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Published byJonah Smith Modified over 9 years ago
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Ion implanter – HV terminal 500 kV a number of Nielsen and RF ion sources for gaseous and solid materials mass analysis better than 1 a.m.u. beam current from 1-100 A, beam scanning system target area up to 5 cm diameter
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2MV Van de Graaff ion accelerator RF source for light ions - H, He and their isotopes RBS – beam line in preparation
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UHV chamber for thin film deposition e-beam or thermal evaporation
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Dual ion miller for TEM specimen preparation Thin film coating unit for SEM sample preparation
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TEM – Philips EM400 120 keV
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TEM – Philips EM400T 120 keV
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SEM – Philips EM500 Oxford Instruments EDAX
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SEM – JEOL 25N with EPMA (e-microprobe)
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ANA HV thin film deposition unit with dual ion beams
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EMA 10 – UHV system Surface analysis - LEIS i SIMS (low energy ion scattering and Secondary ion mass spectroscopy)
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Balzers SPUTTRON II thin film deposition system d.c. and r.f. sputtering, four target elements, raective deposition
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Balzers BAK 550 evaporation system e-beam (four teagles) or thermal evaporation, thickness and deposition rate monitor, programmable four layer deposition, reactive evaporation, residual gas analyzer, flash evaporation
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Talistep – thin film thickness and surface roughness measurements
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