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Author: Egon Pavlica Nova Gorica Polytechic Comparision of Metal-Organic Semiconductor interfaces to Metal- Semiconductor interfaces May 2003
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● Introduction to Organic Semiconductors ● Inorganic Semiconductor surfaces ● Metal-Inorganic Semiconductor interfaces ● Metal-Organic Semiconductor interfaces ● Conclusion Contents:
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Organic Semiconductors ● Small Organic Molecules ● Polymers AFM (200x200nm) PTCDA polycrystalinic structure on Si(100) Small molecule example:
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Organic Semiconductors Polymer example: SEM of Polyaniline thin film deposited in vacuum on mica, silicon and mcroporous silicon
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Organic Semiconductors Electronic Polarization cloud - Electronic polaron
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Organic Semiconductors Molecular polaron Lattice polaron
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Energy diagram of dinamic polaron states in anthracene type crystals Organic Semiconductors
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Space-Charge Layers Tight-binding model: - smaller overlap integral - surface state levels - donor states: empty positive - acceptor states: full negative - generally states are mixed
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Space-Charge Layers Charge neutrality Depletion layer Acceptor states
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Space-Charge Layers Depletion: - low major carr.conc. Inversion: - high minor carr.conc. Accumulation: - high Ds states - free charge
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Band Bending due to Space-Charge
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Schottky Depletion Space-Charge Layer Band bending V(surface)>>kT Approximation of space charge density Electric field Electric potential energy Band bending:
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Band bending - Inorganic semiconductors Weak space-charge layer Strong space-chare layer Schottky layer Calculated band bending due to acceptor/donor surface state level for GaAs
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Ideal* Metal-Inorganic Semiconductor *known as Schottky model
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Ideal Metal-Inorganic Semiconductor
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Bardeen model Facts: ● Metal atoms in close contact with semiconductor form chemical bonds ● Charge flow in bonds....formation of dipole layer ● Interdiffusion ● Formation of new electronic interface states ● Both model fails to explain the barrier height dependence on metal work function Model approximations: ● Interface region ● Surface states of clean semiconductor persist and pin Fermi level
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VIGS and MIGS Deposited metals produce interface states Virtualy Induced Gap States in semiconductor are matched to Conduction band of metal Induced surface states are of mixed acceptor/donor character Fermi level near cross-over energy E B
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Metal-Organic semiconductors Band model of semiconductor: ● Neglible doping ● No intrinsic carriers ● Wide band gap ~ 2 eV ● No band bending ● Low mobility < 0.1cm2/Vs ● Dielectric constat low ~ 3
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Metal-Organic semiconductors Band model of semiconductor: ● No depletion layers ● Space Charge Limited Currents ● Image potential is important
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Metal-Organic semiconductors Hopping model ● Interfaces currently relevant only to charge transport simulations ● Monte Carlo simulations ● Gaussian Distribution of state energies An succesful attempt to understand current-voltage characteristics included inteface dipoles, image charge effects and phonons in bulk
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Conclusions ● No theory of metal-organic semiconductor interfaces, since too specific. ● Band models are based on different structure, so are fundamentally incorrect. ● The hopping models and localized states are promising theory for metal-organic semiconductor interfaces.
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