1. ACTIVE LEARNING ASSIGNMENT AVS (2151101) 130800111002-Malani Bipin 130800111003-Pandit Vishva 130800111004-Parmar Collate G

2.  CONTENT  Ideal op-amp  Equivalent circuit  Open loop circuit  Inverting amplifier  Non inverting amplifier  Differential amplifier IDEAL OP-AMP, IT’S EQUIVALENT CIRCUIT& OPEN LOOP CIRCUIT

3.  Operational amplifier (Op-amp) is made of many transistors, diodes, resistors and capacitors in integrated circuit technology.  IC- 741 OP AMP.

4. EQUIVALENT CIRCUIT OF AN IDEAL OP AMP.

5. An ideal op amp has the following characteristics: 1.Infinite voltage gain, A V ≈ ∞. 2.Infinite input resistance, R i ≈ ∞. 3.Zero output resistance, R o ≈ 0. 4.Infinite CMRR, ρ =∞ 5.The output voltage Vo=0; when V d = V 2 -V 1 = 0 6.Change of output with respect to time, slew rate = ∞ CHARACTERISTICS.

6. INVERTING AMPLIFIER

7. NON INVERTING AMPLIFIER

8. DIFFERETIAL AMPLIFIER

9.  Open loop configuration normaly doesn’t used in linear applications  Because the output gets switched b/w the positive and negative saturation levels, So these increase the threat of distortion. APPLICATIONS

10. INVERTING AMPLIFIER

11. NON INVERTING AMPLIFIER

12. DIFFERETIAL AMPLIFIER

13.  Comparator  The schmitt trigger amplifier  Half wave rectifier  High gain amplifier

14. What Are Diodes Made Out Of? Silicon (Si) and Germanium (Ge) are the two most common single elements that are used to make Diodes. A compound that is commonly used is Gallium Arsenide (GaAs), especially in the case of LEDs because of it’s large bandgap.Silicon (Si) and Germanium (Ge) are the two most common single elements that are used to make Diodes. A compound that is commonly used is Gallium Arsenide (GaAs), especially in the case of LEDs because of it’s large bandgap. Silicon and Germanium are both group 4 elements, meaning they have 4 valence electrons. Their structure allows them to grow in a shape called the diamond lattice.Silicon and Germanium are both group 4 elements, meaning they have 4 valence electrons. Their structure allows them to grow in a shape called the diamond lattice. Gallium is a group 3 element while Arsenide is a group 5 element. When put together as a compound, GaAs creates a zincblend lattice structure.Gallium is a group 3 element while Arsenide is a group 5 element. When put together as a compound, GaAs creates a zincblend lattice structure. In both the diamond lattice and zincblend lattice, each atom shares its valence electrons with its four closest neighbors. This sharing of electrons is what ultimately allows diodes to be build. When dopants from groups 3 or 5 (in most cases) are added to Si, Ge or GaAs it changes the properties of the material so we are able to make the P- and N-type materials that become the diode.In both the diamond lattice and zincblend lattice, each atom shares its valence electrons with its four closest neighbors. This sharing of electrons is what ultimately allows diodes to be build. When dopants from groups 3 or 5 (in most cases) are added to Si, Ge or GaAs it changes the properties of the material so we are able to make the P- and N-type materials that become the diode. Si+4Si+4Si+4 Si+4Si+4Si+4 Si+4Si+4Si+4 The diagram above shows the 2D structure of the Si crystal. The light green lines represent the electronic bonds made when the valence electrons are shared. Each Si atom shares one electron with each of its four closest neighbors so that its valence band will have a full 8 electrons.

15. REFERENCES  Op-amp & linear integrated circuits,Ramakant Gayakwad.  “Operational Amplifier.” http://en.wikipedia.org/wiki/Operational_amplifier. http://en.wikipedia.org/wiki/Operational_amplifier  “Operational Amplifier Applications.” http://en.wikipedia.org/wiki/Operational_amplifier_ applications. http://en.wikipedia.org/wiki/Operational_amplifier_ applications

16. What Are Diodes Made Out Of? Silicon (Si) and Germanium (Ge) are the two most common single elements that are used to make Diodes. A compound that is commonly used is Gallium Arsenide (GaAs), especially in the case of LEDs because of it’s large bandgap.Silicon (Si) and Germanium (Ge) are the two most common single elements that are used to make Diodes. A compound that is commonly used is Gallium Arsenide (GaAs), especially in the case of LEDs because of it’s large bandgap. Silicon and Germanium are both group 4 elements, meaning they have 4 valence electrons. Their structure allows them to grow in a shape called the diamond lattice.Silicon and Germanium are both group 4 elements, meaning they have 4 valence electrons. Their structure allows them to grow in a shape called the diamond lattice. Gallium is a group 3 element while Arsenide is a group 5 element. When put together as a compound, GaAs creates a zincblend lattice structure.Gallium is a group 3 element while Arsenide is a group 5 element. When put together as a compound, GaAs creates a zincblend lattice structure. In both the diamond lattice and zincblend lattice, each atom shares its valence electrons with its four closest neighbors. This sharing of electrons is what ultimately allows diodes to be build. When dopants from groups 3 or 5 (in most cases) are added to Si, Ge or GaAs it changes the properties of the material so we are able to make the P- and N-type materials that become the diode.In both the diamond lattice and zincblend lattice, each atom shares its valence electrons with its four closest neighbors. This sharing of electrons is what ultimately allows diodes to be build. When dopants from groups 3 or 5 (in most cases) are added to Si, Ge or GaAs it changes the properties of the material so we are able to make the P- and N-type materials that become the diode. Si+4Si+4Si+4 Si+4Si+4Si+4 Si+4Si+4Si+4 The diagram above shows the 2D structure of the Si crystal. The light green lines represent the electronic bonds made when the valence electrons are shared. Each Si atom shares one electron with each of its four closest neighbors so that its valence band will have a full 8 electrons.

17. THANK YOU