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Chap. 1 Introduction. Chap. 1 Introduction What are Logic NVMs? Can be fabricated concurrently with logic circuit function No or few masks added Used.

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Presentation on theme: "Chap. 1 Introduction. Chap. 1 Introduction What are Logic NVMs? Can be fabricated concurrently with logic circuit function No or few masks added Used."— Presentation transcript:

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2 Chap. 1 Introduction

3 What are Logic NVMs? Can be fabricated concurrently with logic circuit function No or few masks added Used to store: program codes, security or identification codes, parameters for calibration or function settings. Stand along or embedded NVM works, but…… Pin count ↓, board space ↓, interchip connection↓, system cost↓

4 What are Logic NVMs? Commodity NVM ~ 10 masks added
Logic NVM: single-poly NVM process, design cycle↓, easy to implement, simple to transfer across CMOS process.

5 Which Logic NVM to use? How does it works?
Full compatibility with generic CMOS process structural simplicity low manufacturing cost testability for manufacturing monitoring flexible and customizable design for customer products Floating gte

6 When to use Logic NVMs

7 Why to use Logic NVMs Low mask countslow cost
Easy to transferwidespread production option Security (single chip)

8 Where to get Logic NVMs?

9 How to use Logic NVMs? OTP EEPROM MTP

10 Sec. 3.1 Device

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16 Transimpedance amplifier
Transimpedance amplifier with a reverse biased photodiode Simplified transimpedance amplifier

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29 Sec. 3.2 Process Integration

30 剖面圖

31 記憶單元剖面結構 Select transistor memory transistor Source Line

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35 Why Shallow Trench Isolation
To prevent latch-up and isolate transistors from each other.

36 Why deep N-well Deep n-Well (DNW) is necessary to isolate each p-Well
from the high potential generated for programing and erasing by the pumping circuitry Depletion region

37 High quality oxide grown by thermal dry oxidation
35 Å~ 40 Å CVD deposition In-situ steam generation (ISSG) Thicker than tunneling oxide to prevent charge loss during retention

38 Poly Gate Formaton

39 Reverse ONO Etch This mask is used to tune the device performance
LDD implantation This mask is used to tune the device performance

40 Sec. 3.3 Reliability

41 Time-Dependent Dielectric Breakdown

42 TDDB Larger area quicker failure

43 Exponential decay Linear scale log scale 100/e=36.8

44 Reliability 36.8% survive population/e lifetime of exponential decay

45 36.8% survive population/e lifetime of exponential decay
Lifetime 101.8=65(yrs)

46 Lifetime 101.8=65(yrs) Cell lasts much longer than pumping circuit

47 Larger areahigher device counthigher failure ratelower lifetime

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