1. NSF Berkeley site visit March 2, 1998
Technology CAD: Opportunities and Impact
Andrew Neureuther
Overview of Technology CAD (TCAD)
Electron Interactions
TEMPEST Optical Scattering
Lithographic Materials 1 1

2. Overview of Technology CAD (TCAD)
TCAD simulates process and device issues in Integrated Circuit technology
Simulation has become 50,000,000 times cheaper relative to experiment since 1975
Yet demanding applications - predictive 3D - require 100 Tops, 20 G Byte disk storage, 10 runs/month
Goal: Move from
“Yesterday’s technology simulated tomorrow” To
“Tomorrow’s technology simulated Yesterday” 2

3. Examples: Electron-Beam Lithography
Point Focus 3

4. Examples: Electron-Beam Lithography
Masked beam 4

5. Examples: Electron-Beam Lithography
Performance data 5

6. Examples: Electron-Beam Lithography
Electron interactions in uA Beams limit throughput by producing random scattering which is not understood and cannot be compensated by refocusing.
Computational status
1 uA beams take a day and 30 uA take 900 days
Fast Multipole Acceleration (FMA) promises nearly linear CPU with beam current and is suitable for parallelization
Computational system needs
300K electrons, 100 Tops, 2 G memory, 20 G Bytes storage
10 runs/mo, system muli-views, trace-back of trajectories 6

7. Examples: Scattering in Optical Lithography
Mask Geometry 7

8. Examples: Scattering in Optical Lithography
OPC effect 8

9. Examples: Scattering in Optical Lithography
Disk head SEM 9

10. Examples: Scattering in Optical Lithography
WEB interface 10

11. Examples: Scattering in Optical Lithography
Unwanted light scattering in optical lithography and inspection limits performance and requires careful design of recording materials, masks, wafer topography, alignment and inspection.
Computational status
Pushing the 1000 l3 EM barrier
FDTD MEMORY scales as volume and CPU scales as volume 4/3
Computational system needs
160M nodes, 100 Tops, 10 G memory, 20 G bytes storage, 10 runs/mo, 100 runs/mo for 4x smaller problems
Fly through visualization, web I/O 11

12. Examples: Image recording materials issues
Silylation 12

13. Examples: Image recording materials issues
Recording Materials with chemical amplification show a 20x improvement in sensitivity but suffer from
reaction, state dependent diffusion (type II), moving boundaries, suppression of reaction rates by local stress
Computational status (2D)
Extremely stiff, 6 variables, 500 nodes
Numerical Acceleration 50X
Computational system needs (3D)
Parallelized LU to get to 3D effects
100 Tops, 1 G memory, 20 G Bytes storage, 10 runs/month, 100 runs/month for 2D 1 Tops 13

14. Technology CAD: Opportunities and Impact
Lithography TCAD is an area where computational simulation is resulting in better engineering.
Increases in performance and programming ease will continue to advance the scale of the engineering effort.
Multiple clusters of processors with high speed communication, parallel algorithms, performance analysis tools, and visualization are needed for for both quick turn around and large (100 Tops) problems. 14

15. Visualization: Capabilities
Tools
Interoperability with simulator
Data management
Filters
Displays
Local 108 pixels/sec
Network 106
Web 104
Agent
Views
Simultaneous multi-views of system
Dynamic monitoring
Interactive fly through 15