1. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 Introduction ExCITe Resist WP Leader: Infineon Wolf-Dieter Domke ExCITe/More Moore Meeting May 12, 2005 Athens, Greece

2. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 WP 1: EUV Resist Technology Introduction Task 1.1Preliminary Resist Materials Characterization (1Q03 – 2Q05) –Bulk litho properties („open frame“) –Outgassing in vacuum and under EUV radiation –Ultra-Thin Resist thermal properties –Correlation of LER with polymer properties and diffusion Task 1.2EUV Resist Systems for the ≤ 45nm Nodes (1Q04 – 4Q05) –Printing capability –Assessment of resolution limitations (e.g. LER ) –Optimize resist formulation and processing –Identification of resist and process roadblocks for the 45nm node

3. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 Koen van Ingen Schenau Jean-Yves Robic Karl van Werden Kurt Ronse Wolf-Dieter Domke * Peter Zandbergen ** *) Work Package 1 Leader **) MEDEA+ T406 Project Leader Italy: Carmelo Romeo France: Daniel Henry Enzo Di Fabrizio Michele Bertolo Harun Solak WP 1: EUV Resist Technology Cooperation

4. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 200320042005 Q1Q2Q3Q4 Q1Q2Q3Q4Q1Q2Q3 02 Q4 Definition phase Basic materials characterizationResist formulation & characterization Open frame characterization Patterning Characterization, Screening Hardmask, process characterization Definition phase M1.1.1M1.1.2M1.1.5M1.1.6M1.2.1M1.1.8M1.1.7M1.2.2M1.2.4M1.2.6M1.2.5 master milestones we are here now M1.2.3 WP 1: EUV Resist Technology Status and Results report on resist and process limitations resist screening status report Resist & process roadblocks for 45nm node identified

5. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005  9 out of 12 milestones done.  Consolidated partnership within IEUVI, Sematech, International Conferences & Workshops – involved in specs & methodology discussions.  Resist Materials Characterization : open frame exposures finished, fundamentals for shot noise, diffusion and LER studied with diffused point-spread function methodology.  MET and Interference Exposures worldwide successfully started. Resolution is limited by the resists, no longer by the tools.  Workshops on Resist Limitations initiated  Status of EUV resist processing issues for 45nm node identified and reported.  EUV resist outgassing methodology developed; outgassing of some resist classes quantified – ongoing work in IEUVI.  9 out of 12 milestones done.  Consolidated partnership within IEUVI, Sematech, International Conferences & Workshops – involved in specs & methodology discussions.  Resist Materials Characterization : open frame exposures finished, fundamentals for shot noise, diffusion and LER studied with diffused point-spread function methodology.  MET and Interference Exposures worldwide successfully started. Resolution is limited by the resists, no longer by the tools.  Workshops on Resist Limitations initiated  Status of EUV resist processing issues for 45nm node identified and reported.  EUV resist outgassing methodology developed; outgassing of some resist classes quantified – ongoing work in IEUVI. WP 1: EUV Resist Technology Highlights (as presented at Oberkochen Review)

6. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 PMMA (non-CA resist) imaging at PSI Best resolution obtained with optical lithography so far 17.5nm L/S 35nm contacts15nm L/S Resist Performance Screening by EUV Interference Lithography: Resolution no longer limited by tool, but by resist ( 3rd Int EUV Symp.; Miyazaki) 40nm in CA-resist

7. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 WP 1: EUV Resist Technology ALS/MET evaluation ongoing 35nm L/S in MET-2D, left: dark field mask, right: bright field mask ExCITe exposures at ALS/MET: resist screening, flare, & process experiments Flare has a dramatic impact on LER 50 nm L/S: 300nm DoF at E= 17.85mJ/cm 2 F=-200nm -150 -100 -50 0 +50 +100 process window evaluation

8. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 WP 1: EUV Resist Technology Outgassing Evaluation ESCAP (UV5) MS spectrum Online MS and proofplate method installed at Leti; first EUV resist outgassing results available

9. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 Polymers with high tendency to chain scissioning show the most outgassing acrylic model resists show more chain scissioning in EUV compared to even 157nm. Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassing than 193nm resists. ESCAP resist shows dose- dependent scissioning / crosslinking behavior Only DUV resist platform fulfill ASMLs outgassing specs for  - tool Polymers with high tendency to chain scissioning show the most outgassing acrylic model resists show more chain scissioning in EUV compared to even 157nm. Outgassing at EUV of different polymer platforms vary by 3 orders of magnitude, DUV resists show less outgassing than 193nm resists. ESCAP resist shows dose- dependent scissioning / crosslinking behavior Only DUV resist platform fulfill ASMLs outgassing specs for  - tool WP 1: EUV Resist Technology Outgassing Evaluation Quantitation of total outgassing [molecules/cm2 sec]

10. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 WP 1: EUV Resist Technology Line Edge Roughness & Diffusion Method of diffused point-spread function developed and used for determination of resist diffusion limitations Sensor, Resist Lens Point Spread Function (PSF) Reticle Diffusion Length (nm) Diffusion lengths are correlated to LER

11. ExCITe T406 – WP 1 - EUV Resist Technology Quarterly Meeting Athens, 11/12. 5. 2005 WP 1: EUV Resist Technology Future Outlook (as presented at Oberkochen Review) Resist Characterisation: BEL debugging is still ongoing (M1.2.1-2) Open Frame Characterization is finished (M1.1.5 & M1.1.7); Emphasis of Patterning experiments is resist screening, flare impact and processing issues (bake, diffusion, LER,..) (M1.2.3-5) Resist & Process specs will be constantly updated during IEUVI Working Group Interactions (M1.2.3-5) Resist Outgassing experiments will be continued by the ExCITe partners. Standardization of Outgassing protocols will be driven through interaction MEDEA / IEUVI / Sematech European Workshop on Resist Limitations will be continued (MEDEA ExCITe / More Moore (organizing)) and will be used to drive international activities on: –Understanding and Optimization of Photospeed, Line Edge Roughness and Shot Noise –Understanding of the Resolution Limits of Chemically Amplified Resists –Understanding, what is a safe level of Resist Outgassing?