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Developing Power Semiconductor Devices The Efficiency Benefits of SiC for the Price of Si.

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Presentation on theme: "Developing Power Semiconductor Devices The Efficiency Benefits of SiC for the Price of Si."— Presentation transcript:

1 Developing Power Semiconductor Devices The Efficiency Benefits of SiC for the Price of Si

2 Low cost, high intensity LEDs using Anvil’s stress relief IP to grow high quality GaN on 3C-SiC on large diameter Si substrates. The Project The Experience Dos and Don’ts

3 10% of electricity generated is lost through conversion Power Electronics are key to efficient switching and controlling power in all electrical systems Laptops to Smart Grid silicon (Si) <cost, reliable, proven But it is well demonstrated that: silicon carbide (SiC) more efficient, smaller, lighter, systems +7% higher efficiency in consumer products 10% fuel saving – Toyota +5% PV inverter efficiency But today….. SiC devices are too expensive – 10xSi Anvil’s patented IP delivers Silicon carbide performance for the price of silicon Anvil’s technology and business

4 Bulk 4H-SiC Wafer 4H-SiC Epitaxy Device Fabrication Si Wafer 3C-SiC Epitaxy Device Fabrication Wafer cost: $1000 Fabrication needs specialised equipment Wafer cost: $30 Anvil IP prevents bowing and enables device quality material Standard 4H-SiC device fabrication Anvil 3C-SiC device fabrication Fabricating devices in SiC Fabrication using mainly Si equipment  Anvil’s IP overcomes stress due to lattice mismatch and differential thermal expansion  Market for SiC Power Devices >$4Bn by 2020

5 Bulk 4H-SiC Wafer $1000 GaN LED Fabrication Si Wafer $30 GaN LED Fabrication LED Substrate Si with Anvil 3C-SiC LEDs inefficient complex interface layers to overcome lattice mismatch high number of dislocations Bulk Sapphire Wafer GaN High number of dislocations LED Fabrication LEDs more efficient but expensive reduced dislocations as less lattice mismatch bulk wafer very expensive 4H-SiC LED’s cheaper but less efficient lower cost wafer extremely complex interface layer and process to overcome differential thermal expansion and lattice mismatch Si Today only 1% Si Wafer $30 3C-SiC Epitaxy Anvil IP - LEDs cheaper and efficient lower cost wafer enables growth of cubic GaN giving more efficient LEDs and more colours GaN (Cubic) LED Fabrication SAPPHIRE

6 Application Simple - o At the time – 4 questions, 4 month project, £33k o Now – standard Innovate UK 10 questions, 6-15 month project, £50-150k. Single company, no partners but subcontractor o Justify use of subcontractor Response / feedback Very quick Time to start – always longer than you anticipate. o Fixed start date o No need for collaboration agreement – normally the hold up If unsuccessful – detailed feedback The Experience - Application

7 The Experience – During the project Working on the project / reporting Very short and straight forward o No technical issues, successful outcome o 4 months, 2 claims, 2 reports Financial reporting / claims on line – very easy o Error in offer letter finances so had to go through Virement process Monitoring officer very good, relationship important Finishing Final Report o Fixed format No financial audit – all self certification Collaboration Nation o 3 minute presentation from everyone (40 projects) o Networking opportunity

8 The Challenge The use of cubic GaN-on-Si wafers enables high efficiency, low cost LEDs Cubic GaN never been produced using commercialisable process Can Anvil’s cubic SiC-on-Si be used to grow cubic GaN-on-Si? The Market Opportunity LED market $12.4Bn today, f/c to be $17bn by 2018 Substrate market $4Bn GaN-on-Si LEDs f/c to take 45% of market C-GaN-on-Si much more efficient Next Steps Continue to develop material and fabricate demonstration LEDs Looking for a strategic partner, major LED manufacturer, to commercialise technology. The Project Results Cubic GaN grown on Anvil’s cubic SiC-on-Si wafers The first ever cubic GaN grown using process suitable for commercial production Collaboration Nation

9 Dos and Don’ts Do answer the questions in the application form / guidance document directly with headings Don’t just include the information somewhere in the text Do keep below £100k / applicant to avoid initial audit Do get collaboration agreement sorted out early on Do read the offer letter and financial details to check they are correct - it’s easier to get it sorted out before you start Do keep good records so it is easy to report / claim Also useful for R&D tax credits Do keep your Monitoring Officer informed – they can be very helpful Don’t be frightened by the online reporting / claims – it’s very straight forward Do make claims on time If you are unsuccessful feedback very useful Use it to see where you are not answering the question Don’t expect to get the same responses second time around


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