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InP based Photonic Integration Deepak Gajanana, Martin van Beuzekom Nikhef (National Institute for Subatomic Physics), Amsterdam Xaveer Leijtens Eindhoven.

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Presentation on theme: "InP based Photonic Integration Deepak Gajanana, Martin van Beuzekom Nikhef (National Institute for Subatomic Physics), Amsterdam Xaveer Leijtens Eindhoven."— Presentation transcript:

1 InP based Photonic Integration Deepak Gajanana, Martin van Beuzekom Nikhef (National Institute for Subatomic Physics), Amsterdam Xaveer Leijtens Eindhoven University of Technology, Eindhoven 10-12-20121D. Gajanana et. al.

2 Contents D. Gajanana et. al.210-12-2012 1. Introduction 2. Generic Integration Technology (InP) ◦Example photonic ICs ◦Application in HEP experiments

3 D. Gajanana et. al.310-12-2012 Why Indium Phosphide Photonic ICs? InP can support a wide range of photonic devices ◦Light generation/amplification/detection/modulation ◦Bandgap engineering around λ~1550 nm ◦1550 nm wavelength has lower dispersion and attenuation in fibers. Increasingly mature technology Increasing circuit complexity available Component count commercial

4 Generic Integration Technology D. Gajanana et. al.410-12-2012 SOA (gain sections) Shallow etched waveguide Deep etched waveguide Electrical isolation section Phase modulator Waveguides are ~ 2um wide and a um high Phase change is brought by applying an electric field and changing the refractive index Minimum resolution in COBRA process ~ 100 nm

5 Photonic Integration with basic building blocks D. Gajanana et. al.510-12-2012

6 Photonic IC Generic Integration platform D. Gajanana et. al.610-12-2012 optical amplifier phase modulator PhaseAmplitude polarization converter Polarization waveguide Passive New design Powerful layout tools Powerful circuit simulation tools Designs from designers using the same platform Application Photonics Design Manual A designer Multi-project wafer Device back to users Wafer fab

7 EUROPIC ASPICs D. Gajanana et. al.710-12-2012 ASPIC 1: Brillouin strain sensor readout chip ASPIC 2: Fibre Brag Grating strain sensor readout chip ASPIC 3: Pulse serialiser for KM3NeT Neutrino Telescope ASPIC 4: Fast 4x4 switching matrix ASPIC 5a: WDM-transmitter for FTTH ASPIC 5b: WDM-receiver for FTTH ASPIC 6: Variable repetition rate pulse laser ASPIC 8: Tunable laser with integrated 10 Gb/s MZI modulator ASPIC 9: Pulse shaper for bio-imaging Oclaro HHI Oclaro HHIOclaro http://europic.jeppix.eu/ http://paradigm.jeppix.eu/

8 Application Areas D. Gajanana et. al.810-12-2012 Telecomms - main driver for PIC development ◦Transmitters and Receivers ◦Access networks / FTTH ◦Many other optical functions: Data encoders/decoders, wavelength (de-)multiplexers, regeneration…… ◦Fast photonic switches – photonic interconnect in computer backplanes Fibre Sensors ◦Integrated measurement modules for fiber Bragg sensors ◦Readout chips for sensors based on strain using Brillouin backscattering Medical ◦Optical coherence tomography at ~1.55 m ◦Raman scatterometry ◦Non-linear microscopy using short pulse lasers Structural health monitoring Multi-photon microscopy High-speed telecom Computer backplane

9 Integrated Optical Serializer concept for KM3NeT - Stanislaw Stopinski D. Gajanana et. al.910-12-2012 Output signal: Digital Single λ 4 Gb/s (4-channel system) 32 Gb/s (32-channels system) PMT array 1 0 1 1 Input signal: Optical pulse train Single λ Repetition rate: 1 GHz Pulse duration: 250 ps (4-channel system) Pulse duration: 31.25 ps (32-channel system) 100 km Shore

10 Pulse Serialiser for KM3NeT -Stanislaw Stopinski D. Gajanana et. al.1010-12-2012 DEEP SEA NEUTRINO TELESCOPE 186.000 detectors, 186 Tb/s output data) 2 x 6 mm Serializer chip: 32 Gb/s output, 12.65 dB ER

11 ASPICs for High Energy Physics Experiments D. Gajanana et. al.1110-12-2012 Modulators form the heart of the external modulation technique. Radiation hardness of modulators are not known for the desired total doses at HL LHC. Optical modulator continuous wave injection laser Photo diode Amplification Digital read-out Chip @ 10Gb/s Modulation Detector – High Radiation environment Low radiation Data acquisition & processing CW Laser Data InP Metal Data arm Databar arm Laser input Light output Mach Zehnder (MZ) Modulator

12 Beam Test of InP based MZ modulators D. Gajanana et. al.1210-12-2012 Samples mounted in a shuttle that moves in and out of the 24 GeV/c proton beam at CERN Samples were irradiated to 10 12, 10 13, 10 14 and 10 15 p/cm 2. HL LHC doses are 10 16 p/cm 2 with total ionising dose to be ~500 Mrad at 7mm from the beam. Sample dimensions : 14 mm × 4 mm Submount dimensions : 48 mm × 42 mm

13 Measurements of photonic chips D. Gajanana et. al.1310-12-2012 Measurements need precision alignment of chips and fibers. Lensed fibers are used to couple and collect light. Alignment of fibers are done manually using manipulators. Bond wire Lensed fiber (9 u core) to be aligned to a 2 u wide 1u high waveguide.

14 ASPIC #04_02 design in COBRA6 MPW run D. Gajanana et. al.1410-12-2012 Modulator WDM based Modulator chip (De-)Multiplexer Amplifier

15 What is your photonic application ? 10-12-2012D. Gajanana et. al.15

16 Irradiated and Non-Irradiated Sample measurements D. Gajanana et. al.1610-12-2012 Input power = + 6dBm @ 1550nm Y axis – Power (dBm) measured at the output. X axis – Voltage scan on one of the arms of the modulator. Attenuation at zero bias = 7 dB No phase behaviour! InP Metal Data arm Databar arm Laser input Light output Imbalance PD

17 Two main types of modulators Absorptive modulators ◦Absorption coefficient of the material in the modulator can be manipulated by the Franz-Keldysh effect (bulk semiconductors), the Quantum-confined Stark effect (InP QW, QDs), excitonic absorption, changes of Fermi level, or changes of free carrier concentration (bulk Si, InP). Refractive modulators. ◦make use of an electro-optic effect like Pockels effect (linear EO effect) (LiNbO 3, GaAs), Kerr effect (quadratic EO effect) (Nitrobenzene) to change the refractive index. Modulators D. Gajanana et. al.1710-12-2012

18 Packaging of Photonic chips - example D. Gajanana et. al.1810-12-2012 Linkra packaging proposal of the TxRx chip

19 Commercial Operation D. Gajanana et. al.1910-12-2012 Cost of an MPW: 50-100 k€ With 10 designs: 5-10 k € per design For this money you get ~20 chips Cost for your chips: <10 €/mm 2 for small series In PARADIGM there is access for external users: Your application?


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