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Metamaterials Fabrication

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Presentation on theme: "Metamaterials Fabrication"— Presentation transcript:

1 Metamaterials Fabrication
D. Cengher, M. Gokkavas, M. Sfendourakis and G. Constantinidis Microelectronics Research Group, IESL - FORTH

2 Types of Resonators fabricated
Two types of Split-Ring Resonators (SRRs) were used for fabrication of metamaterials square shaped SRR circular shaped SRR DALHM - First Year Meeting

3 Typical lift-off procedure used in fabrication of LHM structures
DALHM - First Year Meeting

4 Processing steps for fabrication of metamaterials
Deposition of alignment marks on the wafer (for 4 inch silicon wafers) Wafer cleaning Wafer coating with photoresist by spinning. Typically, the photoresist used is AZ 5214, but we have used also the photoresist AZ 4562 Soft-baking of the photoresist UV exposure of the photoresist using a Karl Suss MA6/BA6 maskaligner Second UV exposure necessary if we use image reversal procedure Treatment of the AZ 5214 photoresist in Clorobenzene Developing of the pattern using AZ 400K photoresist developer Deposition of 1 m thick silver/copper layer in a TEMESCAL UHV e-gun evaporator Lift-off of the unnecessary metal in acetone or wet etching DALHM - First Year Meeting

5 DALHM - First Year Meeting
Samples fabricated DALHM - First Year Meeting

6 10 GHz Sample on textolite
10 GHz Sample on Silicon 10 GHz Sample on textolite DALHM - First Year Meeting

7 DALHM - First Year Meeting
10 GHz Sample on glass 30 GHz Samples DALHM - First Year Meeting

8 30 GHz in-plane LHM structures
DALHM - First Year Meeting

9 Multistacking of 1D LHM structures
12 layers polyamide - Ti metallic mesh was fabricated polyamide layers with thickness from 1 μm to 10 μm were obtained to allow fabrication of stacks with different distances between metallic meshes DALHM - First Year Meeting

10 DALHM - First Year Meeting
Dicing of LHM periods Reactive Ion Etching of silicon using SF6 Lapping of silicon samples to 40 μm Wet etching of GaAs Two step wet etching Lapping of GaAs wafers to 300 μm DALHM - First Year Meeting

11 DALHM - First Year Meeting
Future developments Etching technology will be fully developed Structures with the gap of each SRR filled with semiconductor will be fabricated ? DALHM - First Year Meeting

12 DALHM - First Year Meeting
Conclusions Different substrates were used for fabrication of metamaterials from silicon or GaAs to glass or polyethylene foil without major technological problems we have adapted our equipment for the requirements of fabrication of metamaterials the only “problem” is the number of separate samples necessary because our equipment is not adapted for small scale production DALHM - First Year Meeting


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