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J. Vaitkus, E.Gaubas, K.Jarasiunas, A.Kadys

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1 J. Vaitkus, E.Gaubas, K.Jarasiunas, A.Kadys
LIFETIME IN HIGHLY IRRADIATED SILICON J. Vaitkus, E.Gaubas, K.Jarasiunas, A.Kadys Institute of Materials Science and Applied Research, Vilnius University, Vilnius, Lithuania, E.Fretwurst Institute of Experimental Physics, Hamburg University, Hamburg, Germany OUTLINE Motivation Free carrier lifetime (trapping time) and diffusitivity measurement by transient grating method Deep centers existence in highly irradiated samples demonstration Lifetime measurement by microwave absorption progress Excess carrier decay temperature variations Comparison with DLTS data in e-irradiated diodes Summary

2 Free carrier lifetime (trapping time) measurement by transient grating method
Il sample I-1 I L I+1 I0

3

4

5 I0 = 0.2 mJ/cm2, grating period   60 m (decay time ~ recombination (trapping) time)

6 Grating period   5 m (diffusion influence).
naudotas gautasis matavimuose su 60 mikronų gardele.

7 Excitation. Si (CE2419). Si (CE2459). Si (CH2259) (mJ/cm2). 1
Excitation Si (CE2419) Si (CE2459) Si (CH2259) (mJ/cm2) cm cm cm-2 D (cm2/s) ( 0.1) ( 0.1) 17.2 ( 0.1) R (ns) > 30 > ( 2) D (cm2/s) 13.6 ( 0.1) 13.1 ( 0.1) 12.5 ( 0.3) R (ns) > 30 > ( 0.3)

8 Generation of carriers via deep centers
Macfarlane, G. G., T. P. McLean, J. E. Quarrington, and V. Roberts, J.Phys.Chem.Solids 8,(1959)

9 Generation of carriers via deep centers
Il sample I-1 I L I+1 I0

10 27 micron grating

11 Integrated MWR module Back side Face side Sample holder
MW bridge Sliding short Holder of neutral intensity filters Fiber or laser mount Gunn oscillator module Integrated MWR module Face side MW bridge Slit antenna or MW cable mount Sliding short Sample holder

12 Integrated MWR module Gunn oscillator module detector chamber
Gunn oscillator chamber MW ventil with load MW circulator detector chamber

13 Thermo-couple Fiber excitation Laser Cryo-chamber MW cable

14

15 Excess carrier decay transients in proton irradiated diodes.
Material: Wacker FZ Si, <100>, 6k cm. Diodes processed: CIS CE O-diff no CIS CH O-diff 75hN2 1150C

16 Decay lifetime dependence on irradiation fluence

17 Thank you for your attention

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