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GOOD MORNING.

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Presentation on theme: "GOOD MORNING."— Presentation transcript:

1 GOOD MORNING

2 TECHNOLOGY THAT IS DRIVING THE WORLD VLSI AND ASIC DESIGN
VERY LARGE SCALE INTEGRATED CIRCUIT AND APPLICATION SPECIFIC INTEGRATED CIRCUIT DESIGN © R.Lamsal

3 DEVELOPMENT IN INTEGRATED CIRCUIT TECHNOLOGY
SMALL SCALE INTEGRATION SSI < 10 TRANSISTORS 10 TO 100 TRANSISTORS MEDIUM SCALE INTEGRATION MSI LARGE SCALE INTEGRATION LSI 100 TO 1,000 TRANSISTORS VERY LARGE SCALE INTEGRATION VLSI MORE THAN 1000 TO MILLION OF TRANSISTORS ULTRA VLSI © R.Lamsal

4 VLSI DESIGN CYCLE Design specification HDL CAPTURE RTL SIMULATION
NETLIST GENERATION IMPLEMENTATION IN FPGA PLACEMENT,ROUTING POSTLAYOUT SIMULATION,MASKING PACKAGING © R.Lamsal

5 VLSI DESIGN DOMAINS ALGORITHM PROCESSORS DATA PATH; ALU,REGISTERS
Behavioral Structural Physical 1 2 3 ALGORITHM PROCESSORS DATA PATH; ALU,REGISTERS RTL (HDL) LOGIC TRANSISTOR TRANSISTOR CELL. CHIP,MODULE BOARD,SYSTEM © R.Lamsal

6 HDL incorporates timing feature to represent real hardware.
Introduction to HDL Hardware descriptive languages are used purely to describe the digital circuits in various level of abstraction ranging from gate to board and system level. HDL differs from conventional HLL in the sense they make use of concurrency however sequential option is also provided. HDL incorporates timing feature to represent real hardware. © R.Lamsal

7 AND GATE C<=A AND B after propagation delay; A C Some delay occurs
To pass the input Signal at the output A C B C<=A AND B after propagation delay; © R.Lamsal

8 Transistor representation of And gate
Delay occurs due to RC effect of the transistor. VDD C B A Acts as a capacitor © R.Lamsal

9 Placement TYPE1 Cell A Cell C Cell B Cell D Cell E Cell F © R.Lamsal

10 PLACEMENT TYPE2 Cell B Cell F Cell A Cell C Cell D Cell E © R.Lamsal

11 ROUTING Cell A Cell C Cell B Cell D Cell F Cell E © R.Lamsal

12 Nmos transistor gate source Drain © R.Lamsal

13 FABRICATION OF NMOS TRANSISTOR
BASE SILICON SIO2 ADDED AT THE TOP PHOTOMASKING AND UV RAYS Polysilicon and diffusion To create base source and drain region Metaliziation © R.Lamsal

14 IMPORTANT PARAMETERS TO BE CONSIDERED WHILE DESIGINING THE CHIP.
1. POWER 2.SPEED 3.AREA © R.Lamsal

15 EXAMPLE FULL ADDER FULL ADDER A CARRYOUT B SUM CIN © R.Lamsal

16 TRUTH TABLE A B CIN SUM CARRYOUT Sum<= A XOR B XOR CIN ;
Sum<= A XOR B XOR CIN ; Carry<= (A AND B) OR ( A AND CIN) OR (B AND CIN) ; © R.Lamsal

17 VHDL DESCRIPTION library IEEE; use IEEE.STD_LOGIC_1164.ALL;
use IEEE.STD_LOGIC_ARITH.ALL; use IEEE.STD_LOGIC_UNSIGNED.ALL; entity fulladder1 is Port ( a : in std_logic; b : in std_logic; cin : in std_logic; CARRYout : out std_logic; SUM : out std_logic); end fulladder1; architecture Behavioral of fulladder1 is begin SUM<=a xor b xor cin; CARRYOUT<=(a and b )or (a and cin) or (b and cin); end Behavioral; © R.Lamsal

18 SIMULATION WAVE © R.Lamsal

19 LIST TABLE © R.Lamsal

20 RTL SCHEMETIC © R.Lamsal

21 SYNTHESIS © R.Lamsal

22 © R.Lamsal


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