Electric Double Layer Formation at Metal/Organic Interface Muttaqin 1 July 2009

Overview :

Motivation : Organic materials especially polymers are future materials due to their flexibility, highly conductivity, easily fabricated and fashioned. By knowing alignment interface energy between Metal and organic layers one can design a device for better performance.

Outline: Introduction - Metal / Organic Interface - Factors which influence the interfaces Experiment Result Summary References

Introduction : Helmholzt Model Surface charges are netralized by the counter ions Peter Atkins,Julio de Paula. Physical chemistry, 7th ed, Oxford 1

Gouy-Chapman Model Introduction : Gouy-Chapman Model  Planar double layer  Ions as point charges  Poisson equation Peter Atkins, Julio de Paula. Physical chemistry, 7th ed, Oxford 1

Stern (1924) Model Introduction : Stern (1924) Model H-J. Butt, et all. Physics and Chemistry of Interfaces, WILEY-VCH 2

Introduction : Solid / Solid Interfaces H. Ishii, et all. Adv. Mater. 1999, 11, No.8 3

Interfacial energy diagram Workfunction Dipole moment layer Metal/Organic Vacuum level (VL) shift,  H. Ishii, et all. Adv. Mater. 1999, 11, No.8 3

Experiment : Data from Ilja Langel.Neher Group, Uni-Potsdam 4

Experiment : Data from Ilja Langel.Neher Group, Uni-Potsdam 4

Summary : 1. Electric double layer consist of an inner Stern or Helmholtz layer and a diffuse layer or Gouy- Chapman layer 2. Electric double layer formation at metal/organic give many application in EL Devices 3. Metal/organic interfaces will play important applications in the future molecular devices

Refference 1. P. Atkins, J. D. Paula. Physical Chemistry, 7 th ed, Oxford 2. H.J.Butt, K. Graf, M. Kappl. Physic and Chemistry of Interfaces. Copyright  2003, Wiley-VCH Verlag & Co. KGaA 3. H. Ishii, et all. Energy Level Alignment and Interfacial Electronic Structures at Organic/Metal and Organic Interfaces. Adv. Matr. 1999, 11, No.8 4. Data from Ilja Lange, Neher Group, Uni-Potsdam 5. H.Ishii, et all. Kelvin probe study band bending at organic semiconductor/metal interfaces : Examination of Fermi level alignment. Phys.stat. Sol. (a) 201, No. 6 (2004) /

Thank to : 1. Ilija Lange - For his time to help me finishing this presentation (tolong dilengkapi dengan kata2 yg lebih bagus) 2. Chemistry PC-Pool - Where I search suitable topic for my presentation (tambahin juga yaaaa)