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ENEE 303 4th Discussion.

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1 ENEE 303 4th Discussion

2 Contents Common Emitter Amplifier BJT and MOSFET Current Mirrors

3 BJT: Hybrid-𝝅 Equivalent Circuit
From signal point of view, BJT behaves as voltage-controlled current source. Accepts 𝑣 𝑏𝑒 between base and emitter Provides current 𝑖 𝑐 at the collector Input resistance is high but finite Output resistance is high 𝐴 𝑣 =βˆ’ 𝑅 𝐢 𝑔 π‘š 𝐴 𝑣 =βˆ’ 𝑅 𝐢 βˆ₯ π‘Ÿ π‘œ 𝑔 π‘š Small-signal models for the BJT: (a) neglecting the dependence of iC on vCE in saturation (the Early effect) and (b) including the Early effect ENEE 303 Fall 2017

4 Analysis of Transistor Amplifier Circuits
Eliminate the signal source and determine the dc operating point of the transistor. Calculate the values of the parameters of the small-signal model. Eliminate the dc sources by replacing each dc voltage source by a short-circuit and each dc current source by an open- circuit. Replace the transistor with one of its small-signal equivalent circuit models. Analyze the circuit to determine the desired quantities. ENEE 303 Fall 2017

5 Characterizing Amplifiers
Input resistance 𝑅 𝑖 ≑ 𝑣 𝑖 𝑖 𝑖 Output resistance 𝑅 π‘œ ≑ 𝑣 π‘₯ 𝑖 π‘₯ Open-circuit voltage gain 𝐴 π‘£π‘œ ≑ 𝑣 π‘œ 𝑣 𝑖 𝑅 𝐿 =∞ Amplifier voltage gain 𝐴 𝑣 ≑ 𝑣 π‘œ 𝑣 𝑖 𝐴 𝑣 = 𝐴 π‘£π‘œ 𝑅 𝐿 𝑅 𝐿 + 𝑅 π‘œ Overall voltage gain 𝐺 𝑣 ≑ 𝑣 π‘œ 𝑣 𝑠𝑖𝑔 𝐺 𝑣 = 𝑅 𝑖𝑛 𝑅 𝑖𝑛 + 𝑅 𝑠𝑖𝑔 𝐴 π‘£π‘œ 𝑅 𝐿 𝑅 𝐿 + 𝑅 π‘œ ENEE 303 Fall 2017

6 Example: CE Amplifier Calculate voltage gain given b = 100.
Determine bias point Determine small signal model parameters ENEE 303 Fall 2017

7 The Common-Emitter (CE) Amplifier Configuration
moderate to low in value (typically kW); can be increased by lowering the bias current IC but this lowers the gain; for higher Rin need to modify this configuration moderate to high in value (typically kW); can be reduced by lowering RC but this lowers the gain; for lower Ro emitter-follower configuration is needed Avo = -gm (Rc||ro), no vpi If RL is connected to the output, then And the overall gain is, ENEE 303 Fall 2017

8 The CE Amplifier with Emitter Resistance
Re substantially increases the input resistance Ro is unchanged, The open-circuit voltage gain is, Avo is reduced by 1 + gmRe If RL is connected to the output, then And the overall gain is, ENEE 303 Fall 2017

9 Summary: BJT Amplifiers
Emitter Follower (Common Collector) ENEE 303 Fall 2017

10 The Basic MOSFET Current Mirror
The drain current of Q1 is supplied by VDD through resistor R which in most cases is located outside of the IC chip. If one considers transistor Q2, it is realized that it has VGS identical to Q1 . The head of the circuit is transistor Q1, the drain of which is shorted to the gate, thereby forcing it to operate in saturation mode. The output current is related to the reference current by the aspect ratio of the transistors. ENEE 303 Fall 2017

11 MOS Current-Steering Circuits
Once a constant current has been generated, it can be replicated to provide dc bias or load current for the various stages of the amplifier in an IC. Current mirrors can be used to achieve this goal. Q1 and R determine IREF To keep the transistors in saturation, ENEE 303 Fall 2017

12 Example: MOSFET Current Mirror
For the circuit below, let 𝑉 𝐷𝐷 = 𝑉 𝑆𝑆 =1.5 V, 𝑉 𝑑𝑛 =0.6 V, 𝑉 𝑑𝑝 =βˆ’0.6 V, all channel lengths =1πœ‡m, π‘˜ 𝑛 β€² =200 πœ‡A V 2 , π‘˜ 𝑝 β€² =200 πœ‡A V 2 , and πœ†=0. For 𝐼 𝑅𝐸𝐹 =10 πœ‡A, find the widths of all transistors to obtain 𝐼 2 =60 πœ‡A, 𝐼 3 =20 πœ‡A, and 𝐼 5 =80 πœ‡A. It is further required that the voltage at the drain of 𝑄 2 be allowed to go down to within 0.2 V of the negative supply and that the voltage at the drain of 𝑄 5 be allowed to go up to within 0.2 V of the positive supply. ENEE 303 Fall 2017

13 Example: MOSFET Current Mirror
ENEE 303 Fall 2017

14 Example: MOSFET Current Mirror
ENEE 303 Fall 2017

15 Basic BJT Current Mirror Circuit
It works in a fashion very similar to the MOS mirror. However, with two important differences: The non-zero bias current causes an error in current mirroring (magnitude of current conducted). The current transfer ratio is determined by the relative areas of the emitter-based junctions of Q1 and Q2. ENEE 303 Fall 2017

16 Basic BJT Current Mirror Circuit
Assume 𝛽=∞ 𝐼 𝑅𝐸𝐹 = 𝐼 𝐢1 𝐼 π‘œ = 𝐼 𝐢2 𝑖=0 𝐼 𝐢1 = 𝐼 𝑆1 𝑒 𝑣 𝐡𝐸 𝑉 𝑇 𝐼 𝐢2 = 𝐼 𝑆2 𝑒 𝑣 𝐡𝐸 𝑉 𝑇 Since 𝑉 𝐡𝐸 is the same for 𝑄 1 and 𝑄 2 , 𝐼 π‘œ 𝐼 𝑅𝐸𝐹 = 𝐼 𝑆2 𝐼 𝑆1 =π‘š= π΄π‘Ÿπ‘’π‘Ž π‘œπ‘“ 𝐸𝐡𝐽 π‘œπ‘“ 𝑄 2 π΄π‘Ÿπ‘’π‘Ž π‘œπ‘“ 𝐸𝐡𝐽 π‘œπ‘“ 𝑄 1 ENEE 303 Fall 2017

17 Basic BJT Current Mirror Circuit
Assume both have the same finite 𝛽. 𝐼 𝐢2 = 𝐼 π‘œ 𝐼 𝑅𝐸𝐹 = 𝐼 𝐢1 + 𝐼 𝐡 𝐼 𝐡 = 𝐼 𝐡1 + 𝐼 𝐡2 𝐼 𝐢1 = 𝐼 𝑆1 𝑒 𝑣 𝐡𝐸 𝑉 𝑇 𝐼 𝐢2 = 𝐼 𝑆2 𝑒 𝑣 𝐡𝐸 𝑉 𝑇 𝐼 𝐡1 𝐼 𝐡2 𝐼 𝐡1 = 𝐼 𝐢1 𝛽 𝐼 𝐡2 = 𝐼 𝐢2 𝛽 𝐼 𝐸1 = 𝐼 𝐢 𝛽 𝐼 𝐸2 = 𝐼 𝐢 𝛽 Since 𝑉 𝐡𝐸 is the same for 𝑄 1 and 𝑄 2 , 𝐼 π‘œ 𝐼 𝑅𝐸𝐹 = π‘š 1+ π‘š+1 𝛽 , π‘š= 𝐼 𝑆2 𝐼 𝑆1 ENEE 303 Fall 2017

18 Basic BJT Current Mirror Circuit
If the Early effect is included, 𝐼 π‘œ 𝐼 𝑅𝐸𝐹 = π‘š 1+ π‘š+1 𝛽 𝑉 π‘œ βˆ’ 𝑉 𝐡𝐸 𝑉 𝐴2 ENEE 303 Fall 2017

19 Example: BJT Current Mirror
Assume the availability of BJTs with scale currents 𝐼 𝑆 = 10 βˆ’15 A, 𝛽=100, and 𝑉 𝐴 =50 V, design the current-source circuit below to provide an output current 𝐼 π‘œ =0.5 mA at 𝑉 π‘œ =0.2 V. The power supply 𝑉 𝐢𝐢 =5 V. Give the values of 𝐼 𝑅𝐸𝐹 , 𝑅, and 𝑉 π‘‚π‘šπ‘–π‘› . Also, find 𝐼 π‘œ at 𝑉 π‘œ =5 V. (Q1 & Q2 are the same) ENEE 303 Fall 2017

20 Example: BJT Current Mirror
ENEE 303 Fall 2017

21 Example: BJT Current Mirror 2
For the circuit below, let 𝑉 𝐡𝐸 =0.7 V and 𝛽=∞. Find 𝐼, 𝑉 1 , 𝑉 2 , 𝑉 3 , 𝑉 4 , and 𝑉 5 for (a) 𝑅=10 kΞ© and (b) 𝑅=100 kΞ©. ENEE 303 Fall 2017

22 Example: BJT Current Mirror 2
ENEE 303 Fall 2017

23 Example: BJT Current Mirror 2
ENEE 303 Fall 2017


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