Presentation is loading. Please wait.

Presentation is loading. Please wait.

Electronic devices and circuits

Similar presentations


Presentation on theme: "Electronic devices and circuits"— Presentation transcript:

1 Electronic devices and circuits
UNIT – I PN- DIODE 4/16/2017

2 SEMICONDUCTOR DIODE Theory of p-n junction p-n junction as diode
p-n diode currents Volt-amp characteristics Diode resistance Temperature effect of p-n junction Transition and diffusion capacitance of p-n diode Diode switching times 4/16/2017

3 Theory of p-n junction When a p-type semiconductor material is suitably joined to n-type semiconductor the contact surface is called a p-n junction. P N + + Depletion region 4/16/2017

4 p-n junction as diode The p-n junction is also called as semiconductor diode . The left side material is a p-type semiconductor having –ve acceptor ions and +vely charged holes. The right side material is n-type semiconductor having +ve donor ions and free electrons 4/16/2017

5 p-n junction as diode Suppose the two pieces are suitably treated to form pn junction, then there is a tendency for the free electrons from n-type to diffuse over to the p-side and holes from p-type to the n-side . This process is called diffusion The left side material is a p-type semiconductor having –ve acceptor ions and +vely charged holes. The right side material is n-type semiconductor having +ve donor ions and free electrons. 4/16/2017

6 p-n junction as diode As the free electrons move across the junction from n-type to p-type, +ve donor ions are uncovered. Hence a +ve charge is built on the n-side of the junction. At the same time, the free electrons cross the junction and uncover the –ve acceptor ions by filling in the holes. Therefore a net –ve charge is established on p-side of the junction. 4/16/2017

7 p-n junction as diode When a sufficient number of donor and acceptor ions is uncovered further diffusion is prevented. Thus a barrier is set up against further movement of charge carriers. This is called potential barrier or junction barrier Vo. The potential barrier is of the order of 0.1 to 0.3V. Note: outside this barrier on each side of the junction, the material is still neutral. Only inside the barrier, there is a +ve charge on n-side and –ve charge on p-side. This region is called depletion layer. 4/16/2017

8 p-n diode currents Diode current equation
The current in a diode is given by the diode current equation I = I0 ( e V/ηVT –1) Where, I diode current I reverse saturation current V diode voltage η semiconductor constant =1 for Ge, 2 for Si. VT Voltage equivalent of temperature= T/11,600 (Temperature T is in Kelvin) Note----- If the temperature is given in 0C then it can be converted to Kelvin by the help of following relation, 0C+273 = K 4/16/2017

9 Volt-amp characteristics
diode V IF(mA) Break over Voltage VR VF Knee voltage 4/16/2017 IR(μA )

10 Volt-amp characteristics
The supply voltage V is a regulated power supply, the diode is forward biased in the circuit shown. The resistor R is a current limiting resistor. The voltage across the diode is measured with the help of voltmeter and the current is recorded using an ammeter. By varying the supply voltage different sets of voltage and currents are obtained. By plotting these values on a graph, the forward characteristics can be obtained. It can be noted from the graph the current remains zero till the diode voltage attains the barrier potential. For silicon diode, the barrier potential is 0.7 V and for Germanium diode, it is 0.3 V. The barrier potential is also called as knee voltage or cur-in voltage. 4/16/2017

11 Diode equivalent circuit
It is generally profitable to replace a device or system by its equivalent circuit. Once the device is replaced by its equivalent circuit, the resulting network can be solved by traditional circuit analysis technique. VF switch rf Vo VF 4/16/2017

12 Diode resistance Static Resistance Dynamic Resistance
Forward Resistance Rf Reverse Resistance Rr Dynamic Resistance Forward Resistance rf Reverse Resistance rr 4/16/2017

13 Temperature effect of p-n junction
The current in a diode is given by the diode current equation I = I0( e V/ηVT –1) Where, I diode current I reverse saturation current V diode voltage η semiconductor constant =1 for Ge, 2 for Si. VT Voltage equivalent of temperature= T/11,600 (Temperature T is in Kelvin) Note----- If the temperature is given in 0C then it can be converted to Kelvin by the help of following relation, 0C+273 = K 4/16/2017

14 HALFWAVE RECTIFIER 4/16/2017

15 HALFWAVE RECTIFIER The primary of the transformer is connected to ac supply. This induces an ac voltage across the secondary of the transformer. During the positive half cycle of the input voltage the polarity of the voltage across the secondary forward biases the diode. As a result a current IL flows through the load resistor, RL. The forward biased diode offers a very low resistance and hence the voltage 4/16/2017

16 HALFWAVE RECTIFIER Drop across it is very small. Thus the voltage appearing across the load is practically the same as the input voltage at every instant. During the negative half cycle of the input voltage the polarity of the secondary voltage gets reversed. As a result, the diode is reverse biased. Practically no current flows through the circuit and almost no voltage is developed across the resistor. All input voltage appears across the diode itself. 4/16/2017

17 HALFWAVE RECTIFIER Hence we conclude that when the input voltage is going through its positive half cycle, output voltage is almost the same as the input voltage and during the negative half cycle no voltage is available across the load. This explains the unidirectional pulsating dc waveform obtained as output. The process of removing one half the input signal to establish a dc level is aptly called half wave rectification. 4/16/2017

18 HALFWAVE RECTIFIER Peak Inverse Voltage
When the input voltage reaches its maximum value Vm during the negative half cycle the voltage across the diode is also maximum. This maximum voltage is known as the peak inverse voltage. Thus for a half wave rectifier Let Vi be the voltage to the primary of the transformer. Vi is given by where Vr is the cut-in voltage of the diode. 4/16/2017

19 Half wave waveform 4/16/2017

20 HALFWAVE RECTIFIER Ripple Factor
Ripple factor is defined as the ratio of rms value of ac component to the dc component in the output. Ripple factor 4/16/2017

21 HALFWAVE RECTIFIER The ripple is 4/16/2017

22 HALFWAVE RECTIFIER Vav the average or the dc content of the voltage across the load is given by 4/16/2017

23 HALFWAVE RECTIFIER RMS voltage at the load resistance can be calculated as 4/16/2017

24 HALFWAVE RECTIFIER Ripple Factor 4/16/2017

25 HALFWAVE RECTIFIER Efficiency Efficiency, is the ratio of the dc output power to ac input power 4/16/2017

26 Full Wave Bridge Rectifier
4/16/2017

27 The waveform of fullwave rectifier is
4/16/2017

28 Zener Diode Zener Diode : Works in the break down region when subjected to reverse bias. Large variation in current. Voltage almost constant. Used for voltage regulation. Upper limit of current depends on the power dissipation rating of the device. 4/16/2017

29 Zener Diode Zener diode 4/16/2017

30 Light Emitting Diode Light emitting diodes (LEDs)
The Light Emitting Diode (LED) is a common light source used in electronic circuits. LED is a semiconductor diode that emits light when current passes through it. 4/16/2017

31 The circuit symbol is of light emmitting Diode is
4/16/2017

32 The characteristics of the LED are similar to other semiconductor diodes except the operating
voltage is higher. A typical LED has an operating voltage of 2.0V and a maximum current of 30mA. 4/16/2017

33 the value for the resistor (R) will be 150W.
When the LED is to be operated from a circuit voltage supply, a resistor will be required in series with the LED to ensure the correct current and voltage for the LED. Consider an LED operating from a +5V power supply and has 20mA flowing through it ….. the value for the resistor (R) will be 150W. 4/16/2017

34 LIQUID CRYSTAL DISPLAY
LIQUID CRYSTAL DISPLAY - They are used for display of numeric and alphanumeric character in dot matrix and segmental display. 4/16/2017

35 What is a Liquid Crystal?
Liquid Crystal – a stable phase of matter characterized by anisotropic properties without the existence of a 3-dimensional crystal lattice – generally lying between the solid and isotropic (“liquid”) phase. 4/16/2017

36 There are 2 basic phases Smectic Nematic 4/16/2017

37 Liquid Crystal Model 4/16/2017

38 Series voltage regulator
In a voltage regulator circuit , if the control elements are connected in series with load it is called series voltage regulator . 4/16/2017

39 Series voltage regulator
4/16/2017

40 Zener diode is a diode that block current until a specified voltage is applied. Remember also that the applied voltage is called the breakdown, or Zener voltage. Zener diodes are available with different Zener voltages. When the Zener voltage is reached, the Zener diode conducts from its anode to its cathode (with the direction of the arrow). In this voltage regulator, Q1 has a constant voltage applied to its base. 4/16/2017

41 This voltage is often called the reference voltage
This voltage is often called the reference voltage. As changes in the circuit output voltage occur, they are sensed at the emitter of Q1 producing a corresponding change in the forward bias of the transistor. In other words, Q1 compensates by increasing or decreasing its resistance in order to change the circuit voltage division. 4/16/2017

42 V-I Characteristics of Zener Diode
4/16/2017

43 V-I Characteristics of Zener Diode
Zener diodes are manufactured to have a very low reverse bias breakdown voltage Since the breakdown at the zener voltage is so sharp, these devices are often used in voltage regulators to provide precise voltage references. The actual zener voltage is device dependent. For example, you can buy a 6V zener diode. 4/16/2017

44 THANK U 4/16/2017


Download ppt "Electronic devices and circuits"

Similar presentations


Ads by Google