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Day 29: November 10, 2014 Memory Core: Part 1

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Presentation on theme: "Day 29: November 10, 2014 Memory Core: Part 1"— Presentation transcript:

1 Day 29: November 10, 2014 Memory Core: Part 1
ESE370: Circuit-Level Modeling, Design, and Optimization for Digital Systems Day 29: November 10, 2014 Memory Core: Part 1 Penn ESE370 Fall DeHon

2 Today 5T/6T SRAM DRAM Writing Charge sharing Precharge
Penn ESE370 Fall DeHon

3 Memory Bank Penn ESE370 Fall DeHon

4 5T SRAM Memory Bit Penn ESE370 Fall DeHon

5 Write (preclass 1) Assuming properly select only one WL, what does write circuit look like? What transistors are ON when writing a 0 over a cell that holds a 1? Drive with inverter at BL Width Wwrite Voltage written? 1V Penn ESE370 Fall DeHon

6 Write (preclass 1) Assuming properly select only one WL, what does write circuit look like? Voltage written? 1V Penn ESE370 Fall DeHon

7 Write Conclude? Writing into cell is a ratioed operation.
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8 Write (preclass 2) Assuming properly select only one WL, what does write circuit look like? How different when writing a 1 over a cell holding a 0 ? 1V Penn ESE370 Fall DeHon

9 6T Cell How does 6T make it easier to perform writes?
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10 Preclass 3 Initially Close switch Voltage at A? A @ 1V B @ 0V
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11 Preclass 3 Initially QA=1V*C1=C1 Close switch Qtot=Vfinal*(C1+C0)
0V QA=1V*C1=C1 Close switch Qtot=Vfinal*(C1+C0) Charge conservation QA=Qtot C1=Vfinal*(C1+C0) Penn ESE370 Fall DeHon

12 Consider (preclass 4) Read: What happens to voltage at A when WL turns from 01? Assume Waccess large Waccess >> Wpu=1 BL initially 0 A initially 1 Penn ESE370 Fall DeHon

13 Voltage After enable Word Line
QBL = 0 QA = (1V)(g(2+Waccess)C0) CBL>>CA=(g(2+Waccess)C0) After enable Waccess (Waccess large) Total charge QBL +QA roughly unchanged Distributed over larger capacitance~=CBL VA=VBL~= CA/CBL Penn ESE370 Fall DeHon

14 Larger Resistance? What happens if Waccess small? Waccess < Wpu
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15 Larger Resistance? What happens if Waccess small?
Waccess < Wpu Takes time to move charge from A to BL Moves more slowly than replished by pu Penn ESE370 Fall DeHon

16 Simulation: Waccess=100 Penn ESE370 Fall DeHon

17 Simulation Penn ESE370 Fall DeHon

18 Charge Sharing Conclude: charge sharing can pull down voltage
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19 Consider What happens to voltage at A when WL turns from 01?
Assume Waccess large Penn ESE370 Fall DeHon

20 Simulation Waccess=20 Penn ESE370 Fall DeHon

21 Simulation Waccess=4 Penn ESE370 Fall DeHon

22 Charge Sharing Conclude: charge sharing can lead to read upset
Charge redistribution adequate to flip state of bit Penn ESE370 Fall DeHon

23 How might we avoid? Penn ESE370 Fall DeHon

24 Charge to middle Voltage
Charge bitlines to Vdd/2 before begin read operation Now charge sharing doesn’t swing to opposite side of midpoint Penn ESE370 Fall DeHon

25 Pre-Charge Use one phase of clock to charge a node to some initial value before operation Precharge Transistor Can be large Penn ESE370 Fall DeHon

26 Simulation Waccess=20 Penn ESE370 Fall DeHon

27 Compare Both Waccess=20; vary precharge Penn ESE370 Fall DeHon

28 Simulation Waccess=20 (precharge Vdd/2, reading 0)
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29 Simulation Waccess=20 (with precharge Vdd/2)
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30 Pre-Charge Use one phase of clock to charge a node to some initial value before operation Precharge Transistor Can be large Penn ESE370 Fall DeHon

31 5T/6T SRAM Questions? Penn ESE370 Fall DeHon

32 Idea Memory can be compact Demands careful sizing
Penn ESE370 Fall DeHon

33 Admin HW7 due tomorrow Project 2 out Due 2 weeks from tomorrow
Tuesday before Thanksgiving Penn ESE370 Fall DeHon


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