1. GaN-Based Transistor Energy Converter @ Sub-GHz
Yosef Bernstein
Ilan Aharon
י'/כסלו/תש"פ

2. Converters basics
י'/כסלו/תש"פ

3. Buck (step down) Converter
י'/כסלו/תש"פ

4. Boost (step up) Converter
י'/כסלו/תש"פ

5. Converter on Chip
י'/כסלו/תש"פ

6. GaN FET versus Silicon MOSFET
י'/כסלו/תש"פ

7. GaN Switch
י'/כסלו/תש"פ

8. GaN Switch
י'/כסלו/תש"פ

9. GaN 𝐹 𝑆𝑊,𝑚𝑎𝑥
EPC application note AN003: Using Enhancement Mode GaN-on-Silicon Power FETs (eGaN® FETs)
Infineon-ApplicationNote_CoolGaN_600V_emode_HEMTs-AN-v01_00-EN
י'/כסלו/תש"פ

10. Buck Converter
𝑉 𝑜 𝑉 𝑠 =𝐷
CCM transfer function Minimal inductance for CCM DCM transfer function
𝐿 𝑚𝑖𝑛 = 𝑉 𝑆 (1−𝐷 2 𝐼 𝐿 𝑓
𝑉 𝑂 𝑉 𝑆 = 𝐷 𝐷+ 𝐷 1 =…= 2𝐷 𝐷± 𝐷 2 + 8𝐿 𝐼 𝑂 3 𝑓 𝑃 𝑂
8𝐿 𝐼 𝑂 3 𝑓 𝑃 𝑂
L=0.5nH; 𝐼 𝑜 =0.02𝐴;𝑓=200𝑀𝐻𝑧; 𝑃 𝑂 =4
8∙0.5∙ 10 −9 ∙ ∙200∙ = 25.6∙ 10 −6 4 =6.4∙ 10 −6 ≈0
→ 𝑉 𝑂 = 𝑉 𝑆
י'/כסלו/תש"פ

11. Buck Converter
𝐼 𝐿 = 1 2 𝐼 𝐿,max ∙ 𝐷+ 𝐷 1 = 𝑉 𝑂 𝑅
Inductor average current Inductor peak current Switch RMS current Charge Time and Frequency
𝐼 𝐿,max =∆ 𝐼 𝐿 = (𝑉 𝑆 − 𝑉 𝑂 ) 𝐿 𝐷𝑇= 𝑉 𝑂 𝐷 1 𝑇 𝐿 = 𝑉 𝑂 𝐷 1 𝐿 𝑓 𝑆𝑊
𝐼 𝑄,rms = 𝐷⋅𝑄⋅ 𝑉 𝑆 − 𝑉 𝑂 ⋅𝐿⋅ 𝐼 𝑎𝑣𝑔 ∙ 𝐷⋅ 𝑉 𝑆 2⋅ 𝑉 𝑂
𝑄=𝐶⋅𝑉=𝐼⋅𝑡
𝑡= 𝐶⋅𝑉 𝐼 𝑎𝑣𝑔   ⇒ 𝑓 𝑆𝑊 = 𝐼 𝑎𝑣𝑔 𝐶⋅𝑉
י'/כסלו/תש"פ

12. Buck Converter
י'/כסלו/תש"פ

13. Boost Converter
𝑉 𝑜 𝑉 𝑠 = 1 1−𝐷
CCM transfer function Minimal inductance for CCM DCM transfer function Frequency versus Current
𝐿 𝑚𝑖𝑛 = 𝑉 𝑂 ⋅𝐷(1−𝐷 𝐼 𝑂 ⋅2⋅𝑓
𝑉 𝑂 𝑉 𝑆 = 𝐷+ 𝐷 1 𝐷 1 =…= 𝐷 2 𝑃 𝑂 (2𝐿⋅ 𝐼 𝑂 2 𝑓 𝑆𝑊 )
𝑓 𝑆𝑊 = 𝑉 𝑆 2 𝐷 2 2 𝐼 𝑂 𝑉 𝑂 − 𝑉 𝑆
𝐼 𝑂 = 𝑉 𝑆 2 𝐷 2 2 𝑓 𝑆𝑊 𝑉 𝑂 − 𝑉 𝑆
י'/כסלו/תש"פ

14. Boost Converter
𝐼 𝐿 = 1 2 𝐼 𝐿,max ∙ 𝐷 1 = 𝑉 𝑂 𝑅
Diode average current Inductor peak current Switch RMS current Charge Time and Frequency
𝐼 𝐿,max =∆ 𝐼 𝐿 = 𝑉 𝑆 𝐿 𝐷𝑇= 𝑉 𝑆 𝐷 𝐿 𝑓 𝑆𝑊
𝐼 𝑄,rms = 𝑉 𝑆 𝐷 2 ⋅ 𝑓 𝑆𝑊 𝐿 ∙ ⋅ 𝑓 𝑆𝑊 ≈ 𝑉 𝑆 𝐷 2 ⋅3⋅ 𝑓 𝑆𝑊 𝐿
𝑄=𝐶⋅𝑉=𝐼⋅𝑡
𝑡= 𝐶⋅𝑉 𝐼 𝑎𝑣𝑔   ⇒ 𝑓 𝑆𝑊 = 𝐼 𝑎𝑣𝑔 𝐶⋅𝑉
י'/כסלו/תש"פ

15. Boost Converter
י'/כסלו/תש"פ

16. EPC GaN max Freq. Vgs 6 Vds 100 Part Rds (mOhm) Qg Qoss (nC) Ia IpulseRg
Tout (ns)
Fo,max(MHz)
Tin(ns)
Fin,max(MHz)
Fsw
EPC2038
0.33
0.04
0.134
0.5
4.8
0.0022
0.070
EPC2037
0.55
0.12
0.6
1.7
2.4
0.0165
0.019
EPC8010
0.16
0.36
2.2 4
7.5
0.3
0.0176
0.036
EPC2036
0.73
0.7
3.9 18
0.1424
2107.5
0.140
EPC2007C
1.6
8.3 6 40
0.4
0.1245
2409.6
0.213
EPC2051
0.25
7.3
5.7 37
0.0913
3287.7
0.170
EPC2016C
3.4 16 75
0.1280
2343.8
0.453
EPC2052
0.135
3.6 13
8.2 74
0.0878
3418.8
0.840
EPC2045
5.9 25
130
0.8750
342.9
1.180
EPC2001C 31 36
150
1.0850
276.5
0.750
EPC2053
0.38 12 45 48
246
0.8550
350.9
2.400
EPC2032 66
340
1.3200
227.3
1.600
EPC2022
0.32
13.2 71 90
390
1.1360
264.1
1.320
י'/כסלו/תש"פ

17. EPC GaN max Freq. Vgs 6 Vds 100 Part Rds (mOhm) Qg Qoss (nC) Ia IpulseRg
Tout (ns)
Fo,max(MHz)
Tin(ns)
Fin,max(MHz)
Fsw
EPC2038
0.33
0.04
0.134
0.5
0.96
0.0022
0.014
EPC2037
0.55
0.12
0.6
1.7
2.4
0.1
0.0165
0.004
EPC8010
0.16
0.36
2.2 4
7.5
0.06
0.0176
0.007
EPC2036
0.73
0.7
3.9 18
0.1424
2107.5
0.028
EPC2007C
0.3
1.6
8.3 6 40
0.08
0.1245
2409.6
0.043
EPC2051
0.25
7.3
5.7 37
0.0913
3287.7
0.034
EPC2016C
3.4 16 75
0.1280
2343.8
0.091
EPC2052
0.135
3.6 13
8.2 74
0.14
0.0878
3418.8
0.168
EPC2045
5.9 25
130
0.8750
342.9
0.236
EPC2001C 31 36
150
1.0850
276.5
0.150
EPC2053
0.38 12 45 48
246
0.8550
350.9
0.480
EPC2032
0.4 66
340
1.3200
227.3
0.320
EPC2022
0.32
13.2 71 90
390
1.1360
264.1
0.264
Vgs 6
Vds
100
י'/כסלו/תש"פ

18. EPC GaN Gate Losses Fsw [MHz] 200 Vgs 6 Vds 100 Part Qg Rg Tin(ns)
Fin,max(MHz)
Fsw Pg
EPC2038
0.04
4.8
0.070
0.026
EPC2037
0.12
0.5
0.019
0.069
EPC8010
0.36
0.3
0.036
0.216
EPC2036
0.7
0.6
0.140
0.420
EPC2007C
1.6
0.4
0.213
0.960
EPC2051
1.7
0.170
1.020
EPC2016C
3.4
0.453
2.040
EPC2052
3.6
0.840
2.160
EPC2045
5.9
1.180
3.540
EPC2001C
7.5
0.750
4.500
EPC2053 12
2.400
7.200
EPC2032
1.600
EPC2022
13.2
1.320
7.920
Fsw [MHz]
200
Vgs 6
Vds
100
י'/כסלו/תש"פ

19. GaN FET versus Silicon MOSFET
י'/כסלו/תש"פ

20. Interleaving
י'/כסלו/תש"פ

21. Applications DC-DC converters LIDAR Envelop Tracker Amplifiers
י'/כסלו/תש"פ

22. 200MHz Boost converter 3.3V to 9V
י'/כסלו/תש"פ

23. 200MHz Super Boost
י'/כסלו/תש"פ

24. Output (94.3% efficiency) with 4W per stage on the driver
י'/כסלו/תש"פ

25. Power In : 680W - Power Out : 590W = 90W / 3stages = 30W/stage
Power per stage
(Approximate)
%loss
Main Switch
20W
66% (on-chip)
Diode Loss 8W
26%
Resistor/Driver
5W Resistor
1W Oscillator
20%
Control Voltage for PWM/Driver
<1W 1%
י'/כסלו/תש"פ

26. י'/כסלו/תש"פ