1. The measurement set-up
Repeated study done by Pisa on the effect of large resistor in bias return path
Varied resistor value between 2.2 KW-25 MW
Same trends seen as in Pisa’s study in first module
Second module did not show any significant change in CMN

2. Module 1011 CMN vs Vbias@ R= 2.2 KW
Strip noisy at 150 V
Implant mV
CMN noise at 200 V
Implant mV

3. Module 1011 CMN vs Vbias@ R= 200 KW
Strip noisy at 150 V
Implant mV
CMN noise at 200 V
Implant mV

4. Module 1011 CMN vs Vbias@ R= 1 MW
Strip noisy at 200 V
Implant V
CMN noise at 200 V
Implant Voltage at breakdown comparable to APV virtual ground

5. Module 1011 CMN vs Vbias@ R= 2 MW
Strip noisy at 200 V
Implant V
CMN noise at 250 V
Implant V
Implant Voltage at breakdown 5 times larger than APV virtual ground

6. Module 1011 CMN vs Vbias@ R= 5 MW
Strip noisy at 300 V
Implant V
CMN noise at 350 V
Implant V
Implant Voltage at breakdown 12 times larger than APV virtual ground

7. Module 1011 CMN vs Vbias@ R= 7.5 MW
Strip noisy at 400 V
Implant V
CMN noise at 450 V
Implant V
Implant Voltage at breakdown 21 times larger than APV virtual ground

8. Module 1011 CMN vs Vbias@ R= 10 MW
Strip noisy at 500 V
Implant V
Large areas of increased noise
Not clear what is the cause of this effect

9. Module 1011 IV vs. Resistance
The bias current decreases with resistance
The bias current deviates from QTC probing at point of noise increase on strip for all resistance values
With 10 MW, current matches QTC probing values
Result consistent with micro-discharge reducing with increased voltage of implant

10. Module 1015 IV vs. Resistance
The bias current decreases with resistance
No change in CMN seen with even a 25 MW resistor
Implant voltage as high as 60 V at point of discharge with no CMN change

11. Module 1015 CMN vs Resistance I
Module Kohm

12. Module 1015 CMN vs Resistance II

13. Module 1015 CMN vs Resistance III

14. Module 1015 CMN vs Resistance IV