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ECEE 302: Electronic Devices

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Presentation on theme: "ECEE 302: Electronic Devices"— Presentation transcript:

1 ECEE 302: Electronic Devices
7 October 2002 Revised: 14 October 2002 ECEE 302: Electronic Devices 1st Examination Review Guide Chapter 1 Crystal Structure Chapter 2 Physical Foundation Chapter 3 Carriers Properties (pages only) Representative Problems 14 October 2002

2 Chp 1 - Crystal Properties
Crystal Structure Lattice Basis Primitive and Unit Cell Basic crystal lattices Simple Cubic Body Centered Cubic Face Centered Cubic Diamond Lattice (Addition) Properties of basic crystal lattices Number of atoms per unit cell close packing fraction Miller Indices and Crystal Directions 14 October 2002

3 Chp 2 - Atoms and Electrons
Photo-electric Effect Bohr Atom and calculation of spectral line frequencies or wavelength Uncertainty principle deBroglie-Einstein Relations Wave Function and Wave Properties Schrodinger Wave Equation Energy Operator Momentum Operator Potential Well Discrete Energy Levels from Boundary conditions Expectation value of an operator Hydrogen Atom Quantum numbers n-Energy quantum number l-angular momentum quantum number m-magnetic quantum number s - electron spin quantum number Pauli Exclusion Principle Structure of the Periodic Table relation of orbital shells with each element building up principle 14 October 2002

4 Chp 3 - Energy Bands and Charge Carriers
Atomic Bonding ionic covalent Band Theory of Solids Band formation (Valance Band and Conduction Band) Metals Insulators Semi-Conductors Direct and Indirect Semiconductors (Energy and momentum transitions) Electrons and Holes (pp 66-70) Charge carriers (Electrons and Holes) Effective Mass (1-dimensional only) intrinsic/extrinsic semi-conductors n-Type and p-Type material Material below this line and on the next page will NOT be covered on Examination 1. 14 October 2002

5 Chp 3 - Energy Bands and Charge Carriers (continued)
Carrier (electron and hole) Concentration Fermi distribution/Fermi Energy Level density of states Calculation of electron and hole concentrations Carrier (electron and hole) Behavior in a Solid Theory of Conductivity Current Density Carrier mobility Hall Effect Invariance of the Fermi Level at Equilibrium 14 October 2002

6 Representative Problems
Chapter 1 1.1, 1.2,1.3,1.8,1.12,1.13,1.14 Chapter 2 2.1(c), 2.2, 2.3, 2.4, 2.5, 2.6, 2.8, 2.9, 2.10, 2.11,2.12 Chapter 3 pp (for this examination) 3.1, 3.9 (a)-only 14 October 2002


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