1. Kevin WangNanofabrication Seminar2008/4/27

2.  Aguirre, C.M., Martel, R. et al.  Engineering Physics, EP Montréal  Chemistry, U. of Montréal  Backgated  Pentacene Island  Thin Film

3.  Double-wall nanotubes  Form gaps - electrical breakdown  Contacts – optical lithography  Ti and Pd by e-beam evaporation  Anneal (vacuum) 550°C, 1h  Post-Breakdown

4.  Spin-coat precursor  2 mg/mL chloroform solution  13,6-N-sulfinylacetamido- pentacene  Converts to pentacene (170-200°C)  Asymmetric CNT – Pd

5.  SWNTs (10 nanotubes/μm 2 )  Ti contacts, optical  Lithography, liftoff  Sonicate free nanotubes  Anneal (vacuum) 550°C, 1h  Pentacene (50nm)  Vacuum sublimation (0.2nm/s)

6.  W/L = 200μm/20μm  Au or Ti, 30 nm thick

7.  40 nm gap device  I on /I off = 100  I on = 2nA (V ds = 8V)  Superlinear IV  Poor gate control  t ox = 20 nm  Subthreshold Swing  1.3V/dec

8.  Injection from CNT side  21x more current  CNT good emitter, poor collector?

9.  CNT array – ideal linear behavior  Au, Ti – nonlinear, large contact barriers  Barrier at CNT lowered by  E-field enhancement  Molecular energy shift

11.  Carbon nanotubes enhance transistor current  Effective barrier lowering at CNT-Pentacene interface

12.  Ti contacts