1. HPM Effects in Advanced Electronics
J. Rodgers, M.A. Holloway, T. M. Firestone, V. L. Granatstein
Institute for Research in Electronics and Applied Physics University of Maryland College Park, MD 20742 .
Contact info:
Motivation
EM Effects Models for Microelectronic devices
Developing Accurate Scalable Models for HPM effects in Microelectronic Systems
The goal of this research is to:
Indentify the mechanisms responsible effects in microelectronics
Characterized effects at the device and system level
Develop scalable models for predicting RF effects in microelectronic systems
Use the results as a basis for the development of more effective HPM waveforms
Physical Layout of ESD Protection Device
Previous work entailed direct RF injection into individual devices
We will test full microelectronic systems to create accurate scalable effects models – Using the Common PC
Determine whether wide band wave forms are more effective than narrow band ones
Develop a novel wideband test source
Identify vulnerabilities
Determine which common circuit topologies have low susceptibility thresholds
Determine how effective is ECC in the presence of RF disruption
Input Pad
Multi-finger Junctions
Current Effort: Development of Novel Wideband Test Sources
Typical Operating Parameters
Pout MW
Vbeam
40 kV
Ibeam
30 A
Freq.
MHz
Spectrum
Chaotic chirp/hop
Self focused beam (Bz=0)
Model of Drain-Bulk Diode in CMOS
Results of HPM effects experiments
Diffusion Model
Chaotic time delayed oscillator with a Helix slow wave structure
Due to nonlinearity in the junction capacitance of the ESD protection device, resonant frequencies change with input bias
Ring Bar Slow Wave Structure
Comparison of measured and simulated response using model parameters extracted from small-signal measurements
Examples of Effects in Advanced CMOS
Knowing the device parameters, the circuit model has excellent prediction power
Prompt State Error
Oscillations
High-speed CMOS Logic
Advanced Low-voltage CMOS
Ring bar structures tend to have higher coupling impedance over a larger bandwidth
Chaotic oscillations produce high instantaneous spectral density over a wide bandwidth
Example of the band of resonant frequencies in a typical electronic system
Bias Shift & Persistent Latching
Instability
I/O
Logic
System Controller
CPU
Memory
Summary
We have identified the primary mechanisms whereby HPM upsets microelectronics. Using the results we have developed an accurate model for predicting effects in devices. We are currently working on conducting experiments on a whole systems (the common PC) and the development of novel effects test sources.
View of the IC layout on the motherboard of a programmable LAN switch
Results from measurements of parasitic resonances in a typical