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Memory Sephiroth Kwon GRMA 26-05-2009.

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Presentation on theme: "Memory Sephiroth Kwon GRMA 26-05-2009."— Presentation transcript:

1 Memory Sephiroth Kwon GRMA

2 Outline Introduction DDR II DDR III Repair Flow Chart Repair Technique

3 Introduction North Bridge CPU Main Clock Gen. Type 1 Type 2
Memory Module CPU Type 1 Type 2

4 DDR II

5 DDR2 DDR2 SDRAM (Double Data Rate Two Synchronous Dynamic Random Access Memory) DDR2 modules use a 1.8V power supply DDR2 has 240 pins

6 DDR2

7 DDR3 DDR3 SDRAM(Double Data Rate Three Synchronous Dynamic Random Access Memory) DDR3 SDRAM improves on DDR2 SDRAM in several significant ways: Higher bandwidth due to increased clock rate Reduced power consumption due to 90nm fabrication technology Pre-fetch buffer is doubled to 8 bits to further increase performance The voltage of DDR3 SDRAM DIMM's was lowered from 1.8V to 1.5V. This reduces power consumption and heat generation, as well as enabling more dense memory configurations for higher capacities.

8 DDR3

9 Repair Flow Chart START Visual Inspection
check memory slot is no bent pin or damaged. Measure memory Voltage Measure memory DQ / Address,RAS#,CAS#,WE# Measure memory Clock Change NB Change any damaged memory slot Check memory Voltage 1.5V (1.8 or 3V) dual & Vtt Check memory CLK 100/133/166..Mhz Compare with good MB, trace NG signal Fix any trace open or resistor damaged Fix any trace or RLC damaged, change NG CLK Generator Fix any voltage regulator or small inductor../trace open Finished OK NG

10 Repair Technique-Visual Inspection
Visual Inspection to check memory slot is not damaged or bent pin inside. 1

11 Repair Technique-Measure Memory Voltage
Use Multi-Meter or Oscilloscope to measure Memory Voltage. 2-1 2-2 Memory Voltage: DDR2: 1.8 Dual, 0.8Vtt_DDR DDR3: 1.5 Dual,

12 Repair Technique-Measure Memory Clock
Use Oscilloscope to measure Memory Clock (100Mhz or 133Mhz, 166Mhz…depends on different chipset & memory) 3-1 3-2

13 Repair Technique-Measure Memory Signals
Plug Memory measure card into slot. Use Multi-Meter to measure memory signals’ bias voltage value. Compare with good MB if you find any unusual. 4-1

14 Thank You!


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