1. Date of download: 1/3/2018
Copyright © ASME. All rights reserved.
From: Time-Resolved Experimental Study of Silicon Carbide Ablation by Infrared Nanosecond Laser Pulses
J. Manuf. Sci. Eng. 2011;133(2): doi: /
Figure Legend:
Schematic of the experimental system setup

2. Date of download: 1/3/2018
Copyright © ASME. All rights reserved.
From: Time-Resolved Experimental Study of Silicon Carbide Ablation by Infrared Nanosecond Laser Pulses
J. Manuf. Sci. Eng. 2011;133(2): doi: /
Figure Legend:
The laser ablation depth per pulse for silicon carbide (laser wavelength: 1064 nm and total pulse duration: 200 ns)

3. Date of download: 1/3/2018
Copyright © ASME. All rights reserved.
From: Time-Resolved Experimental Study of Silicon Carbide Ablation by Infrared Nanosecond Laser Pulses
J. Manuf. Sci. Eng. 2011;133(2): doi: /
Figure Legend:
The ICCD images of laser SiC ablation process from t=10 ns to 500 ns (the studied laser pulse starts at t=0, fluence per pulse: 57 J/cm2, ICCD gate width is 10 ns for t=10–300 ns, and 20 ns for t=500 ns, and workpiece target surface is located at the bottom of the images)

4. Date of download: 1/3/2018
Copyright © ASME. All rights reserved.
From: Time-Resolved Experimental Study of Silicon Carbide Ablation by Infrared Nanosecond Laser Pulses
J. Manuf. Sci. Eng. 2011;133(2): doi: /
Figure Legend:
The ICCD images of the laser SiC ablation process from t=300 ns to 5000 ns (the ejected liquid is pointed by arrows from t=1000 ns to 5000 ns, laser parameters are the same as Fig. , ICCD gate width is 10 ns for t=300 ns, 20 ns for t=500 ns, 50 ns for t=800–2000 ns, and 100 ns for t=3000–5000 ns, and workpiece surface is located at the bottom of the images)

5. Date of download: 1/3/2018
Copyright © ASME. All rights reserved.
From: Time-Resolved Experimental Study of Silicon Carbide Ablation by Infrared Nanosecond Laser Pulses
J. Manuf. Sci. Eng. 2011;133(2): doi: /
Figure Legend:
The maximum size of ejected liquid cloud during laser SiC ablation (shown in the ICCD image) versus the size of the ejected liquid redeposition zone on the target surface after ablation (shown in the SEM image) (laser fluence per pulse: 57 J/cm2 and the two sizes are consistent with each other)

6. Date of download: 1/3/2018
Copyright © ASME. All rights reserved.
From: Time-Resolved Experimental Study of Silicon Carbide Ablation by Infrared Nanosecond Laser Pulses
J. Manuf. Sci. Eng. 2011;133(2): doi: /
Figure Legend:
A SEM image of the same hole, as that shown in Fig. (generated by laser ablation), at a higher magnification (magnification: ×2000 and scale bar: 10 μm)

7. Date of download: 1/3/2018
Copyright © ASME. All rights reserved.
From: Time-Resolved Experimental Study of Silicon Carbide Ablation by Infrared Nanosecond Laser Pulses
J. Manuf. Sci. Eng. 2011;133(2): doi: /
Figure Legend:
The calculated silicon carbide target temperature (unit: K) distribution at t=160 ns when the target surface temperature reaches the temporal maximum of ∼3963 K (laser fluence per pulse: 11 J/cm2 and target is in the x<0 region with the surface located at x=0)

8. Date of download: 1/3/2018
Copyright © ASME. All rights reserved.
From: Time-Resolved Experimental Study of Silicon Carbide Ablation by Infrared Nanosecond Laser Pulses
J. Manuf. Sci. Eng. 2011;133(2): doi: /
Figure Legend:
The transient front location of laser-induced plasma above the workpiece surface during silicon carbide ablation (laser fluence: 57 J/cm2 and the fitted curve is based on Eq. )