1. Fig. 1 from Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory (Image 1 of 2)
Satoshi Takaya et al 2017 Jpn. J. Appl. Phys CN07 doi: /JJAP.56.04CN07

2. Fig. 1 from Long-term reliable physically unclonable function based on oxide tunnel barrier breakdown on two-transistors two-magnetic-tunnel-junctions cell-based embedded spin transfer torque magnetoresistive random access memory (Image 2 of 2)
Satoshi Takaya et al 2017 Jpn. J. Appl. Phys CN07 doi: /JJAP.56.04CN07