1 ME 381R Lecture 13-14 Semiconductor Devices and Thermal Issues Dr. Li Shi Department of Mechanical Engineering The University of Texas at Austin Austin,

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Presentation transcript:

1 ME 381R Lecture Semiconductor Devices and Thermal Issues Dr. Li Shi Department of Mechanical Engineering The University of Texas at Austin Austin, TX Reading: & Ch. 7 in Tien et al.

2 p-n Junction w/o Bias Depletion Region

3 Biased p-n Junction

4 Metal-Oxide-Semiconductor (MOS) Capacitor  : Electron Affinity  Work Function Energy Band Diagram before making contact n-type

5 MOS Capacitor W/O Bias (Special Case:  M =  S ) Energy Band Diagram after making contact

6 Accumulation and Depletion of Majority Carriers VGVG ViVi eV G VSVS Block Charge Diagram Very thin

7 Inversion Layer: C majority carrier >C minority carrier

8 Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET)

9 Ideal MOSFET V G >0

10 Pinch-Off & IV

11 Thermal Circuit Particle transport theory Fourier ’ s law of heat conduction

12 Joule Heating in High-Field Devices Localized heat generation near the pinch-off point

13 X-Y-Z Actuator Thermometry of Nanoelectronics Sample Temperature Sensor Laser Atomic Force Microscope (AFM) + Thermal Probe Cantilever Deflection Sensing Thermal X T Topographic X Z Scanning Thermal Microscope:

14 Microfabricated Probes Pt-Cr Junction Shi, Kwon, Miner, Majumdar, J. MicroElectroMechanical Sys., 10, p. 370 (2001) 10  m Pt Line Cr Line Tip Laser Reflector SiN x Cantilever

15 Self Heating Effect on I-V

16 Optical Phonon Emission at High Field

17 Heat Transfer Path

18 Governing Equations for Electro-Thermal Simulation of Devices

19 Example

20 Computation Scheme

21 Results

22 Electric Field

23 Electron Temperature

24 Phonon Temperature