1. Si x Ge 1-x and Si x Ge 1-x O y Films as a Thermal Sensing Material Mukti Rana and Donald Butler University of Texas at Arlington Electrical Engineering Dept. Arlington, TX 76019 Based in part by work supported by the National Science Foundation ECS-0322900

2. Si x Ge 1-x and Si x Ge 1-x O y Films as Sensing Material Both Si x Ge 1-x and Si x Ge 1-x O y are conventional semiconductors High TCR (~-5%/K) can be obtained with moderate resistivity value (~10 4 ohm-cm) from a suitable combination of Si x Ge 1-x O y Iborra et. al (2002) reported a TCR of -4.21%/K from RF Sputtered Si x Ge 1-x O y García et. al (2004) reported a TCR of -5.1%/K from PECVD a-Si 1-x Ge x :H,F.

3. Deposition: Si x Ge 1-x and Si x Ge 1-x O y Films Cosputtering from Ge + Si regions target. RF magnetron Sputtering at 160 W and 10 mTorr pressure. Si x Ge 1-x deposited in Ar environment. Si x Ge 1-x O y deposited in Ar:O environment.

4. Resistivity: Si x Ge 1-x

5. TCR and Activation Energy (Ea)

6. TCR and Activation Energy: Si x Ge 1-x

7. Optical Bandgap: Si x Ge 1-x

8. Resistivity: Si x Ge 1-x O y

9. Activation Energy: Si x Ge 1-x O y

10. TCR: Si x Ge 1-x O y

11. Noise PSD: Si 0.15 Ge 0.85 O y @ 1.79 μA Bias Current

12. Transmittance: Si 0.15 Ge 0.85 O y

13. Optical Bandgap: Si x Ge 1-x O y

14. X-ray Diffraction (XRD) Pattern for Si 0.125 Ge 0.8365 O 0.039

15. Energy Dispersive X-Ray Analysis of Si 0.1188 Ge 0.8472 O 0.034 Film By Scanning Electron Microscope (SEM)

16. Transmittance: Si x Ge 1-x

17. Transmittance: Glass Substrate used for Depositing Si x Ge 1-x O y and Si x Ge 1-x Thin Films

18. Si x Ge 1-x O y and Si x Ge 1-x : Normalized Hoogie Coefficient for 1/f-noise (α H /N) determined at 10 Hz frequency and other properties SAMPLENormalized Hooge parameter α H /N TCR (%/K) Activation Energy (E a ) (eV) Optical Bandgap (E g ) (eV) Si 0.15 Ge 0.85 1.70 × 10 -10 4.20.2640.91 Si 0.099 Ge 0.871 O 0.031 4.3 × 10 -11 4.40.2970.80 Si 0.118 Ge 0.847 O 0.034 1.10 × 10 -10 4.60.3100.81 Si 0.125 Ge 0.8365 O 0.039 < 2.58 × 10 -8* 5.10.3240.89 Si 0.114 Ge 0.834 O 0.052 < 2.35 × 10 -6* 5.70.3680.89 Si 0.172 Ge 0.736 O 0.092 < 4.06 × 10 -3* 6.70.4531.4 Si 0.294 Ge 0.706 9.55 × 10 -11 3.20.1810.89 Si 0.269 Ge 0.692 O 0.039 3.12 × 10 -8 3.50.1910.75 Si 0.281 Ge 0.628 O 0.092 < 4.17 × 10 -4* 4.90.3361.1 Si 0.269 Ge 0.579 O 0.152 < 3.62 × 10 -4* 7.30.5771.2 Si 0.427 Ge 0.573 < 5.08 × 10 -10* 2.3 0.1380.89 Si 0.386 Ge 0.599 O 0.015 2.45 × 10 -10 2.60.1550.86 Si 0.425 Ge 0.524 O 0.052 < 4.19 × 10 -9* 3.40.2220.86 Si 0.380 Ge 0.525 O 0.095 < 3.36 × 10 -7* 4.70.3040.83 Si 0.411 Ge 0.421 O 0.168 < 1.30 × 10 -4* 8.70.6580.87 Ge2.07 × 10 -10 3.70.2960.96