1. Date of download: 10/14/2017
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From: Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
J. Appl. Mech. 2014;81(9): doi: /
Figure Legend:
Processing schematics for the patterned structure with mask–dielectric ridges

2. Date of download: 10/14/2017
Copyright © ASME. All rights reserved.
From: Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
J. Appl. Mech. 2014;81(9): doi: /
Figure Legend:
Tilted SEM images of the patterned structures with or without ridge wiggling: (a) Exp. 2, (b) Exp. 6, and (c) Exp. 8

3. Date of download: 10/14/2017
Copyright © ASME. All rights reserved.
From: Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
J. Appl. Mech. 2014;81(9): doi: /
Figure Legend:
Schematics of the bilayer model, considering a single ridge fixed at a substrate: (a) an overview of the model and (b) two side-views of the model

4. Date of download: 10/14/2017
Copyright © ASME. All rights reserved.
From: Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
J. Appl. Mech. 2014;81(9): doi: /
Figure Legend:
Schematics of the dry-etching model

5. Date of download: 10/14/2017
Copyright © ASME. All rights reserved.
From: Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
J. Appl. Mech. 2014;81(9): doi: /
Figure Legend:
Stability diagram of the bilayer model, showing the change in κ, with the Λc-curve superimposed on the qc2–curve

6. Date of download: 10/14/2017
Copyright © ASME. All rights reserved.
From: Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
J. Appl. Mech. 2014;81(9): doi: /
Figure Legend:
Comparison of Λc-curve and Λetch-curve with change in κ, calculated using the etching conditions listed in Table 3. The dashed curves indicate the calculated Λc-curve with identical conditions as shown in Fig. 5. The filled circles are the observation points that correspond to the experimental data in Table 3.

7. Date of download: 10/14/2017
Copyright © ASME. All rights reserved.
From: Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
J. Appl. Mech. 2014;81(9): doi: /
Figure Legend:
Shifting of the onset of buckling for Exp. 6: (a) the increase in Ed and (b) the increase in rm/rd

8. Date of download: 10/14/2017
Copyright © ASME. All rights reserved.
From: Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
J. Appl. Mech. 2014;81(9): doi: /
Figure Legend:
Cross-sectional drawing of a FEM model. The profile of the patterned structure corresponds to Exp. 2.

9. Date of download: 10/14/2017
Copyright © ASME. All rights reserved.
From: Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
J. Appl. Mech. 2014;81(9): doi: /
Figure Legend:
Center view of the computed buckling modes of the two ridges on a elastic substrate: (a) coordinate-phase for the two ridges, φ0 degap and φ90 degap, and (b) antiphase for the two ridges, φ0 degap and φ90 degap. Each contour figure shows the y-displacements of the substrate surface (z–x plane). The dashed curves superposed on each contour figure show the upper undulations of the two ridges. The threshold of each contour bar is normalized to the maximum displacement amplitude of each dashed undulation.

10. Date of download: 10/14/2017
Copyright © ASME. All rights reserved.
From: Onset of Wiggling in a Microscopic Patterned Structure Induced by Intrinsic Stress During the Dry Etching Process
J. Appl. Mech. 2014;81(9): doi: /
Figure Legend:
(a) and (b) schematics of the wiggling patterns of two parallel ridges on an elastic substrate, expressed by Eq. (29). The wiggling patterns in the insets correspond to changes in (a) θ0 = 0,π/8,π/4,3π/8,π/2 at θ1 = θ2 = 0, and (b) θ1 = 0,π/4,π/2,3π/4,π at θ0 = π/4 and θ2 = 0. (c) The y-displacements of the substrate surface for the superposition of the two buckling modes, φ0 degcp and φ0 degap (see Fig. 9), which corresponds to the case of θ0 = π/4 and θ1 = θ2 = 0 in Eq. (29). The range of values in the contour bar is consistent with that in Fig. 9(a).