2. Presenters: Zeeshan Akhtar ID # 6118000011 Modern Electric Drive Automatic Control System : Sir: Chi Yan Bo / 车延博 Tianjin University, China

3. Contents: General Introduction to IGBT IGBT Equivalent Circuit IGBT Output Characteristics IGBT usage as a Switch IGBT Datasheet IGBT Applications IGBT Power Losses Some FAQs about IGBTs References Note: Presentation include some videos for demonstration taken from different sources

4. IGBT: Insulated-Gate Bipolar Transistor Combination BJT and MOSFET High Input Impedance (MOSFET) Low On-state Conduction Losses (BJT) High Voltage and Current Ratings Symbol

5. Cross-Sectional View of an IGBT:

6. IGBT Equivalent Circuit for V GE <V T + V CC I EPNP I CPNP I BPNP I CNPN I ENPN I BNPN Leakage Current I RBE Both transistors are OFF

7. IGBT Equivalent Circuit for V GE >V T : + V CC NPN Transistor becomes forward biased at the BE, drawing current from the Base of the PNP transistor. MOS transistor conducts, drawing current from the Base of the PNP transistor. PNP transistor turns ON, R MOD decreases due to carrier injection from the PNP Emitter.

8. Channel is Induced When V GE >V T : Induced Channel electrons R MOD PNP R BE NPN

10. IGBT Output Characteristics Follows an SCR characteristic

11. IGBT Transfer Characteristic:

12. IGBT Used as a Switch:

13. Electro mechanical Relay Operating from IGBT:

17. Fairchild FGA25N120AND IGBT:

35. Power Losses in an IGBT Module : Power loss in an IGBT mainly consists of steady – state conduction loss and switching loss. The switching loss in the IGBT is given by E sw = E on + E off whereas, in the Diode it is given by the reverse recovery loss. All these switching energies can be added together multiplied by the switching frequency to give the total module switching losses. The conduction losses for the IGBT and free- wheeling diode are the product of the current flowing through the collector or anode and saturation voltage (on state voltage) over the conducting period. In contrast, the switching losses happen as a result of energy loss during the transition and switching frequency.

36. Power Losses in an IGBT Module : IGBTs works in two states and produce losses in those states; conduction losses and switching losses. Conduction losses mainly depend on the duty cycle, load current and junction temperature, whereas, switching losses depends on the load current, dc link voltage, junction temperature and switching frequency. If the switching frequency is higher, then the losses will be higher. Power losses for different stages give significant amount of power loss in an IGBT module if driven carefully. The total average power of the IGBT is the sum of the conduction loss, turn on and turn off losses as shown in Eqn.1 P avg.IGBT = P cond + P on + P off + P thermal

37. Power Losses in an IGBT Module :

56. Reverences: Google Wekipedia Slideplayer Fujielectric Mitsubishi Semikron www3.ntu.edu.sg YouTube