1. Temperature dependant transport behavior of Bismuth
肖顺豪 导师：金晓峰
Department of Physics, Fudan University, Shanghai
Introduction
In this work, temperature dependent resistivity and Hall Effect of bismuth (Bi) ultrathin films were measured. By changing film thickness, bismuth exhibit different transport behavior. Our results indicated that in ultrathin bismuth films, the delicate transport property is determined by two parts: metallic surface state and semiconductor bulk.
PRB 53, 1609 Mei Lu etc.
Samples
epitaxial Bismuth thin film on BaF2 (111) surface in UHV MBE system
Experiments
Temperature dependant resistance measured in PPMS
BaF2
2nm Bi
9-13nm Bi
50nm Bi
14nm Bi w=100um
50nm Bi (w=300um)
Data Analysis
At the maxim point
K~19, b~2.25
The bump can be interpreted as the competition between metallic surface state and bulk semicondutor
Metallic surface
Semiconductor bulk