1. Status report on the SiLC ongoing activities
Frédéric Kapusta, LPNHE-Université Paris 6 & CNRS/IN2P3
On behalf of Aurore Savoy-Navarro
SiLC R&D in Europe: Latest since LCWS’04
ALCPG Workshop, Victoria (British Columbia),
July 28th to 31st, 2004
Main Topics:
Introductory remarks
R&D on sensors and test bench results
R&D on Mechanics
Advances towards transparency
Developing techniques to build long ladders
Integration issues and simulations studies
Concluding remarks
ECFA Durham

2. Introductory remarks: The SiLC international Collaboration (PRC-DESY May 03)
Helsinki U. (Fin)
Obninsk St. U. (Ru)
IEKP Karlsruhe (Ge)
Charles U. Prague (CZ)
Ac. Sciences.Wien (Au)
LPNHE-Paris (F)
U. de Genève (CH)
Torino U. (I)
INFN-Pisa (I)
La Sapienza-Rome (I)
CNM-Barcelona (Es)
Cantabria U. (Es)
Valencia IFIC (Es)
Europe:
BNL
Wayne St.U.
U. Of Michigan
SLAC
UCSanta Cruz
-SCIPP
USA:
Korean Institutes
Tokyo U.
HAMAMATSU
Asia:
The collaborative effort is developing (regular audio/video confs).
Collaboration between several teams on various R&D topics: sensors, electronics,
tests, mechanics & simulations.
Santander, Valencia and Hamamatsu recently joined SiLC.

3. R&D sensors Main R&D objectives: Long microstrips (long ladders)
Si Drift
Keeping an eye on new Si-tech (pixelisation, VFE on detector etc…)
Main requests: TRANSPARENCY, PRECISION & BETTER YIELD
increased wafers from 6’’ to possibly 12’’
thinner and smaller pitch
Expressed interest: Hamamatsu (Now officially part of SiLC)
ST Microelectronics/Catania (tbc)
CNM-Barcelona as R&D center
Others ? New comers are welcome
For Si-drift several European teams in STAR, ALICE
have good connections with various firms (Canberra …)
Lot of expertise from LEP, CDF, and now LHC (ATLAS, CMS and ALICE)
Vienna responsible for coordinating the R&D on sensors & contacts with industry
(also presently in charge in CMS).
Main actions: collaboration with industry based on established connections &
test quality procedures for LHC to monitor the R&D & production on sensors.

4. Sensor Test Quality: set-up in HEPHY-Vienna
Semi-automatic sensor
probe station for quality
Control: system overview
Process control scheme:
Test structure
Test set-up for CMS Silicon tracking; used for tes-
ting the sensors mounted on long ladder prototypes for SiLC (similar set-up in Karlsruhe; another one fully automated in Pisa)
Self-made chuck and
probe card support

5. R&D on sensors (cont’d)
QUALITY TESTS on SENSORS:
Ten new GLAST sensors delivered by Hamamatsu for the construction of the second long ladder prototype in Paris were tested at the Test Quality Center (TQC) in HEPHY Vienna (end of June 04):
Type S8743, chip size: ±20 x ±20 µm,
thickness: 410 ± 10 µm
strip pitch: 228 µm
number of strips: 384
Total C sensor as f (reverse bias), measured between
backplane and bias line allows to extract the V depletion
of the sensor & to check its thickness
Total leakage current as f (reverse bias),
measured between backplane and bias line
Capacitance = f(V)
Total leakage current = f(V)
16 µA
3.5 pF
Capacitance (F)
Current (A)
0.5 pF o 50
100
150
200
Voltage (V)
Voltage (V)

6. Test Quality on sensors (cont’d)
Strip-by-strip tests are performed at a constant bias voltage, and are aimed to identify
defective strips ( < 1%). All four tests are performed in the same scan, by contacting DC &
AC pads simultaneously and by switching between different measurements.
Leakage current of each strip →
to identify leaky = noisy strips
I_diel measurement identify pinholes.
Polysilicon resistor connecting strips to
the bias line. The nominal value is required
as well as uniformity.
Coupling capacitor for each strip is measured
to check pinholes and monitor the uniformity
of the oxide layer.
Tests at TQC in HEPHY-Vienna gives the 10 sensors are OK

7. 1) Detector design and fabrication
R&D on sensors cont’d
CNM-Barcelona: Centro Nacional de Microelectronica offers interesting expertise's
that are of great interest for SiLC, in the following topics:
1) Detector design and fabrication
Technologies:
P-on-N, N-on-P, N-on-N
Pad, strip and pixels detectors
High resistivity poly, capacitive coupling, two metal layers, two side processing
Limited to 4 inches wafers
Radiation hard devices: Oxygenated FZ and magnetic Czochralski silicon (RD50)

8. 2) Device simulation R&D on sensors cont’d ISE-TCAD, TMA, Silvaco
Technology simulation
Electrical simulation
Charge collection
charge sharing in 3D

9. 3) Pitch adapter technology
R&D on sensors cont’d
3) Pitch adapter technology
Aluminum in glass
Radiation hard
Production for ATLAS forward Semiconductor Tracker
Fan-in’s for ATLAS Forward Silicon Tracker
Pitch adapters are important in reducing material
budget & in providing the best connection with the
electronics on detector

10. 4) Packaging Possibilities at CNM Equipment Dek248 Screen printer
R&D on sensors cont’d
Equipment
Dek248 Screen printer
ATV reflow oven with vacuum
Manual Pick&Place machine
Datacon 2200 PPS for fine pitch
Techniques
SMD
Wirebonding
Flipchip
Standard Temperatures
High temperatures: 280ºC
Multichip Modules
Standard pitch: 400µm. Screen printing
Fine pitch: 50µm. Solder electroplating
Packaging plays an important role to
help reducing material budget (%X0).
{Sensor, pitch adapter, packaging,
Electronics} = Si-DETECTOR

11. R& D on sensors: test benches Long ladder read out by VA LabView-
based DAQ
Signal from
LD1060nm
Faraday cage
14bits A/D
Electronic card:
Alims + FPGA
Automated test bench
in Paris
Motorized 3D-table ( ± 10 μ)
Most of the SiLC Institutes have well
equipped test benches: key tool
for detector & electronics R&D
Consumer PC: DB,
monitoring programs
& Bookkeeping
From remote: user

12. Preliminary results on the first long ladder prototype
Built by Geneva U/ETH Zurich &LPNHE-Paris
Average pedestal per strip
using AMS long ladder technique
Sensors are 4’’ , 300 µ thick, double-sided,
70 × 40.1 mm2, 110 µ/208µ readout pitch
(p: junction side/n: ohmic side).
A set of strips are connected in serpentine; thus strips with following length: 28 cm, 56 cm, 112 cm and 224 cm are tested.
The long ladder is presently read out with
VA64_hdr chip, with 3.7 µs shaping time.
The ENC varies from 180 e- at C=0 to 1010 e-
for the longest strip (note this is with 3.7µs) 18
Noise in mV 10
Shaping time: 3.7 µs 4 2 50
100
150
200
250
300
350
Capacitance in pF

13. L=28cm
1.146v
L=56cm
0.861v
L=112cm
L=224cm
0.771v
0.422v
In progress now: varying
shaping time up to 10 µs
to improve results for strip
length above 1 m,
and focalizing laser beam.
Next step: calibration in MIP’s
S/N > 10 is achievable
even for long strips
Signal from LD1060 on strips
28 cm long

14. R&D on Mechanics
CAD design of the architecture of the various elements of the Silicon Envelop, but can be easily translated to the All-Silicon Tracking case
Design and construction of the ladder prototype
Thermal mechanical studies
Alignment techniques are under development at U. of Michigan (FSI) and starting at U. of Cantabria (based on interferometer & LHC expertise)
Main R&D aims:
Transparency, high precision, simplicity, and easy to build

15. Ex: CAD design of for- ward tracker structure
Ex: detailed CAD (CATIA) of the
Si-FCH gives 4 XUV points, from
: X, UV, UV, UV, UV, X plans
Total width: 127 mm
Details of the alveolar structure where
false double-sided UV plans are located
Similar alveolar CAD design achieved for the SET and idem for the SIT
Next step: collaboration with Industry to check feasibility /cost of designed structure
and fabrication of a mechanical prototype for further mechanical studies
Needed: inputs from full simulation studies (occupancy) on long ladders versus “tiling” with respect to the location of the detector component.

16. Long ladder construction: 2nd prototype in construction with GLAST sensors
Sensors are
positioned
one by one on
assembly frame
Gluing of
the ladder
The long ladder structure is positioned
on the 10 sensors with 4 locatings
Ready for bonding

17. Thermal Mechanical Studies
2.5 m long drawer proto
Based on tests on a mechanical prototype:
Long drawer made of 5 ladders
located in its alveolar structure
At one end of the drawer:
cooling water → cooled
air convection by wind
turbine + conduction
In the alveolar structure
Hypotheses of work: External temperature maintained at 35°C. Power dissipation
per channel: 400 μW and no power cycling taken into account.
The goal is to maintain the temperature on the detector ≤ 30°C, in order to avoid
intrinsic noise increase.
Prototype results are used to model the CAD thermal software (SAMCEF)

18. Results obtained in function of time and with water
temperature cool down to 6.5°C: encouraging!
Conduction + convection by air cooling at 6.5°C at one end of the drawer,
maintains the temperature at ~ 31.5°C max even at the other end (2 meter away)

19. New thermal mechanical studies in Paris
Q (conv), F (surface of heat exchange in m2)
Calorific power from outside,
F(system temperature)
Q (convection), F (air flow in Kg/s)
From previous studies: 3 parameters
must be taken into account to optimize
the cooling system:
The calorific power Q (convection)
The air flow: must be optimised
The surface of heat exchange: must
be increased

20. New thermal prototype, built to comply these observations
Isolation
Thermal
hermiticity
External T=35o C
Higher air flow
Instrumented &
empty alveolas
New alveolar prototype
10x larger exchange surface
heat
New prototype

21. New thermal mechanical results
Note: water temperature at 19°C !
No need to cool down the water temperature, thus simplified cooling system.
Next step: to design and build a mechanical prototype of the C-fiber structure and
to design an overall integrated cooling system

22. Integration studies: on Mechanical side
SET
Si-FCH
In the case of a Large Detector (i.e. with TPC)
Silicon-Envelope components are in strategic positions:
SIT links μvertex (σ~2-3μm) with TPC (σ~100μm)
SET links TPC with calorimeter
Similarly in the FW region: FTD and Silicon -FCH.
Questions to be answered:
In the case of SET & Silicon-FCH especially:
One point? What precision?
One segment?
One track? (requested length of tracking level arm?)
How this design compares with SiD in central & FW?
SET
FTD
SIT
μvertex

23. TESLA geometry and Full Simulation of the h0 Z0 → b b m+ m-
Integration issues: the full simulation = essential tool
BRAHMS(G3) Full Simulation TESLA LC V. Saveliev (Obninsk U.)
TESLA geometry and Full Simulation of the h0 Z0 → b b m+ m-

24. RERECO (G3) Reconstruction: Display TESLA LC Obninsk U.
External (SET) & internal (SIT)
Silicon tracking layers
Event Display of Full Simulation of the h0 Z0 → b b m m and Particle Flow Objects

25. Mokka(G4) Silicon Tracker Envelope (if TPC central tracker) Obninsk U.
Silicon Tracker Envelope for TESLA geometry in Mokka (G4) Monte Carlo

26. Future plans on simulation studies
To pursue the full implementation
of the SiLC tracking system within
BRAHMS (G3) and GEANT 4
frameworks, in the case of both:
The TPC as central tracker
Inserting the detailed:
SIT + FTD
SET
Si-FCH
(this is well in progress)
The All Silicon tracking
And have the possibility to study
all the related issues, performing
comparisons and detailed studies.
Collaboration is developing well
between European and US teams
to perform these studies.
Fully G4 simulated H → bb, Z → e+ e- event including
SET (detector in white) (Obninsk U.)

27. Concluding remarks and prospects:
Lot of progresses made since this last spring.
The collaborative effort is developing well, as a generic R&D, studying BOTH a all-Silicon-tracking system (SiD) and a TPC + Silicon tracking (GLC/TESLA/LD).
New comers among which teams also contributing to the LHC Silicon trackers.
They bring a unique expertise & available facilities, essential to go ahead in developing the next generation of silicon tracking detectors, that are needed.
SiLC = NICE EXAMPLE of LHC x LC POSITIVE SYNERGY
Getting slimmer (material budget) will be THE focus.
New technologies are/will be helping.
GEANT-based simulation inputs are now strongly and even desperately needed to go ahead.
SiLC R&D collaboration is really taking speed
but a lot of work still ahead of us!!