1. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Consortium for Metrology of Semiconductor Nanodefects Semi-Annual Research Review 20-21 July 2000

2. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Highlights (1999-2000)  5 active graduate students, 4 undergrads  Michael Jordan and Ping Ding receive Ph.D.  DDSURF continued development, Technology Transfer Workshop IV  Film capability added to DDSURF  5 Technical Papers  SRC Project on Hybrid-Emission Defect Instrument Funded ($100k/yr for 3 years)

3. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Tracking Consortium Graduates

4. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Member Organizations ADE/ADE Optical AMD Applied Materials Duke Scientific Inspex/Hamamatsu KLA-Tencor *cumulative 1996-2000, current members are boldface Lawrence Livermore Labs OSI Inc. Intel SEMATECH Sumitomo Sitix VLSI Standards

5. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Recently Completed Projects  Silicon Defects and Optical Wafer Inspection Systems  Scatterometer Enhancements  Light Scattering by Particles/Defects on CMP Wafers

6. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Silicon Defects and Optical Wafer Inspection Systems  Process for Fabrication of Standard Pyramidal Pits in Si  Artifacts Fabricated, Characterized, and Used in Scattering Experiments  Scattering Model Comparison

7. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Pyramidal Pit (0.53 µm) in Si

8. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering In-plane, Differential Scatter of Pyramidal Pits in Si s-polarization incidence angle 65° wavelength 0.6328 µm

9. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering In-plane, Differential Scatter of 0.34  m Pyramidal Pit in Si s-polarization incidence angle 65° wavelength 0.6328 µm

10. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Scatterometer Enhancement  New visible wavelength scatterometer designed, built, and tested  Provides BRDF measurement capability  Competitive specs  Used in thesis projects

11. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Light Scattering by Particles/Defects on CMP Wafers  Identified and defined critical CMP defects  Acquired standard defect samples  Dishing correlation as function of materials  Angle-resolved scattering measurements of roughness, patterns, and particles  Experimental results in reasonable agreement with models

12. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Dishing: Material and Geometry (Pitch) Dependence WSiO 2 Modulus of elasticity: Em(W)=59e-6 lb/in 2 Em(Cu)=17e-6 lb/in 2 Dishing: at L=10  m and PD=1/2 D(W)=71.4 nm D(Cu)=144 nm CuSiO 2

13. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Natural Scratch and Artifact v-shape, 1.3  m wide, 4.7 nm deep scratch on SiO 2 v-shape, 0.85  m wide, 95 nm deep scratch on SiO 2 - made by diamond tip on AFM

14. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Scattering by 0.305  m PSL Spheres on Si Substrate & on SiO 2 Film Si 0.785-  m SiO 2

15. Consortium for Metrology of Semiconductor Nanodefects Mechanical Engineering Consortium Research Roadmap  Instrumentation and Scatterometry  Fabrication and Characterization of Standards  Modeling and Simulation