1. Simple piezoresistive pressure sensor

2. Simple piezoresistive accelerometer

3. Simple capacitive accelerometer
C(x)=C(x(a))
Cap wafer
Cap wafer may be micromachined silicon, pyrex, …
Serves as over-range protection, and damping
Typically would have a bottom cap as well.

4. Simple capacitive pressure sensor
C(x)=C(x(P))

5. ADXL50 Accelerometer +-50g Polysilicon MEMS & BiCMOS 3x3mm die
Integration of electronics!

6. ADXL50 Sensing Mechanism
Balanced differential capacitor output
Under acceleration, capacitor plates move changing capacitance and hence output voltage
On-chip feedback circuit drives on-chip force-feedback to re-center capacitor plates (improved linearity).

7. Analog Devices Polysilicon MEMS

8. ADXL50 – block diagram

9. Rotation induces Coriolis acceleration Electrostatic Drive Circuit
MEMS Gyroscope Chip
Digital Output
Proof Mass
Sense Circuit
Rotation induces Coriolis acceleration
Electrostatic Drive Circuit
J. Seeger, X. Jiang, and B. Boser

10. MEMS Gyroscope Chip 1mm Drive 0.01Å Sense
J. Seeger, X. Jiang, and B. Boser

11. Two-Axis Gyro, IMI(Integrated Micro Instruments Inc.)/ADI (fab)

12. Single chip six-degree-of-freedom inertial
measurement unit (uIMU) designed by IMI
principals and fabricated by Sandia National Laboratories

13. TI Digital Micromirror Device

16. NEU/ADI/Radant/MAT Microswitches
Drain
Source
Gate
Beam
Surface Micromachined
Post-Process Integration with CMOS
V Electrostatic Actuation
~100 Micron Size
Drain
Gate
Source
Beam
SEM of NEU microswitch
Feedthrough
Dielectric
Seal
ring
Microbump
Landing
Package Substrate
MEMS
MAT Microswitch

17. Contact Detail
Contact End of Switch

18. Spectrometer cross-section
Surface Micromachined
Spring System
Electrostatic
Actuator Plates
4/21/2017

19. Fabricated Microspectrometers
4/21/2017

20. Intensity vs. Wavelength
l = 575nm
FWHM = 30nm
RP = 20
l =515 nm
FWHM = 25nm
RP = 21
l =625nm
FWHM = 39nm
RP = 16 21

21. Packaged Plasma Source
Top View
Die in Hybrid Package
Side View

22. Fabrication
SEM of Interdigitated
Capacitor Structure

23. Optical MEMS Vibration Sensors
Uniform cantilever beam
Foster Miller - Diaphragm
Cantilevered paddle
Cantilevered supported diaphragm

24. Optically interrogated MEMS sensors
55 mm length cantilevered paddle after 7 hours of B.O.E. releasing and lifted up with a 1mm probe (~0.35mm thick, 2mm gap)

25. Courtesy Connie Chang-Hasnain

26. Courtesy Connie Chang-Hasnain

27. Micromachining Ink Jet Nozzles
Microtechnology group, TU Berlin

28. (UCLA, Fan)

29. (Gruning)

30. Gene chips, proteomics arrays.

43. NEMS: TOWARD PHONON COUNTING: Quantum Limit of Heat Flow.
Roukes
Group
Cal Tech
Tito

44. From Ashcroft and
Mermin, Solid
State Physics.

45. Other: NSF-Funded NSEC, Center for High-Rate Nanomanufacturing (CHN): High-rate Directed Self-Assembly of Nanoelements
Proof of Concept Testbed
Nanotube Memory Device
Partner: Nantero first to make memory devices using nanotubes
Properties: nonvolatile, high speed at <3ns, lifetime (>1015 cycles), resistant to heat, cold, magnetism, vibration, and cosmic radiation.
Nanotemplate:
Layer of assembled nanostructures transferred to a wafer. Template is intended to be used for thousands of wafers.

46. Switch Logic, 1996, Zavracky, Northeastern
Inverter
NOR Gate

47. Simple Carbon Nanotube Switch
Diameter: 1.2 nm
Elastic Modulus: 1 TPa
Electrostatic Gap: 2 nm
Binding Energy to Substrate: 8.7x10-20 J/nm
Length at which adhesion = restoring force: 16 nm
Actuation Voltage at 16 nm = 2 V
Resonant frequency at 16 nm = 25 GHz
Electric Field = 109 V/m or 107 V/cm + Geom.
(F-N tunneling at > 107 V/cm)
Stored Mechanical Energy (1/2 k x2 ) = 4 x J = 2.5 eV
4 x = ½ CV2 gives C = 2 x << electrode capacitance!
Much more energy stored in local electrodes than switch.

49. Biological Nanomotor