1. 2008~2014 A Company of Faith and Modesty Sigetronics, Inc. http://www.sigetronics.com TLP System For ESD Test Of Semiconductors 4. TLP Test Results 1.Model and Standard of ESD Test Transmission Line Pulse (TLP) stands for an ESD standard test in semiconductor industry. it is designed as a tool for analysis of ESD characteristics of electronic components, ESD protection devices and circuits. 2. Comparison of ESD Test Methods Zener diode+ GaN LED Bidirectional TVS diodeFast Recovery Diode 5. TLP at CBNU LC-type ESD/EMI filter GaN LED RC-type ESD/EMI filter Location School of Semiconductor and Chemical Engineering, Semiconductor Physics Research Center, Chonbuk National University, Jeonju 561- 756, Republic of Korea. Specifications: - 500 volts to an open DUT and 20 amps through a short. - Pulse rise time : 200ps, 2ns, and 10ns, - Pulse width: 75 ns, 100 ns Contact -Prof. Kyu-Hwan Shim, Email: khshim@jbnu.ac.kr,khshim@jbnu.ac.kr TEL: 063-270-4650, 4164 HP: 010-730-83556 -Mr. Daoheung BOUANGEUNE, Email: bouangeun@gmail.com, HP: 010-5590-2265 Barth Model 4002 TLP A TLP demo system will be available in June 2014 at SPRC(Semiconductor Physics Research Center), ChonBuk National University(CBNU). Anyone who are interested in experiencing the TLP system are welcome to participate this program. The TLP demo system, provided by Barth’s Electronics, is very useful and essential to evaluate the performance of electrostatic discharge(ESD) protection capability for TVS (Transient Voltage Suppression) devices including Zener diode, ABD, ESD/EMI filter, ULC-TVS, TVS arrays, and other semiconductor devices as well. ESD Characterization Machine Model Human Body Model IEC 61000-4-2 Transmission Line Pulse European standard Developed from HBM System ESD test, Real time protection analysis Component Level Test System Level Test HBM/MM/IEC61000-4-2 test methods: ESD performance is evaluated by finding out a minimum strength of ESD pulse that causes substantial damages in a test sample. For example, the ESD robustness is defined when the leakage current of the test sample surpassed a predefined failure level. Therefore, those ESD simulators are used as a black box with a voltage-level stimulus and a simple “pass or fail” response. From I-V characteristics of TLP technology, we can obtain many crucial ESD characteristics: e.g., leakage current, triggering voltage, holding voltage, dynamic resistance, thermal breakdown voltage and maximum peak pulse current. Those properties are essential to choose a best, correct, optimum ESD protection device. 3. ESD Test Example of GaN LEDs and FRDs TLP Pulse generator TLP I-V curve tracer Pulse generator END Maintaining or degradation Fail ESD stress Start I-V measurement Increase ESD Peak Pulse voltage Sample loading Test Procedure for MM/HBM/IEC61000-4-2 Test Procedure for TLP Analysis GaN LED with TVS > ± 30 kV Normal GaN LED damage < ± 3 kV GaN LED with TVS > ± 8 kV Normal GaN LED damage < ± 4 kV Up to 10 strikes of ±3.5 kV Up to 10 strikes of ±5.5 kV HBM IEC61000-4-2 ESD test using HBM and IEC61000-4-2 methods present how much the ESD robustness could be improved for the GaN LEDs assembled with TVS protection devices.