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Activities and Opportunities at the accelerator lab in Bochum H.-W. Becker, NUPECC Small Scale Facilities workshop, 7./8. Sep. 2007.

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Presentation on theme: "Activities and Opportunities at the accelerator lab in Bochum H.-W. Becker, NUPECC Small Scale Facilities workshop, 7./8. Sep. 2007."— Presentation transcript:

1 Activities and Opportunities at the accelerator lab in Bochum H.-W. Becker, NUPECC Small Scale Facilities workshop, 7./8. Sep. 2007

2 Sputter Ion Source I  20 pµA 4MV Dynamitron Tandem Accelerator RUB Ion beam Purification Singlett 60° Dipol magnet  E-E Telescope Doublett Analysing magnet Wien-Filter magnetic Quadrupols Triplett Side FC Wien-Filter 4 He Gas target Recoil Focussing Wien-Filter Recoil Separation Experiment – 12 C( ,  ) 16 O Bochum Recoil Mass Separator ERNA

3 R-Matrix calculation Kunz et al. Ap.J. 567 (2002) 643 E1/E2 Data Stuttgart-Exp. Fey et al. (to be published) Karlsruhe BaF 2 -Ball DRAGON TRIUMF Matei et al. PRL 97 (2006) 242503 new complete R matrix calculation Experiment – 12 C( ,  ) 16 O Bochum Recoil Mass Separator ERNA – Results

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5 Astrophysics with the Summing Crystal  summing over cascades:  4  -Geometry – summing over angular distribution Example: 88 Sr(p,  ) 89 Y (important for p-process) 88 Sr(NO 3 ) 2 -Target

6 Results: A. Spyrou, H.-W. Becker, A. Lagoyannis, S. Harissopulos and C. Rolfs, Phys. Rev. C, in print “seed “ abundances s process p-nuclei abundances p process reaction network The game of understanding p-process abundances

7 High Resolution Depth Profiling with Low Energy Nuclear Resonances: Lewis-peak beam resolution: 30-40 eV total resolution  eV (mainly doppler broadening) 1 nm E p = 417 keV Resonance in 29 Si 20 eV stability: 500 kV machine

8 Investigation of Diffusion Processes in Minerals native sample artificial layer enriched in 29 Si (PLD) Olivin (Fe,Mg) 2 SiO 4

9 High Energy Ion Projection field strength:14 T MxE product: 100 MeV u/q 2 demagnification: 15 mask area: Ø 30 mm resolution (PMMA):0.3  m (0.6 MeV Si)

10 Nitrogen -Vacancy (NV)center fabrication in type IIa diamond 10 5 N10 4 N10 3 N 2 MeV N implantation + annealing 10 µm Approx. 1-2 N iones/ N-V defect Meijer et al. APL 87 (2005)


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