1. IIV and CV Measurements of rd50-(2551-6, 2551-4, 2552-7) Sadia Khalil VELO Group Meeting

2. S1 S2 L S3 Rd50-2551 Sensors

3. Properties Provided by Micron semiconductor Limited FZ (float Zone) technology  >8  cm N on P V dep = 40V V dep(expected) = = 43.3V Thickness = d = 312  m

4. Bulk Current and GR Current for all 2551-6 sensors.

7. CV Measurements

8. V dep = -50V, micron provided value = -40V

9. V dep = -53V, micron provided value = -40V

10. V dep = -48V, micron provided value = -40V

11. rd50-2551-4

12. Properties Provided by Micron semiconductor Limited FZ (float Zone) technology  >8  cm N on P V dep = 40V V dep(expected) = = 43.6V Thickness = d = 313  m

13. Bulk Current and GR Current for all 2551-4 sensors.

16. CV Measurements

17. V dep = -72V, micron provided value = -40V

18. V dep = -74V, micron provided value = -40V

19. V dep = -75V, micron provided value = -40V

20. rd50-2552-7

21. S1 S2 L S3

23. Bulk Current and GR Current for all 2552-7 sensors.

26. CV Measurements