1. Kyoto UniversityHong Kong University of Science and Technology Coventor Tutorial Bi-Stable Mechanical Beam Simulation -Material definition -Fabrication (Process flow design) -Layout (Structure design) -Device fabrication (Meshing and Naming Entities) -Analyzer setting (Boundary conditions) -Simulation (Finite State Analysis) -Viewing result

2. Kyoto UniversityHong Kong University of Science and Technology Coventor-Process : Material Deification Change the electric conductivity of Silicon since it was doped. For detailed information on Material Deification, please refer to the Section 2.3 of the manual “ Designer ” ! ! !

3. Kyoto UniversityHong Kong University of Science and Technology Coventor Tutorial Bi-Stable Mechanical Beam Simulation -Material definition -Fabrication (Process flow design) -Layout (Structure design) -Device fabrication (Meshing and Naming Entities) -Analyzer setting (Boundary conditions) -Simulation (Finite State Analysis) -Viewing result

4. Kyoto UniversityHong Kong University of Science and Technology Coventor-Process : Create Substrate For detailed information on editing process, please refer to the Section 2.4 of the manual “ Designer ” ! ! !

5. Kyoto UniversityHong Kong University of Science and Technology Coventor-Process : Oxide Formation

6. Kyoto UniversityHong Kong University of Science and Technology Coventor-Process : Si Formation Only this Si layer for simulation: Accurate “Thickness”!! Si layer for layout: Accurate “Layer Name”!!

7. Kyoto UniversityHong Kong University of Science and Technology Coventor-Process : Si Patterning

8. Kyoto UniversityHong Kong University of Science and Technology Coventor-Process : Metal Formation Metal layer for layout: Accurate “Layer Name”!!

9. Kyoto UniversityHong Kong University of Science and Technology Coventor-Process : Metal Patterning

10. Kyoto UniversityHong Kong University of Science and Technology Coventor Tutorial Bi-Stable Mechanical Beam Simulation -Material definition -Fabrication (Process flow design) -Layout (Structure design) -Device fabrication (Meshing and Naming Entities) -Analyzer setting (Boundary conditions) -Simulation (Finite State Analysis) -Viewing result

11. Kyoto UniversityHong Kong University of Science and Technology Coventor – Create Layout For detailed information on editing layout, please refer to the Section 2.5 & 3.2.1 of the manual “ Designer ” ! ! !

12. Kyoto UniversityHong Kong University of Science and Technology Coventor – Check Layers The layer names are from the pre- defined “Layer Names” in the last Process Editor!!

13. Kyoto UniversityHong Kong University of Science and Technology Coventor – Edit Your Layout Standard drawing tools Edit by input co-ordinate Other useful functions For detailed information on editing layout, please refer to the Section 2.5 & 3 of the manual “ Designer ” ! ! !

14. Kyoto UniversityHong Kong University of Science and Technology Coventor – Edit Your Layout For detailed information on editing layout, please refer to the Section 2.5 & 3 of the manual “ Designer ” ! ! ! For Bended beam: The beam and anchor should be merged. How? Select beam and anchor and then using “boolean- >Or” for merge. Otherwise, solid model can’t be built!! ERROR

15. Kyoto UniversityHong Kong University of Science and Technology Coventor – Finish Layout Two Layers: SILICON !! METAL!!

16. Kyoto UniversityHong Kong University of Science and Technology Coventor – Finish Layout The layout should contains TWO Layers with the names of SILICON & METAL!! The final cell name should be “top cell_Group number”, e.g., “top cell_6a” and “top cell_6b”.

17. Kyoto UniversityHong Kong University of Science and Technology Coventor – Flat Hierarchy Before exporting the layout to top cell, the top cell should be flattened. For detailed information on editing layout, please refer to the Section 2.5.7 of the manual “ Designer ” ! ! !

18. Kyoto UniversityHong Kong University of Science and Technology Coventor – Gds Out Chose a file to output the layout. For detailed information on editing layout, please refer to the Section 2.6.6 of the manual “ Designer ” ! ! !

19. Kyoto UniversityHong Kong University of Science and Technology Coventor Tutorial Bi-Stable Mechanical Beam Simulation -Material definition -Fabrication (Process flow design) -Layout (Structure design) -Device fabrication (Meshing and Naming Entities) -Analyzer setting (Boundary conditions) -Simulation (Finite State Analysis) -Viewing result

20. Kyoto UniversityHong Kong University of Science and Technology Coventor – Initial Solid Model The SILICON is a whole bulk material! Since only SILICON layer is simulated, other can be hided. For detailed information on solid model, please refer to the Section 4.5 of the manual “ Designer ” ! ! !

21. Kyoto UniversityHong Kong University of Science and Technology Coventor – Partition Partition the Si into several parts. (Partition the beam (moved parts) from the anchor (fixed parts). 1.Choose 3 points to generate a plane 2.Choose the plane and the Silicon bulk (needed for partition) 3.“Partition” under “Solid Model” For detailed information on solid model, please refer to the Section 4.5.1 of the manual “ Designer ” ! ! !

22. Kyoto UniversityHong Kong University of Science and Technology Coventor – Partition (After) After partition, one Silicon bulk is cut into two parts. After several times of partition, the beams will be completely separated from the anchor. For detailed information on solid model, please refer to the Section 4.5.1 of the manual “ Designer ” ! ! ! After partition, the plane can be hided. Finally, the one Silicon bulk will be cut into many parts.

23. Kyoto UniversityHong Kong University of Science and Technology Coventor – Add Layer to Mesh Model Select ALL Silicon parts and add them to Mesh Model For detailed information on solid model, please refer to the Section 4.7 of the manual “ Designer ” ! ! !

24. Kyoto UniversityHong Kong University of Science and Technology Coventor – Add Layer to Mesh Model ALL Silicon parts move into Mesh Model For detailed information on Mesh model, please refer to the Section 4.7 of the manual “ Designer ” ! ! !

25. Kyoto UniversityHong Kong University of Science and Technology Coventor – Meshing Settings For detailed information on Mesh model, please refer to the Section 4.7 of the manual “ Designer ” ! ! !

26. Kyoto UniversityHong Kong University of Science and Technology Coventor – Generate Meshing For detailed information on Mesh model, please refer to the Section 4.7 of the manual “ Designer ” ! ! ! Select ALL Silicon parts and Generate Mesh.

27. Kyoto UniversityHong Kong University of Science and Technology Coventor – Finish Meshing

28. Kyoto UniversityHong Kong University of Science and Technology Coventor –Naming Entities For detailed information on Mesh model, please refer to the Section 4.6 of the manual “ Designer ” ! ! ! Name electrodes on the top faces! “Potential” will be applied on these faces.

29. Kyoto UniversityHong Kong University of Science and Technology Coventor –Naming Entities For detailed information on Mesh model, please refer to the Section 4.6 of the manual “ Designer ” ! ! ! Name anchors on the bottom faces! “Fixall” and “Temperature” will be applied on these faces.

30. Kyoto UniversityHong Kong University of Science and Technology Coventor –Naming Entities For detailed information on Mesh model, please refer to the Section 4.6 of the manual “ Designer ” ! ! ! Name the front faces or other needed faces of the actuator, amplifier or bistable beam on the side faces! “Pressure” or “Displacement” will be applied on these faces

31. Kyoto UniversityHong Kong University of Science and Technology Coventor Tutorial Bi-Stable Mechanical Beam Simulation -Material definition -Fabrication (Process flow design) -Layout (Structure design) -Device fabrication (Meshing and Naming Entities) -Analyzer setting (Boundary conditions) -Simulation (Finite State Analysis) -Viewing result

32. Kyoto UniversityHong Kong University of Science and Technology Choose the 2 nd solver Choose your mesh model & then Set the solver Coventor – Solver Setting For detailed information on editing layout, please refer to the Section 3.5 of the manual “ analyzer_standard ” ! ! !

33. Kyoto UniversityHong Kong University of Science and Technology Coventor – Solver Setting

34. Kyoto UniversityHong Kong University of Science and Technology Coventor – Surface Boundary conditions Example: apply voltage to actuator to analysis the temperature, displacement, stress and so on. 1.Fixall for anchor 2.Set the temperate of all anchor as room temperature (300K). The units is “K”. 3.Apply voltage to electrodes. The units is “voltage”. For detailed information on setting boundary conditions, please refer to the Section 3.5.3 of the manual “ analyzer_standard ” ! ! !

35. Kyoto UniversityHong Kong University of Science and Technology Coventor – Surface Boundary conditions For other simulations: 1.“Fixall” and “Temperature” are always applied on anchor faces. 2.“Potential” can be applied on electrode faces. 3.“Pressure” or “Displacement” can be applied on side faces

36. Kyoto UniversityHong Kong University of Science and Technology Coventor – SBCs for Bistable Beam Apply one Displacement to get one Force For detailed information on Simulation methodology of Bistable Beam, please refer to the “ Tutorial on simiulation of bistable beam ” ! ! !

37. Kyoto UniversityHong Kong University of Science and Technology Coventor – Displacement-Force Simulation For simulation, one can not solve an arbitrary displacement directly, according to my experience. Instead, one need to increase the displacement bit by bit from zero, and telling Coventor to start the analysis from the result of the previous one. In this manner, the simulation will not fail easily, because defining the displacement resolves the large non-linearity of buckling.

38. Kyoto UniversityHong Kong University of Science and Technology Coventor – One or Multi Point Simulation 1.Correspond the displacement to a variable, “mechBC1”, based on “MemMech” Solver. 2. Start to set Variable 3. Correspond the “mechBC1” to a Trajectory 3. Set the Trajectory 4. Set the value 5. Run here for simulating a series of values 6. Run here for simulating one value

39. Kyoto UniversityHong Kong University of Science and Technology Coventor – Contact Boundary Conditions Plan: AMP CON2 Plan: BEAM CON Otherwise, they actuator will move across the amplifier, or the amplifier will move across the beam rather than push it. Plan: ACT CON Plan: AMP CON1 If you want to use the actuator to push the amplifier, or use the amplifier to push the beam you need to define the Planes of actuator, amplifier and beam as contact planes.

40. Kyoto UniversityHong Kong University of Science and Technology Coventor Tutorial Bi-Stable Mechanical Beam Simulation -Material definition -Fabrication (Process flow design) -Layout (Structure design) -Device fabrication (Meshing and Naming Entities) -Analyzer setting (Boundary conditions) -Simulation (Finite State Analysis) -Viewing result

41. Kyoto UniversityHong Kong University of Science and Technology Real-time Simulation Progress/health Monitoring Coventor – Simulation

42. Kyoto UniversityHong Kong University of Science and Technology Coventor – View Resluts For detailed information on Visualizer, please refer to the Section 9 of the manual “ analyzer_standard ” ! ! !

43. Kyoto UniversityHong Kong University of Science and Technology Coventor – 3D Result Viewing For detailed information on Visualizer, please refer to the Section 9 & 9.1 of the manual “ analyzer_standard ” ! ! !

44. Kyoto UniversityHong Kong University of Science and Technology Coventor – Simulation Result of the Displace-Fore of Bistable Beam For detailed information on Visualizer, please refer to the Section 9 & 9.4 of the manual “ analyzer_standard ” ! ! ! Checking the displacement deformation using Geometry Scaling

45. Kyoto UniversityHong Kong University of Science and Technology Coventor – Simulation Result of the Displace-Fore of Bistable Beam For detailed information on Visualizer, please refer to the Section 9 & 9.4 of the manual “ analyzer_standard ” ! ! ! Checking the Force Value using Table – rxnForces. Sign of rxnForces changes from + to – or – to +, indicating two stable states.