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반도체 제작 공정 재료공정실험실 동아대학교 신소재공학과 손 광 석 隨處作主立處開眞

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Presentation on theme: "반도체 제작 공정 재료공정실험실 동아대학교 신소재공학과 손 광 석 隨處作主立處開眞"— Presentation transcript:

1 반도체 제작 공정 재료공정실험실 동아대학교 신소재공학과 손 광 석 conan@donga.ac.kr 隨處作主立處開眞

2 전자소자의 발전과정 Materials Processing Laboratory IC or VLSI Transistor
Vacuum tube Materials Processing Laboratory

3 박막형 집적회로 구조 Materials Processing Laboratory

4 Ion implantation(doping)
박막형 집적회로 제작 Oxidation Lithography Etching Diffusion Deposition Epi growth Annealing Ion implantation(doping) Materials Processing Laboratory

5 PVD : Physical Vapor Depostion CVD : Chemical Vapor Deposition
박막 증착 공정 PVD : Physical Vapor Depostion CVD : Chemical Vapor Deposition Thermal evaporation Thermal CVD DC or RF sputtering Low pressure CVD Ion Beam sputtering Plasma enhanced CVD Pulsed Laser Depostion Metal-organic CVD Molecular beam epitaxy Materials Processing Laboratory

6 박막의 특성 Materials Processing Laboratory
Physical properties are no longer same as those of bulk High surface to volume ratio Existence of surface energy states Different crystal structure Different inter-atomic distance Materials Processing Laboratory

7 Evaporation 박막 증착 공정 Materials Processing Laboratory

8 Evaporation 박막 증착 공정 Materials Processing Laboratory

9 Sputter 박막 증착 공정 Materials Processing Laboratory

10 DC sputter 박막 증착 공정 Materials Processing Laboratory

11 RF sputter 박막 증착 공정 Materials Processing Laboratory target - +
substrate + chamber Time Materials Processing Laboratory

12 Magnetron sputter 박막 증착 공정 Materials Processing Laboratory

13 DC&RF Magnetron sputter
박막 증착 공정 Materials Processing Laboratory

14 Ion beam sputter 박막 증착 공정 Materials Processing Laboratory

15 Sputter vs. evaporation
박막 증착 공정 Comparison of evaporation and sputtering EVAPORATION SPUTTERING low energy atoms higher energy atoms high vacuum path few collisions line of sight deposition little gas in film low vacuum, plasma path many collisions less line of sight deposition gas in film larger grain size smaller grain size fewer grain orientations many grain orientations poorer adhesion better adhesion Materials Processing Laboratory

16 Pulsed laser deposition
박막 증착 공정 Materials Processing Laboratory

17 Molecular beam epitaxy
박막 증착 공정 evaporation at very low deposition rates typically in UHV very well controlled grow films with good crystal structure expensive often use multiple sources to grow alloy films deposition rate is so low that substrate temperature does not need to be as high Materials Processing Laboratory

18 PVD Summary 박막 증착 공정 Cost : evaporation < sputtering < PLD < MBE Film quality : evaporation < sputtering < PLD < MBE Growth rate : evaporation > sputtering > PLD > MBE Materials Processing Laboratory

19 Chemical vapor deposition

20 CVD overview (I) 박막 증착 공정 Materials Processing Laboratory
Reacts on substrate to deposit film Not all components are found in all CVD systems Materials Processing Laboratory

21 CVD overview (II) 박막 증착 공정 Materials Processing Laboratory
Types of CVD reactions Pyrolysis – thermal decomposition Reduction Advantages high growth rates possible can deposit materials which are hard to evaporate can grow epitaxial films Disadvantages high temperatures complex processes toxic and corrosive gasses Oxidation Compound formation Disproportionation Reversible transfer Materials Processing Laboratory

22 Low pressure CVD 박막 증착 공정 Materials Processing Laboratory
Gas pressure : 1 mtorr – 1 torr ( < 1 atm ) Lower P => higher D of gas to substrates <Advantages> Better film uniformity Better film coverage over steps Fewer defects Materials Processing Laboratory

23 Plasma enhanced CVD 박막 증착 공정 Materials Processing Laboratory
Plasma breaks up gas molecules Higher reactivity can use lower temperatures can use lower pressures Materials Processing Laboratory

24 MOCVD 박막 증착 공정 Materials Processing Laboratory

25 NMOS transistor 반도체제작공정 예 Materials Processing Laboratory
Thermal oxidation Nitride deposition by LPCVD Active area mask and etching Boron implant Remove nitride and oxide pad Regrow thin gate oxide Boron threshold adjustment implant CVD polysilicon deposition Gate definition Source/drain implantation Source/drain diffusion CVD oxide deposition Contact openings Metal deposition Pattern metal Etch metal Passivation layer deposition Open bonding pads Materials Processing Laboratory


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