00ERM, ERD, FEP, PIDS Alignment TBD 16:00-16:30Metrology TWG-ERMMetrology Area 16:30-18:15Plenary Plenary RM 18:15Adjourn 18:30ITRS Dinner December 9, 2008 Public Conference

6. ITRS Winter Conference 2008 Seoul, Korea 6 Work in Progress: Not for Distribution 2009 ERM Workshops F-t-F: Novel Macromolecules: ~February 28, 2009, SF Bay Area: Aligned with SPIE Microlithography Symposium. F-t-F: ERM Complex & Strongly Correlated Electron Materials, Early March ‘09, Japan E-WS: Complex Metal Oxides January ~18, 2009 Modeling WS SF MRS Metrology WS Albany, May 2009

7. ITRS Winter Conference 2008 Seoul, Korea 7 Work in Progress: Not for Distribution Emerging Research Materials 2009 Establish ERM Outline and Writing Assignments Refine Critical Assessment Process –CMOS Extension: Detailed Critical Assessment –Beyond CMOS: Trends on critical materials & properties –Update Key Challenges Tables Plan Workshops on ERM –All workshops should identify Metrology, Modeling and ESH support as appropriate Finalize new materials needs based on ITWG inputs –ERD, Lithography, FEP, Interconnects, Assembly & Packaging, PIDS –Establish Concrete targets –Functional Diversification

8. ITRS Winter Conference 2008 Seoul, Korea 8 Work in Progress: Not for Distribution ERM Outline Scope Introduction Difficult Challenges Challenges for Multi-application ERM (Back-up?) Materials for Alternate Channel CMOS (PIDS & ERD) –Critical Assessment Materials for Memory Devices –Critical Assessment ERM for Beyond CMOS (ERD) ERM for Lithography –Resist (pixilated, Multi photon resist, novel) –Self Assembled Materials –Transition Table (Molecular glasses, evolutionary resist macromolecular design, etc.) ERM for FEP & PIDS –Deterministic Doping –Self Assembly for Selective Deposition & Etch ERM for Interconnects ERM for Assembly & Package ERM ESH Research Needs ERM Metrology Needs ERM Modeling Needs

9. ITRS Winter Conference 2008 Seoul, Korea 9 Work in Progress: Not for Distribution X-cutting Challenges LDM –Control of placement & direction –Control of nanostructure, properties & macro properties Contact & Interface issues Macromolecules (Transition table?) Self Assembled Materials –Control of placement, defects, and registration Complex metal oxides –Control of properties, interfaces, defects, and moisture degradation

10. ITRS Winter Conference 2008 Seoul, Korea 10 Work in Progress: Not for Distribution Materials for Alternate Channel CMOS III-V & Ge (John Carruthers) Semiconductor Nanowires(Ted Kamins) Graphene (Daniel Beneshal) Carbon Nanotubes (Jean Dijon)

11. ITRS Winter Conference 2008 Seoul, Korea 11 Work in Progress: Not for Distribution III-V Ge Alternate Channel Partition Proposal ERM Materials, Interfaces & Process Issues & Challenges Critical Assessment of Materials & Integration Capabilities ERD Integrated Device Performance Assessment & Challenges Critical Assessment of Device Performance PIDS III-V & Ge Potential Solution Collaborate with ERD on device Readiness FEP Potential HVM Manufacturing issues

12. ITRS Winter Conference 2008 Seoul, Korea 12 Work in Progress: Not for Distribution 12 Production Ramp-up Model and Technology Cycle Timing Volume (Parts/Month) 1K 10K 100K Months 0 -24 1M 10M 100M Alpha Tool 1224 -12 DevelopmentProduction Beta Tool Production Tool First Conf. Papers First Two Companies Reaching Production Volume (Wafers/Month) 2 20 200 2K 20K 200K Source: 2005 ITRS - Exec. Summary Fig 3 Fig 3 2008 - Unchanged

13. ITRS Winter Conference 2008 Seoul, Korea 13 Work in Progress: Not for Distribution Next Steps Key Items to Resolve before March ITRS –ERM Assessment Criteria Establish Research Targets –Review ERD Criteria –PIDS Draft Potential Solution Statement –FEP Draft HVM Capability Requirements

14. ITRS Winter Conference 2008 Seoul, Korea 14 Work in Progress: Not for Distribution Fundamental Alternate Channel Common Question Does ballistic transport dominate over intrinsic mobility?

15. ITRS Winter Conference 2008 Seoul, Korea 15 Work in Progress: Not for Distribution III-V & Ge Key Messages Gate Dielectric Growth techniques are being developed –Current Approaches (III-V): MBE Growth of III-V/Ga2O3/GdGaO Stack (Freescale) As Cap/ In situ As decap +ALD HfO2 (Stanford) NH4OH-ALD Al2O3 or HfO2 on III-V (Purdue) InAlAs Barrier (MIT) –Current Approaches (Ge): GeOxNy Nitridation (Stanford) Ozone Oxidized Ge + ALD High κ dielectric HfO2 (Stanford) LaGeOx-ZrO2(Ge) High K (Dual Logic) Controlling surface oxide formation is critical for control of interface states –Control of interface stochiometry, structure and defects is critical –GeOx stochiometry control affected by growth temperature

16. ITRS Winter Conference 2008 Seoul, Korea 16 Work in Progress: Not for Distribution III-V & Ge Key Messages Ge dopant activation requires high temperature –Incompatible with III-V process temperatures S/D Contact Formation Current Approaches: –Ge P-MOS: Boron with many ohmic metal contact options N-MOS: Dopants have high diffusivity & metals schottky barriers –III-V W contact/InGaAs cap/InAlAs (MIT) Are barriers needed to keep dislocations out of the channel?

17. ITRS Winter Conference 2008 Seoul, Korea 17 Work in Progress: Not for Distribution III-V Ge Heteroepitaxy Challenges Reduction of dislocation densities Control of stress in III-V & Ge integrated on Si –Ultrathin films –Heterostructures to reduce defects Effect of antiphase domains on carrier transport Identify a crystal orientation that favors epitaxy and interface states.

18. ITRS Winter Conference 2008 Seoul, Korea 18 Work in Progress: Not for Distribution Graphene Challenges & Status Ability to deposit graphene on appropriate substrates Producing a bandgap –Fabricating Narrow Graphene Lines –Applying a high electric field to bi-graphene Achieving high mobility in an integrated structure Achieving a high on-off conduction ratio

19. ITRS Winter Conference 2008 Seoul, Korea 19 Work in Progress: Not for Distribution Graphene Deposition CVD of Graphene on Ni, Pt, and Ir –Graphene is strongly bonded to Ni, but has a lattice match –Graphene deposited on Pt is not distorted, is not lattice matched, but is weakly bonded SiC decomposition –Issue: High process temperature (>1100C) Exfoliation Techniques –Graphene Oxide Decomposition (Mobility <1000cm2/V-sec) Oxidation process produced islands of graphene surrounded by disordered material (hoping conduction) –Try less aggressive oxidation process –Solvent exfoliation Solvents capable of separating graphene sheets are difficult to evaporate (high boiling point) –Tape exfoliation

20. ITRS Winter Conference 2008 Seoul, Korea 20 Work in Progress: Not for Distribution Producing a Graphene Bandgap Fabricating Narrow Graphene Lines –Requires patterning sub 20nm lines –Edge defect control is challenging (Eg & Mobility) Applying a high electric field to bi-graphene –Field ~1E7 V/cm

21. ITRS Winter Conference 2008 Seoul, Korea 21 Work in Progress: Not for Distribution Graphene Mobility Mobility on substrates is reduced Graphene Oxide Mobility –Degraded by disordered regions

22. ITRS Winter Conference 2008 Seoul, Korea 22 Work in Progress: Not for Distribution Beyond CMOS M. Garner Molecular State (Alex Bratkovski & Curt Richter) Spin Materials (In-Yoo / Kang Wang) –FM Semiconductors –CNT & Graphene –Tunnel Barriers –FM metals –Multiferroics Complex Metal Oxides (TBD) –Ferroelectrics (Memory) –Tunnel Barrier

23. ITRS Winter Conference 2008 Seoul, Korea 23 Work in Progress: Not for Distribution ERM Beyond CMOS Scope: 2009 2007Transition InTransition Out2009 Molecules & Interfaces Transition out? Inadequate progress Status FM Semiconductors Curie Temp Table Tc Graph FM Oxide Semiconductors Status, Table or Graph Spin Semiconductor Status Spin BarriersStatus MultiferroicsStatus FM MetalsStatus

24. ITRS Winter Conference 2008 Seoul, Korea 24 Work in Progress: Not for Distribution ERM Beyond MOS Memory: 2009 2007Transition InTransition Out2009 Complex Metal Oxide Resistance Change Status Oxides & Interfaces FE Memory Status Nanotube for Nanomechanical memory Status Molecules & interfaces for Molecular Memory Transition out?Status MRAM MaterialsStatus Ionic Transport Materials

25. ITRS Winter Conference 2008 Seoul, Korea 25 Work in Progress: Not for Distribution Molecular Devices Top contact formation is still a significant issue Determining that switching is due to the molecular energy levels is difficult

26. ITRS Winter Conference 2008 Seoul, Korea 26 Work in Progress: Not for Distribution Spin Materials Ferromagnetic III-V (Mn) semiconductors have verified Curie temperatures 100-200K –Carrier mediated exchange Nanowires of GeMn have reported ferromagnetic properties at 300K+, but carrier mediated exchange with gated structure is difficult to verify Oxides doped with transition metals have ferromagnetic properties –Ferromagnetism is determined by carrier doping, but it isn’t clear whether this can be modulated with electric fields –Ferromagnetism is proposed to be in an impurity band vs. the oxide bands. –It is not clear whether this is useful for device applications

27. ITRS Winter Conference 2008 Seoul, Korea 27 Work in Progress: Not for Distribution Spin Materials (Cont.) Spin Tunnel Barrier Materials –MgO crystalline material is the best spin selective tunnel barrier to date May work with a limited number of materials due to lattice match requirement –Films must be ~9A thick –Al2O3 films work, but with much lower selectivity Multiferroics –BaFeO3 has ferroelectric & antimagnetic properties coupled Limited degrees of freedom & low coupling

28. ITRS Winter Conference 2008 Seoul, Korea 28 Work in Progress: Not for Distribution ERM for Lithography (Dan Herr & Joe Gordon, Atsushi Shiota) ERM for Patterning –Novel Macromolecules for Resist Multi wavelength resist (Dual exposure) (Transition in?) Pixellated resist –Novel Macromolecules for Contrast Enhancement Layer Multi wavelength CEL (Dual Exposure) (Transition in?) –Novel molecules for Non CAR (TBD at Workshop) –DSA Materials –Imprint molecules (Transition? ) Functional materials ERM for Immersion Fluids –Nanoparticles for immersion fluids (Transition Table?)

29. ITRS Winter Conference 2008 Seoul, Korea 29 Work in Progress: Not for Distribution Litho July ‘08 –General: ERM requested confirmation of timing, metric families, and quantitative metrics –3rd generation immersion lithography technology: There was considerable discussion on this topic; Concern was expressed that this technology may be pushed out too far to meet required insertion windows; 2012 insertion appears unlikely It was agreed that the ERM WG would wait for the Litho TWG to address this issue and make a recommendation; –Novel macromolecules for resist applications: Use the same criteria as is used for resist. –Increased interest in intermediate state photochemistry, chemical image enhancement, two photon patterning, imprint, optical threshold layers, and non-CAR systems –Nanoparticles: Drop the optics abrasion requirement, since this would be a difficult property for the university research community to characterize; –Directed self assembly for patterning applications: The Lithography ITWG reviewed the DSA research requirements and agreed to provide feedback at a later date.

30. ITRS Winter Conference 2008 Seoul, Korea 30 Work in Progress: Not for Distribution ERM Litho Scope: 2009 2007Transition InTransition Out2009 Resist Molecular Design To Litho TWG Molecular GlassesTo Litho TWG Directed Self Assembly Assess Dual Wavelength Resist Molecules Into ERMAssess at WS Dual Wavelength CEL Layer Molecules Into ERMAssess at WS Non-CAR Molecules Into ERMAccess at WS High index Immersion Fluids Transition out?TBD Imprint Molecules Imprint Resist? Evolutionary, Remove? TBD

31. ITRS Winter Conference 2008 Seoul, Korea 31 Work in Progress: Not for Distribution ERM Lithography Critical Assessment

32. ITRS Winter Conference 2008 Seoul, Korea 32 Work in Progress: Not for Distribution ERM workshop Novel chemical system for advanced lithography / conjunction with SPIE advance lithography 2/28 @ Intel Santa Clara Scope –Identify new molecular architectures and chemical/physical mechanism to support beyond hp15nm lithography. –Exclude discussion of conventional immersion extension, chemical amplified EVU system, direct self-assembly and nanoimprints.  these topics are covered by separate workshops. Topics for Discussion –Potential Resist Materials Non-CAR, Negative tone MG resist or organic/inorganic resist –Double Exposure materials IST/CEL/OTL –Unconventional materials for single exposure –Resist characterization/process improvements –Lithography Simulations/Lithography physics

33. ITRS Winter Conference 2008 Seoul, Korea 33 Work in Progress: Not for Distribution Potential Speakers and Advisor

34. ITRS Winter Conference 2008 Seoul, Korea 34 Work in Progress: Not for Distribution ERM for FEP Dan Herr Deterministic Doping –Research Equipment Options –Self Assembly Driven Selective Etches & Cleans –Research or Engineering? Selective Deposition

35. ITRS Winter Conference 2008 Seoul, Korea 35 Work in Progress: Not for Distribution FEP July ‘08 –General: –FEP will provide feedback on specific material assessment criterion For selective deposition processes: –Focus on techniques to deposit graphene on silicon and processes for selective deposition of III-V compounds –Graphene: Assess cleaning chemistries, processing, and edge passivation –III-V Alternate channel materials: Assess cleaning chemistries, processing, and edge passivation –Directed self assembly: Establish deterministic doping targets and requirements –Dielectric materials: Establish and assess projected high-  research requirements for the DRAM capacitor, especially at projected film thicknesses The current FEP requirements table shows that the dielectric constant is projected to reach 120, and then decrease to ~90, which appears to be unrealistic. FEP will resolve this apparent inconsistency. –Spin materials: Add to FEP’s ERM assessment tables

36. ITRS Winter Conference 2008 Seoul, Korea 36 Work in Progress: Not for Distribution ERM FEP 2009 Scope 2007Transition InTransition Out2009 Directed Self Assembly (DSA) for Deterministic Doping Status Shuttered Implant for Deterministic Doping Into ERMStatus & Challenges DSA Selective Deposition Status & Challenges DSA Selective EtchResearch or Engineering? Status & Challenges DSA Selective Cleans Research or Engineering? Stats & Challenges

37. ITRS Winter Conference 2008 Seoul, Korea 37 Work in Progress: Not for Distribution Deterministic Doping Approaches Precision ion implantation Scanning Tunneling Microscope Dopant Placement Langmuir self assembly & deposition of dopants

38. ITRS Winter Conference 2008 Seoul, Korea 38 Work in Progress: Not for Distribution Interconnects Yuji Awano ERM for low impedance interconnects & Vias –CNTs –Nanowires –Graphene ERM for Low κ ILD –Macromolecules (Dan check with Scott List) Selective Etch & Deposition

39. ITRS Winter Conference 2008 Seoul, Korea 39 Work in Progress: Not for Distribution July ’08 Interconnect –General: To ensure a meaningful comparison, standardize metrics for each application, across the set of candidate materials, e.g. CNTs, graphene, and nanowires for interconnect applications –Add Chris Case to the ERM Distribution list –Alternate channel materials: Focus on contact materials for Ge and III-V materials. Contact resistance and S/D leakage are critical properties that need to be addressed –CNTs for Interconnects: –Separate this topic into via and planar interconnect applications –CNT interconnects must have a conductivity at least 2X greater than copper Graphene Interconnects: –Determine the width and layer thickness dependence of the conductivity –Novel Barrier Layers: Target barrier layer thicknesses of 1-2 atomic layers It is imperative to realize low process integration complexity Barrier material candidates must provide a good diffusion barrier to Cu

40. ITRS Winter Conference 2008 Seoul, Korea 40 Work in Progress: Not for Distribution ERM Interconnect Scope: 2009 2007Transition InTransition Out2009 Nanotube Interconnects Assess Nanowire Interconnects Assess Nanotube ViasAssess Nanowire ViasAssess 1-2 monolayer barriers ERMAssess Macromolecule Low K ILD Transition Table?Status DSA EtchTransition?Status DSA Selective Deposition Transition?Status

41. ITRS Winter Conference 2008 Seoul, Korea 41 Work in Progress: Not for Distribution Emerging Interconnect Applications  Vias Multi-wall CNT Higher density Contact Resistance Adhesion  Interconnects Metallic Alignment Contact Resistance  Dielectrics Novel Polymer ILDs Y. Awano, Fujitsu H. Dai, Stanford Univ. Quartz Crystal Step Alignment Ref. 2005 ITRS, INT TWG, p. 22 ERMs Must Have Lower Resistivity Cu

42. ITRS Winter Conference 2008 Seoul, Korea 42 Work in Progress: Not for Distribution Assembly & Packaging Nachiket Raravikar ? ERM for Thermal Heat Spreading Low Temperature Assembly –Lead free Chip to Package Electrical Interconnects Controlled polymer properties –Application –Process –Operation –Bromine Free High Performance Package Capacitors Energy & Bio Application requirement & status will be descriptive in 2009

43. ITRS Winter Conference 2008 Seoul, Korea 43 Work in Progress: Not for Distribution July:ERM WG - Assembly and Packaging ITWG: CNTs for thermal interface Applications: –Critical metrics: Low contact resistance and CNT density –Even though this technology is low on the learning curve and commercial viability usually ranks as a low priority metric during the exploratory phase of research, researchers are encouraged to consider cost implications as one of several critical success factors for assessing the potential maufacturability of the CNT TIM; Oxide nanoparticles for package filler applications: –Add biocompatibility and assess cost implications Nanometal for chip attach applications: –Include the following additional families of requirements: melting point, electrical conductivity, electromigration resistance, stress relief, inter-metallic formation, and properties, as needed, for predictive modeling. Macromolecules for polymer adhesion applications to different materials: –Add water absorption (free), CTE, modulus, bonding, and debonding Complex metal oxides: –Add dielectric constant at minimum thickness and charge leakage Assembly & Packaging Priorities for e-Workshops were: –Priority #1: Assembly & Package Dielectrics High and Low K materials –Priority #2: Nanocomposite moisture barriers and adhesion materials –Priority #3: Low temperature assembly materials & nanowires –Priority #4: Carbon Nanotube thermal Interface materials

44. ITRS Winter Conference 2008 Seoul, Korea 44 Work in Progress: Not for Distribution ERM A&P Scope: 2009 2007Transition InTransition Out2009 Nanotube Electrical Interconnects Status Nano soldersStatus Nanocomposite package polymers Status High density, high performance capacitors Status Nanotube thermal interface materials Status Low assembly temperature materials (ACF?) Add to ERM (?)Status Ag Nano ACF Nanowires for Power & Detectors Add to ERMStatus

45. ITRS Winter Conference 2008 Seoul, Korea 45 Work in Progress: Not for Distribution ITRS 2008 ERM A&P Workshops: key learnings Nachiket Raravikar & Raja, Yuji Awano Intel Corporation September 2008

46. ITRS Winter Conference 2008 Seoul, Korea 46 Work in Progress: Not for Distribution Title: CNT Interconnects & Thermal Challenges –Focus: Update the progress in assembly compatible integration & contact resistance control of CNT for interconnect and thermal applications –Teleconference [Apr-May’08] Prof. Banerjee, UCSB [May’08] Prof. Majumdar, UC-Berkeley [Aug’08] Focus area 1: CNT Organizer: Nachiket Raravikar

47. ITRS Winter Conference 2008 Seoul, Korea 47 Work in Progress: Not for Distribution CNT TIM workshop summary The following two still remain challenges in CNT TIM applications: 1.Controlling CNT array density -Best density up to ~ 10 10 – 10 11 /cm 2 achieved by optimizing the catalyst under-layer thickness; -It’s not clear what the target density should be and whether an array density higher than the above could be achieved 2.Increasing bonding or wetting of CNT with Si, SiO 2 and metals to lower thermal interface resistance -Lowest thermal interface resistance achieved by In coating of CNT: Interfacial conductance [glass-In-CNT-Si]: 3.1±1.5 MW/m 2 ∙K as compared to Glass-CNT-Si: 0.075±0.005 MW/m 2 ∙K -Issue of In wetting on CNT remain -Not many strategies exist on improving thermal interface conductance between CNT-Si or CNT-metals -Realistic targets of experimentally achievable interfacial thermal conductance need to be defined

48. ITRS Winter Conference 2008 Seoul, Korea 48 Work in Progress: Not for Distribution CNT summary The following has been achieved... Low electrical contact resistance, close to theoretical value, has been achieved experimentally High frequency response of nanotubes (impedance, inductance, skin effect) has been modeled and skin effect is predicted to be negligible Some progress towards achieving high density CNT arrays 10 10 – 10 11 /cm 2 In-CNT interface shown to reduce thermal interface resistance The following challenges or unknowns still remain... Low T CVD growth of CNT Increasing CNT array density Reducing CNT electrical and thermal contact resistance

49. ITRS Winter Conference 2008 Seoul, Korea 49 Work in Progress: Not for Distribution Title: Polymer nano-composites mechanical, rheological challenges Focus: 1. Adhesion: Update progress in interfacial adhesion control between nanoparticles and matrix as well as between polymers and metals; –2. Multifunctionality: high toughness, low CTE, high/low modulus, flow properties etc. using nano-fillers; –3. Moisture diffusion barriers: block moisture diffusion for regular as well as MEMS packages –Teleconference Prof. Giannelis, Cornell [Aug’08] Focus area 2: Polymer Nano-composites Organizer: Nachiket Raravikar

50. ITRS Winter Conference 2008 Seoul, Korea 50 Work in Progress: Not for Distribution Macromolecules/nano-composites workshop summary Adhesion improvement with nano-composites –Adhesion enhancement is shown with nanocomposites, however the mechanism is not well understood (nanoclay composite to Silicon) Nano-composite mechanical property enhancement [modulus, CTE, toughness, elongation] –Decoupling of properties (stiffness-toughness) is a very attractive feature of nano-composites and has been demonstrated with various composite systems –Hypotheses of toughening of nano-composites are in place: nano- particle migration to crazes to prevent crack propagation; hypothesis validation is not done yet Nano-composite moisture absorption –Relative permeability is shown to drop significantly at very small volume fractions of nanoparticles [silicates] Dispersion, interface tailoring of nano-fillers with polymer matrix –Various surface chemistries demonstrated to improve dispersion of nano-silica (particles or clays) in composites: epoxy silica, amino silica, HMDS silica –Dispersion issues still remain such as intercalation or exfoliation of clay or nano-particle clusters, delamination at filler-matrix interface

51. ITRS Winter Conference 2008 Seoul, Korea 51 Work in Progress: Not for Distribution ERM for Low Assembly Temperature 10nm SnAg Melting point reduced to 194C –Surfactant passivation required –Formed good solder joint with 230C reflow 10nm SnAgCu melting point reduced to 199C –Surfactant passivation required Nanosilver based ACF sinters at <200C –Improved contact resistance –Increased current carrying capability –Integrated self assembled monolayer improved adhesion

52. ITRS Winter Conference 2008 Seoul, Korea 52 Work in Progress: Not for Distribution ERM ESH Needs (July ’08) M. Garner & J. Jewett –Jim Jewett and Mike Garner agreed to write a white paper on NanoEHS needs to attach to the ITRS ESH & ERM chapters. Toxicology research integration and summary –Dan Herr recommended that the ESH-ERM communities consider driving the energy and health related opportunities that are emerging from the ITRS Functional Diversification agenda. This may enable the ESH community to get ahead of regulation, as functional diversification may provide enabling energy and health opportunities and enable the industry to leap frog over, remove, and/or avoid emerging issues.

53. ITRS Winter Conference 2008 Seoul, Korea 53 Work in Progress: Not for Distribution Develop timelines for intercept commerce Regulatory Processes –What is the Research Timelines –Resolution of Acute & Chronic Issues –Klebosol example WSC (?)

54. ITRS Winter Conference 2008 Seoul, Korea 54 Work in Progress: Not for Distribution Metrology Needs Yaw Obeng & Alain Diebold Korea ERM asked for Reference Material needs to be added

55. ITRS Winter Conference 2008 Seoul, Korea 55 Work in Progress: Not for Distribution Metrology July ‘08 –The ERM – Metrology collaborative engagement continues to increase –No new issues were identified by the ERM, except the need for nanoscale graphene characterization –For example, Alain identified a number of new physical effects under study in graphene, including electron “puddling”.

56. ITRS Winter Conference 2008 Seoul, Korea 56 Work in Progress: Not for Distribution ERM Metrology Gaps and Requirements  Generic Gaps  Standards and Requirements for rapidly evolving materials and techniques.  Dopant activation Metrology for USJ  Interface Metrology  Surface/film analysis on vertical surfaces  In-situ monitoring of multi-component oxides  In-Line work function measurements – band gap engineering for flash and gates  Nanowires  3-D Atom mapping for compositional analysis / doping mapping  Non-Destructive local strain/stress measurement  Graphitic Materials  Defects / Substrate Interface Characterization and Stress / Thickness control  Understand substrate effects on Raman spectroscopy (see Das et al bull. Mater. Sci. 31(3), 2008 pp579-584)  Understand angle resolved XPS Data  Harmonize and Understand Mobility data  New channel material or structures challenges  SiGe & III-V  Trigate FinFET,  Complex Oxides / Multiferroics  Better Characterization of Domain Walls  Better understanding of PFM and XMCD Data  Lithography  Precise and accurate overlay metrology  Metrology for charactering double patterning  Characterization of Immersion fluids  3-D packaging (TSV /Nanowire Interconnects  Standards  Thermomenchical stability metrology

57. ITRS Winter Conference 2008 Seoul, Korea 57 Work in Progress: Not for Distribution Modeling Needs Sadasivan Shankar

58. ITRS Winter Conference 2008 Seoul, Korea 58 Work in Progress: Not for Distribution Modeling July ‘08 –The scope of the Modeling ITWG was discussed and its relationship with the ERM WG. While much of the ERM focus lies outside the current focus of the M&S ITWG, emerging materials will require considerable application related modeling that will serve as a bridge to the design community, i.e. compact models. –More discussion is needed, especially with respect to : –ERM related metrology, compact models, application specific material models, such as the dielectric constant of thin high-  complex metal oxides and the unique domain structures of mixed phase segregated block copolymers. –Modeling is needed to extract critical information from parallel metrology measurements and to decouple nanometer scale physical interactions This should topic be included in ERM – M&S discussions

59. ITRS Winter Conference 2008 Seoul, Korea 59 Work in Progress: Not for Distribution Needs in Materials Modeling Extension to larger scales for equilibrium calculation and temperature dependence of properties and processes –Gaps in ability to model integrated systems Metallic systems specifically transition and inner transition metals. –Need specific functionals that could be tested with more rigorous techniques, More generalized extension for band gaps –Currently hybrid and metal functionals are being developed but need to be thoroughly characterized Strongly correlated systems require model development to explain the interaction between spin, charge, and lattice changes for potential use in spin wave propagation. –Requires quantification of the energy associated with spin switching and transport and the identification of speed limitations. Extension or linking of quantum models from femtoseconds to microseconds or longer to emulate realistic synthesis and transport.