Alliance Memory Inc. 2014

Worldwide HQ in San Carlos California, USA Sales offices in 7 countries Warehouses in 3 countries – California USA, Taiwan & Shanghai, China Over 75 International Distributor Sales Offices Over 55.6 million parts shipped worldwide Over 300 products on offer

Alliance Memory Products

Fast Asynchronous SRAMs Low Power Asynchronous SRAMs ZMD Low Power Asynchronous SRAMs Synchronous SRAMs Synchronous DRAMs (SDRs) DDR1, DDR2, DDR3 & Mobile DDR1 DRAMs Alliance Memory Product Line

Mobile TechnologyIndustrialMedical Consumer/Gaming Automotive Telecom/Networking Alliance Memory Markets

ABB Delta Tau GE Honeywell Hunter Engineering Maxim Rockwell Siemens Philips Medical Respironics Mindray Delphi Medical Systems Massimo Cardinal Health C.M.T. Medical Olympus GE Medical Nova Biomedical Advanced Medical Instruments Polycom IPC Tellabs Patton Avocent Kofax IntraRom IGT Futurlogic Honeywell Cantaloupe Systems Crestron Altek Mettler Harman Music Group Ingersol Rand Dolby Wincor SmartDTV Veeder Root Consumer/ Gaming Automotive Industrial Telecom/ Networking Medical Bosch Delphi Beckhoff Automation Representative Customers

Wafer FabTestAssembly Alliance Memory ships all material out of warehouses in the USA, Taiwan or Shanghai World-Class Manufacturing Partners

World-Class Distributor Partners

Published Article in Electronics Specifier Design Magazine by David Bagby CEO Alliance Memory

Alliance Memory Financials

5 Years Shipped Sales Revenues

Over 55.6 million parts shipped worldwide Buffer stock programs Quick sample turnaround – same day deliveries Alliance Memory % Sales Revenue per Region Americas Total35% APAC Total32% Europe Total32% Japan Total1%

13 Product Roadmap

 All devices are in production  64K New die rev in full production AS7C164A-15JCN  Variety of package options: SOJ/TSOP I & TSOP II/DIP/BGA  I-temp range devices fully screened at -40°C to +85°C  16M Available Now! (1M x 16) & 2M x8 - 10ns industrial temp - BGA (48-ball) TSOP II 8Kx8 15 ns 512Kx8 8 – 20 ns 256Kx16 8 – 20 ns 32Kx8 12 – 20 ns 32Kx8 10 – 20 ns 32Kx16 10 – 20 ns 32Kx16 12 – 20 ns 512Kx8 12 – 20 ns 256Kx16 12 – 20 ns 128Kx8 10 – 20 ns 64Kx16 10 – 20 ns 128Kx8 10 – 20 ns 64Kx16 10 – 20 ns 5 Volt 3.3 Volt 64K256K 512K 1M4M 256Kx8 10 – 20 ns 128Kx16 10 – 20 ns 2M 512Kx16 10 ns 1Mx8 10ns 16M New! 1Mx16 2M x 8 10 ns 8M8M Fast Asynchronous SRAM Availa ble Now!

256K 4M 64K Density 0.18  Process 1M 0.18  0.35  0.18  2M In Production M 0.18  Fast Asynchronous SRAM 512K 0.18  In production 16M  16M Now available 0.18   16M – datasheet & Samples available now! Sample In production

 All devices are in production  Variety of package options: sTSOP/TSOPI/TSOPII/TFBGA/SOP/PDIP  I-temp range devices fully screened at -40°C to +85°C  32M Now available! (2M x 16) – 48pin TSOP I  Datasheet available now! Production Q Kx8 70 ns 512Kx8 55ns 256Kx16 55 ns 32Kx8 55 ns 128Kx8 55 ns 64Kx16 55 ns 256Kx8 55 ns 128Kx16 55 ns Wide 2.7 – 5 Volt 8Kx8 55 ns 1024Kx8 55ns 512Kx16 55 ns 8M 16M 1024Kx16 55/70ns 2M 4M 1M 4.5 – 5.5V Volt 64K 256K 32Kx8 70 ns ZMD 8Kx8 35/55/70 ns ZMD 32Kx8 35/55/70 ns 32M 2M x16 55ns Now availabl e! Low Power SRAM

 64K LPSRAM - Organization – x8 - Package – 28pin SOP, 28pin DIP - Speed – 35, 55, 70ns - Temperatures: Commercial C, Industrial -45 – 85 C, Automotive -45 – 125 C  256K LPSRAM -Organization - x8 -Package- 28pin SOP, 28pin DIP -Speed – 35, 55, 70ns -Temperatures: Commercial C, Industrial -45 – 85 C, Automotive -45 – 125 C ZMD SRAM

4M 64K In production 0.35  Process 1M 0.15  0.35  0.15   256K M 0.15  16M 0.15  In Production Low Power SRAM Density 2M 0.15  Production Q M 0.15  Sample  32M Now available! In production

1M x MHz 512K x MHz 3.3 Volt 9M 18M 4M 2.5 Volt  All devices are in production  Various speed options  Package options: 100 TQFP  I-temp range devices fully screened at -40°C to +85°C 256Kx18 7.5ns/150Mhz/166Mhz 128Kx36 7.5ns/150Mhz/166Mhz 512Kx18 7.5ns/150Mhz 256Kx36 7.5ns/150Mhz Synchronous SRAM

4M In production Process 0.18  In production M 0.18  18M Production Synchronous SRAM Density

21  All devices are in production  64M, 128M & 256M  Package options: 54pin TSOP II, 54 ball FBGA  Temp Range: Commercial, Industrial, Automotive  512M  Package options: 54pin TSOP II,  Temp Range: Commercial, Industrial – New A die  16M Package options: 50pin TSOP II, Temp Range: Commercial only 3.3 Volt AS4C4M16S- 7TCN/BCN 4M x 16 7ns AS4C8M16S- 7TCN/BCN 8M x 16 7ns AS4C16M16S -7TCN/BCN 16M x 16 7ns AS4C4M16S- 6TIN/6BIN 4M x 16 6ns AS4C8M16S- 6TIN/6BIN 8M x 16 6ns AS4C16M16S- 6TIN/6BIN 16M x 16 6ns AS4C1M16S- 7TCN 1M x 16 7ns AS4C16M16S -6TAN 16M x 16 6ns AS4C8M16S- 6TAN 8M x 16 6ns AS4C4M16S- 6TAN 4M x 16 6ns AS4C32M16SA- 7TCN 32M x 16 7ns AS4C32M16SA- 7TIN 32M x 16 7ns 128M256M64M512M16M Synchronous DRAM (SDR) x16

In full production – x16 63nm technology 16M Density 63nm Process 256M 70nm 128M In full production – x 16 70nm technology Samples Synchronous DRAM x 16 70nm 64M In full production – x 16 70nm technology Production 512M** 70nm In full production March 2013 – x 16 70nm technology Jan **die shrink ‘A’ - awaiting details on process New ‘A’ die Feb14

 64M, and 128M  Package options: 86pin TSOP II, 90ball FBGA  Temp Range: Commercial and industrial temp  256M  Package options: 90ball FBGA only  Temp Range: Commercial and industrial temp 3.3 Volt 128M256M64M AS4C2M32S- 5,6,7TCN/7BCN 6TIN/6BIN 2M x 32 5,6,7ns AS4C4M32S- 6,7TCN/7BCN 6TIN/6BIN 4M x 32 6,7ns AS4C8M32S- 7BCN 6BIN 8M x 32 6,7ns Synchronous DRAM (SDR) x32

64M Density 63nm BGA Process 70nm BGA 256M Samples Synchronous DRAM x M Production In full production Feb 2013 – 2M x 32 – 63nm technology Jan13 In full production Feb 2013 – 4M x 32 – 63nm technology Jan13 In full production Feb 2013 – 8M x 32 – 70nm technology nm TSOP 63nm BGA 90nm TSOP

 64M, 128M, 256M and 512M  Package options: 66pin TSOP II  Temp Range: Commercial, Industrial 2.5 Volt 128M256M 64M AS4C4M16D1-5TCN 4M x 16 5ns AS4C8M16D1-5TCN 8M x 16 5ns AS4C16M16D1-5TCN 16M x 16 5ns AS4C4M16D1-5TIN 4M x 16 5ns AS4C8M16D1-5TIN 8M x 16 5ns AS4C16M16D1-5TIN 16M x 16 5ns Synchronous DDR1 AS4C32M16D1-5TCN 32M x 16 5ns AS4C16M16D1-5TIN 32M x 16 5ns 512M

64M Density 70nm Process 512M 63nm 256M In full production by February 2013 – 70nm technology Samples DDR1 68nm 128M Production Now! In full production by June 2013 – 63nm technology In full production by February 2013 In full production by March 2013 – 45nm technology Q1 Q2Q3Q4

 512M and 1Gb  Package options: 512M – (32M x16) 84ball FBGA 1G (64M x16) 84ball FBGA 1G (128Mx8) 60ball FBGA  Temp Range: Commercial, Industrial 1.8 Volt 1Gb 512M AS4C32M16D2- 25BCN 32M x 16 25ns AS4C64M16D2- 25BCN 64M x 16 25ns AS4C128M8D2- 25BCN 128M x 8 25ns Synchronous DDR2 AS4C32M16D2- 25BIN 32M x 16 25ns AS4C64M16D2- 25BIN 64M x 16 25ns AS4C128M8D2- 25BIN 128M x 8 25ns

Density Process 45nm 50nm 1GB (128x8) Samples DDR2 1GB (64x16) Production Now! In full production – 50nm technology In full production – 45nm technology Q1 Q2Q3Q4 512M 68nm In full production – 68nm technology Now!

 1Gb, 2Gb and 4Gb  Package options:  1G (128Mx8) 78ball FBGA / 1G (64M x 16) 96ball FBGA  2G (128Mx16) 96ball FBGA /2G (256Mx8) 78ball FBGA  4G (256Mx16) 96ball FBGA /4G (512Mx8) 78ball FBGA  Temp Range: Commercial, Industrial and Automotive (AEC-Q100) 1.5 Volt 1Gb 2Gb 1G AS4C128M8D3- 12BCN 128M x 8 12ns Synchronous DDR3 AS4C128M8D3- 12BIN 128M x 8 12ns AS4C128M8D3- 12BAN 128M x 8 12ns AS4C64M16D3- 12BCN 64M x 16 12ns AS4C64M16D3- 12BIN 64M x 16 12ns AS4C64M16D3- 12BAN 64M x 16 12ns AS4C128M16D3- 12BCN 128M x 16 12ns AS4C128M16D3- 12BIN 128M x 16 12ns AS4C256M8D3- 12BCN 256M x 8 12ns AS4C256M8D3- 12BIN 256M x 8 12ns 4Gb AS4C256M16D3- 12BCN 256M x 16 12ns AS4C256M16D3- 12BIN 256M x 16 12ns AS4C512M8D3- 12BCN 512M x 8 12ns AS4C512M8D3- 12BIN 512M x 8 12ns

Density Process 30nm 1GB (64Mx16) Samples DDR3 1GB (128Mx8) Production In full production – 30nm technology Feb H2014 2H 30nm In full production – 30nm technology Feb 4GB (256Mx16) 2GB (128Mx16) 2GB (256Mx8) 30nm In full production – 30nm technology Feb In full production – 30nm technology Feb 4GB (512Mx8) 30nm In full production – 30nm technology Feb

 256M and 512M  Package options: 60ball FPBGA  Temp Range: Commercial temp only currently 1.8 Volt 256M AS4C16M16MD1-6BCN 16M x 16 6ns Mobile DDR AS4C32M16MD1-6BCN 32M x 16 5ns 512M

256M Density 63nm Process 63nm In full production by February 2014– 63nm technology Samples Mobile DDR 512M Production In full production by March 2014 – 63nm technology Q1 Q2Q3Q4

Alliance Memory New Products Q1-2014/Q Gb DDR2 & 1Gb Mobile DDR

Alliance Memory New Products Q1-2014/Q Gb, 2Gb and 4Gb low voltage 1.35V DDR3 NEW DDR 3 releases coming Density OrganizationVCCSpeedPackageAlliance Part Number 1G64M x V800MHz96-ball FBGA AS4C64M16D3L-12BCN 2G128M x V800MHz96-ball FBGA AS4C128M16D3L-12BCN 4G256M x V800MHz96-ball FBGA AS4C256M16D3L-12BCN

Quality & Reliability

 ISO 9001 certified until 2015  Document control system  Incoming QA and monitoring in place  Reliability program in place  State-of-the-art test equipment and techniques  Compliance to JEDEC and EIAJ standards  REACH  ROHS2 compliant  Automotive AECQ-100 compliant Alliance Quality and Reliability

Published Article in Material Handling & Logistics Magazine by Richard Ward – QA & Logistics Director

Company Information Datasheets Cross Reference Guides Weekly stock inventory report ROHS/REACH Compliancy information Package details MPQ’s Testimonials Worldwide Distributor information available on the web at Alliance Memory Website

Why Engage with Alliance Memory? Fast Information response times Buffer stock programs Quick sample turnaround Inventory held in the U.S. Shanghai & Taiwan Multiple manufacturing sites Great customer service and support All parts go through additional ‘Burn In’ testing Management has strong Memory background COMMITMENT TO LEGACY Memory!