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1 TD26_CC_SiC 06-September-2011 Assembly procedure of TD26_CC_SiC F. Rossi.

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Presentation on theme: "1 TD26_CC_SiC 06-September-2011 Assembly procedure of TD26_CC_SiC F. Rossi."— Presentation transcript:

1 fabrizio.rossi@cern.ch 1 TD26_CC_SiC fabrizio.rossi@cern.ch 06-September-2011 Assembly procedure of TD26_CC_SiC F. Rossi

2 fabrizio.rossi@cern.ch 2 TD26_CC_SiC INTRODUCTION ACCELERATING STRUCTURE PETS Vacuum flange Manifold RF flange and waveguide Wakefield monitor Cooling circuit Interconnection bellow AS Damping load 500 mm 220 mm REQUIREMENTS COAXILITY ERROR: < 10 µm ALIGNMENT ERROR BETWEEN MANIFOLDS AND DISKS STACK: ±10 µm REQUIREMENTS COAXILITY ERROR: < 10 µm ALIGNMENT ERROR BETWEEN MANIFOLDS AND DISKS STACK: ±10 µm ON-OFF mechanism Vacuum flange RF flange Coupler Cooling circuit Octant with damping material Frictional contact Frictional contact EBW REQUIREMENTS COAXILITY ERROR: < 25 µm REQUIREMENTS COAXILITY ERROR: < 25 µm

3 fabrizio.rossi@cern.ch 3 TD26_CC_SiC INTRODUCTION Main technologies involved in the assembly procedure:  Bonding (atmosphere: H 2, temperature: ~1000 °C)  Brazing (atmosphere: H 2 or vacuum, temperature: ~1000 °C, brazing alloy: AuCu or AgCu)  EBW  (Laser welding)

4 fabrizio.rossi@cern.ch 4 TD26_CC_SiC STEPS (1) MACHINING (1) MACHINING (3) CLEANING 1.Etching with SLAC solutionEtching with SLAC solution 2.Degreasing + deoxidation + passivationDegreasing + deoxidation + passivation (3) CLEANING 1.Etching with SLAC solutionEtching with SLAC solution 2.Degreasing + deoxidation + passivationDegreasing + deoxidation + passivation (4) H 2 DIFFUSION BONDING (1040 °C) 1.Disks stack (x2)Disks stack (x2) (4) H 2 DIFFUSION BONDING (1040 °C) 1.Disks stack (x2)Disks stack (x2) (2) QUALITY CONTROL 1.Inlet inspectionInlet inspection 2.Dimensional controlDimensional control 3.SEMSEM 4.Preliminary RF testsPreliminary RF tests (2) QUALITY CONTROL 1.Inlet inspectionInlet inspection 2.Dimensional controlDimensional control 3.SEMSEM 4.Preliminary RF testsPreliminary RF tests (5) H 2 BRAZING (Au/Cu 25/75, 1040 °C) 1.Manifold cover (x2)Manifold cover (x2) 2.WFM (x4)WFM (x4) 3.Waveguides (x8)Waveguides (x8) 4.Cooling system (x8)Cooling system (x8) (5) H 2 BRAZING (Au/Cu 25/75, 1040 °C) 1.Manifold cover (x2)Manifold cover (x2) 2.WFM (x4)WFM (x4) 3.Waveguides (x8)Waveguides (x8) 4.Cooling system (x8)Cooling system (x8) (6) MACHINING 1.Waveguides (x8)Waveguides (x8) (6) MACHINING 1.Waveguides (x8)Waveguides (x8) (7) CLEANING 1.Degreasing + deoxidation + passivationDegreasing + deoxidation + passivation (7) CLEANING 1.Degreasing + deoxidation + passivationDegreasing + deoxidation + passivation (8) H 2 BRAZING (Au/Cu 25/75, 1040 °C) 1.Vacuum manifolds (x6)Vacuum manifolds (x6) (8) H 2 BRAZING (Au/Cu 25/75, 1040 °C) 1.Vacuum manifolds (x6)Vacuum manifolds (x6) (9) H 2 BRAZING (Au/Cu 35/65, 1020 °C) 1.4 vacuum manifolds + 1 disks stack + 1 interconnection flange + 8 steel inserts + tuning studs (x2)4 vacuum manifolds + 1 disks stack + 1 interconnection flange + 8 steel inserts + tuning studs (x2) (9) H 2 BRAZING (Au/Cu 35/65, 1020 °C) 1.4 vacuum manifolds + 1 disks stack + 1 interconnection flange + 8 steel inserts + tuning studs (x2)4 vacuum manifolds + 1 disks stack + 1 interconnection flange + 8 steel inserts + tuning studs (x2) (11) H 2 BRAZING (Au/Cu 50/50, 980 °C) 1. 2 accelerating structures (11) H 2 BRAZING (Au/Cu 50/50, 980 °C) 1. 2 accelerating structures (15) VACUUM BAKING (650 °C, 10 days) (15) VACUUM BAKING (650 °C, 10 days) (14) RF CHECK AND TUNING (14) RF CHECK AND TUNING (16) CONDITIONING (16) CONDITIONING (10) QUALITY CONTROL 1.Vacuum testVacuum test 2.Cooling circuit testCooling circuit test (10) QUALITY CONTROL 1.Vacuum testVacuum test 2.Cooling circuit testCooling circuit test (12) EBW 1.Covers and vacuum flangesCovers and vacuum flanges (12) EBW 1.Covers and vacuum flangesCovers and vacuum flanges (13) QUALITY CONTROL 1.Vacuum testVacuum test (13) QUALITY CONTROL 1.Vacuum testVacuum test

5 fabrizio.rossi@cern.ch 5 TD26_CC_SiC WORKFLOW: AS 1 5. H 2 brazing (AuCu 25/75, 1040 °C) 5. H 2 brazing (AuCu 25/75, 1040 °C) 8. H 2 brazing (AuCu 25/75, 1040 °C) 8. H 2 brazing (AuCu 25/75, 1040 °C) 6. Machining 7. Cleaning 10. QC 4. H 2 bonding (1040 °C) 4. H 2 bonding (1040 °C) 9. H 2 brazing (AuCu 35/65, 1020 °C) 9. H 2 brazing (AuCu 35/65, 1020 °C) Disks stack Waveguide Manifold WFM Manifold Manifold cover 1.Vacuum test 2.Cooling circuit test 1.Vacuum test 2.Cooling circuit test

6 fabrizio.rossi@cern.ch 6 TD26_CC_SiC WORKFLOW: AS 2 5. H 2 brazing (AuCu 25/75, 1040 °C) 5. H 2 brazing (AuCu 25/75, 1040 °C) 6. Machining 7. Cleaning 4. H 2 bonding (1040 °C) 4. H 2 bonding (1040 °C) Disks stack Waveguide Manifold Manifold cover 8. H 2 brazing (AuCu 25/75, 1040 °C) 8. H 2 brazing (AuCu 25/75, 1040 °C) 10. QC 9. H 2 brazing (AuCu 35/65, 1020 °C) 9. H 2 brazing (AuCu 35/65, 1020 °C) 1.Vacuum test 2.Cooling circuit test 1.Vacuum test 2.Cooling circuit test

7 fabrizio.rossi@cern.ch 7 TD26_CC_SiC WORKFLOW 12. EBW 11. H 2 brazing (AuCu 50/50, 980 °C) 11. H 2 brazing (AuCu 50/50, 980 °C) 13. QC 1.Vacuum test

8 fabrizio.rossi@cern.ch 8 TD26_CC_SiC ASSEMBLY PROCEDURE CLIC’s requirements shape accuracy: ± 2.5 µm roughness Ra: 0.025 µm 1. MACHINING DIAMOND TOOLS Low coefficient of friction and smoothness High thermal conductivity Low compressibility Low thermal expansion Dimensional stability About 7 tools are necessary to machine each disk Hybrid turn/mill machine

9 fabrizio.rossi@cern.ch 9 TD26_CC_SiC ASSEMBLY PROCEDURE 2. QUALITY CONTROL The inspection takes place in specific room, with all the important issues (clean air, gloves, shoes with gloves, specific glasses and specific machines), in order to check the surface for scratches, dents, pits, cracks. The pieces are also organized in photo archives. If parts are not clean enough, cleaning procedure should be done again. If parts are not clean, measurement can’t be done because any oil or dust could have an influence on measurement machines. Inlet inspection Dimensional control CERN workshop metrology laboratory Class 1 according to VDE/VDI 2627 standard Reference temperature: 20 °C Temperature gradients: 0.2 K/hour, 0.4 K/day, 0.1 K/meter Conditioner with high accuracy of temperature and humidity control (± 0.5 K) Filters needed to prevent dust in the dimensional control room Vibrations control SEM analysis Identify the machining quality (machining marks, burrs) and the general surface quality (contaminations, handling marks, faceting) before operation at high power. Characterize the surface (craters, smoothening, waves, peaks, projections, oxidation). New Leitz PMM-C Infinity Dimensional control of disks Accuracy: ±(0.3 + L/1000) μm Pieces up to 1.2 m Probe head has adjustable force (0.02-0.26 N) VEECO Roughness and flatness measurements Uses white light, lens and CCD camera Two hours to measure  80 mm disk and two hours to process the images

10 fabrizio.rossi@cern.ch 10 TD26_CC_SiC 9.Etching with SLAC solution Concentration: o phosphoric acid: 70 % o nitric acid: 23.3 % o acetic glacial acid: 6.6 % o hydrochloric acid: 0.49 % Temperature: room Time:  5 seconds for turning (etching of about 0.6 µm)  30 seconds for turning and milling 10.Rising with water jet 11.Immersion in demineralised water, removal of the screws, rinsing of the holes using a syringe and fixing of the support clip and the hook 12.Final rinsing with demineralised water and ultrasounds, followed by rinsing with ethylic alcohol and ultrasounds Temperature : 30 °C Time : ~ 1 minute 13.Drying with nitrogen 14.Drying in an oven Temperature: 60 °C Time: ~ 5 minutes 15.Drying with nitrogen 16.Packaging with tissue paper ASSEMBLY PROCEDURE 3. CLEANING (FOR BONDING) 1.Unpacking, visual inspection, fixing of the support clip 2.Degreasing with solvents Topklean MC 20A and Promosolv 71IPA This treatment is repeated twice if there are more than two blind holes. After the first degreasing the piece is removed from the basket and it put onto tissue paper. The support clip is removed and is then inserted into the other holes. The disk is placed in the basket and is degreased for the second time. 3.Removal of the support clip, drying the blind holes with nitrogen, packaging with tissue paper for transport to a different area. 4.Unpacking. If there are any blind threaded holes, these have screws inserted to prevent acid ingression. A hook is then fixed to the screw. 5.Degreasing with detergent NGL 17.40 spec. ALU III and ultrasounds Concentration: 10 g/l Temperature: 50 °C Time: 10 – 15 minutes 6.Rising with water jet and by immersion. 7.Pickling (deoxidation) with hydrochloric acid. Concentration: 50 % Temperature: room Time: ~ 1 minute 8.Rising with water jet and by immersion.

11 fabrizio.rossi@cern.ch 11 TD26_CC_SiC ASSEMBLY PROCEDURE 4. H 2 DIFFUSION BONDING (1040 °C) PRE-ASSEMBLY STRAIGTHNESS MEASUREMENTS Once the assembly procedure is completed, straightness measurements are performed using the Mitutoyo Linear Height LH-600. The measurements are done with the accelerating structure on the V- support and considering two reference lines, called REF A and REF B. The measurement is done before and after transport to the oven and they are organized in charts. Accuracy of V-shape column: ± 1.5 µm REF A REF B Mitutoyo Linear Height LH-600 Measuring range: 0-972 mm Resolution: 0.1 µm Accuracy: (1.1+0.6L[mm]/600) µm Measuring force: 1N

12 fabrizio.rossi@cern.ch 12 TD26_CC_SiC ASSEMBLY PROCEDURE 4. H 2 DIFFUSION BONDING (1040 °C) TRANSPORT TO FURNACE 1. Load (0.28 MPa) is applied to the disks stack using the load device and thermocouples are mounted to measure the temperature history during the heat treatment. 3. Bonded disks stack4. Particular of the grains aspect after the heat treatment. Grains size order of few millimeters. 2. Bonding inside the furnace: atmosphere: H 2 temperature: 1040 °C Before each bonding cycle, a outgassing cycle is performed. LOAD APPLICATION

13 fabrizio.rossi@cern.ch 13 TD26_CC_SiC ASSEMBLY PROCEDURE 5. H 2 BRAZING (Au/Cu 25/75, 1040 °C) 6. MACHINING Waveguides are machined with reference to RF flanges dimensions, in order to achieve a clearance of 0.02-0.06 mm between the two surfaces where the brazing alloy will flow and create the joint. Graphite plate Ceramic support Ceramic plate WEIGHT Brazing wire groove (Au/Cu 25/75)

14 fabrizio.rossi@cern.ch 14 TD26_CC_SiC ASSEMBLY PROCEDURE 9. H 2 BRAZING (Au/Cu 35/65, 1020 °C) Rod Nut Lower plate Lateral support Lateral spring Lateral plate Upper support Upper spring Wedges Upper spring (graphite): apply a vertical force on the manifolds through the upper support and allow thermal expansion of the assembly during the brazing cycle. Rod (stainless steel): connect upper support and lower plate. Lower plate (graphite): support the assembly during alignment operations and brazing cycle. Wedges (ceramic): allow small adjustment of manifolds in the vertical direction. Lateral springs (graphite): apply an horizontal force to the manifolds through the lateral plates and allow thermal expansion of the assembly during the brazing cycle. Lateral supports (stainless steel): support the springs.

15 fabrizio.rossi@cern.ch 15 TD26_CC_SiC ASSEMBLY PROCEDURE 10. H 2 BRAZING (Au/Cu 50/50, 980 °C) Ceramic Inox plate Ceramic Inox plate 3 DOF 1 st structure2 nd structure and measurement Auxiliary frameAlignment Tooling ready for transport to furnace TOOLING Mitutoyo Linear Height LH-600

16 fabrizio.rossi@cern.ch 16 TD26_CC_SiC ASSEMBLY PROCEDURE 12. EBW Cover Small cover Vacuum flange EBW machine (CERN workshop) EBW machine chunk TOOLING

17 fabrizio.rossi@cern.ch 17 TD26_CC_SiC ASSEMBLY PROCEDURE 13. QUALITY CONTROL Vacuum test 14. RF CHECK AND TUNING After bonding and brazing processes, accelerating structures must be tuned to compensate the different assembly errors. Tuning is performed modifying by plastic deformation the cell walls and checking, at the same time, the results of this operation by means of a network analyser. Plastic deformation is achieved by pushing or pull the tuning studs brazed in the accelerating structure. Leak detector and Helium are used for vacuum tests. Helium is pumped around the accelereting structure and if a leak is present is detected by the machine.

18 fabrizio.rossi@cern.ch 18 TD26_CC_SiC ASSEMBLY PROCEDURE 15. VACUUM BAKING (650 °C, 10 days) 16. CONDITIONING Muffle Accelerating structure Tooling The accelerating structure is positioned inside a container with a protective atmosphere (N 2 ) to prevent copper oxidation.

19 fabrizio.rossi@cern.ch 19 TD26_CC_SiC CONCLUSIONS Requirements for disks machining are very strict (shape accuracy: ± 2.5 µm, roughness Ra: 0.025 µm) These requirements should be preserved after each step of the assembly procedure Toolings are necessary to fulfill these accuracy needs during the different steps Nevertheless, assembly errors are present at the end and the final RF tuning of the accelerating structure is performed to compensate them.  Main critical issues:  Alignment of manifolds and AS for brazing  Residual deformations after heat treatments at ~ 1000 °C

20 fabrizio.rossi@cern.ch 20 TD26_CC_SiC PROPOSALS Mectalent Manufacturing of toolings for brazing and EBW. For what regards brazing, a close collaboration with Loval is required. Timetable: April 2012. Loval Furnaces will be adapted to perform H 2 brazing at 25 mbar. In the meantime, brazing tests can be done for those components for which H 2 atmosphere is not mandatory (like cooling circuits, waveguides, WFM). Timetable: mid of 2012

21 fabrizio.rossi@cern.ch 21 TD26_CC_SiC THANKS G. Riddone A. Samoshkin (Engineering design) P. Piirainen (Engineering design) A. Solodko (Engineering design) S. Lebet (Assembly and brazing) S. Atieh (Machining) A. Olyunin (Quality control) M. Malabaila (Cleaning) J. Shi (RF check and tuning)

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