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MOSFET IV Characteristic

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Presentation on theme: "MOSFET IV Characteristic"— Presentation transcript:

1 MOSFET IV Characteristic
MOSFET I-V CHARECTARISTIC MOSFET IV Curves MOSFET Analog/Digital Models & Propagation Delay

2 NMOS & PMOS in Nwell Technology.

3 NMOS & PMOS in Nwell Technology Cnt.

4 NMOS & PMOS in Nwell Technology Cnt.

5 MOSFET I-V CHARECTARISTIC & Models
Lumped Analysis ID=QN/Ttr Vdrift=-mnEy=-mn (VD-VS)/L Ttr=L2/mn*VDS QN =Qn*W*L=Cox*(VG - VT)*W*L IDS=mn* Cox* W/L*(VG-VT) * VDS

6 MOFET IV Curves

7 IV Spice model level 2, Triode.

8 IV Spice model level 2, Triode, Cnt.

9 IV Spice model level 2, Triode, Cnt.
Things to remember: a) Generalization of ohm: J=sE, s=qmn’=r-1 effective sheet resistance=dR = (mQ(y))-1 * dy/W, then dV(y)=Id * dR b) Assumptions (valid for long channel): Gradual channel: dE/dy <<dE/dx i.e. one dimensional model in respect to E fields. Ld << L (Leff=~L) (uniform Depletion charge). Charge flow threw DS only (N+ & inversion regions).

10 IV level 2, Saturation, Pinch off behavior

11 Analog Model=> Max Bandwidth

12 Digital Model=> Max Working frequency.
2

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